Advances in GaN, GaAs, SiC and related alloys on silicon substrates : symposium held March 24-28, 2008, San Francisco, U.S.A
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書誌事項
Advances in GaN, GaAs, SiC and related alloys on silicon substrates : symposium held March 24-28, 2008, San Francisco, U.S.A
（Materials Research Society symposium proceedings, v. 1068）
Materials Research Society, c2008
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注記
"Symposium C, 'Advances in GaN, GaAs, SiC and related alloys on silicon substrates' was held March 24-28 at the 2008 MRS Spring Meeting in San Francisco, California."--Pref.
内容説明・目次
内容説明
To meet increasingly challenging and complex system requirements, as well as to stay cost effective, it is not enough to use one single semiconductor materials system. Major efforts have, therefore, been made to combine the low cost and well established Si-based CMOS processing attributes with the superior performance attributes of compound semiconductors (CS). Such a combination will enable performance superior to that achievable with either CS and CMOS alone, with CMOS affordability. The strong and increasing interest in GaN, GaAs, SiC and related alloys on silicon substrates indicates the worldwide importance of these materials and devices. This book represents the latest technical advancements and information on III-V materials and devices on silicon substrates from universities, national laboratories and industries worldwide. Topics include: GaN-based electronic devices and sensors on silicon; GaN-based optical devices on silicon; GaN and related alloys on silicon growth and integration techniques; conventional III-V materials and devices on silicon; and silicon and other materials on silicon.
目次
- Preface
- Acknowledgments
- Part I. GaN Based Electronic Device and Sensors on Silicon
- Part II. GaN Based Optical Devices on Silicon
- Part III. GaN and Related Alloys on Silicon Growth and Integration Techniques
- Part IV. Conventional III-V Materials and Devices on Silicon
- Part V. Silicon and Other Materials on Silicon
- Author index
- Subject index.
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