Fundamentals of power semiconductor devices
著者
書誌事項
Fundamentals of power semiconductor devices
Springer, c2008
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注記
Includes bibliographical references and index.
内容説明・目次
内容説明
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.
目次
Introduction.- Material properties and transport physics.- Breakdown voltage.- Schottky rectifiers.- P-i-N rectifiers.- Power MOSFETs.- Bipolar junction transistors.- Thyristors.- Insulated gate bipolar transistors.- Synopsis.
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