Silicon Carbide 2008--materials, processing and devices : symposium held March 25-27, 2008, San Francisco, California, U.S.A.
著者
書誌事項
Silicon Carbide 2008--materials, processing and devices : symposium held March 25-27, 2008, San Francisco, California, U.S.A.
（Materials Research Society symposium proceedings, v. 1069）
Materials Research Society, c2008
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注記
Includes bibliographical references and indexes
"This voluime contains 37 papers presented at Symposium D, 'Silicon carbide--materials, processing and devices', held March 25-27 at the 2008 MRS Spring Meeting in San Francisco, California."--Pref.
内容説明・目次
内容説明
Silicon carbide (SiC) is a robust semiconductor material being actively developed for high-power and high-temperature applications, especially in the field of power electronics and sensors for harsh environments. This book, the fifth in a continuing series, focuses on SiC growth, defects, and devices. New developments in the growth of bulk SiC single-crystal materials, advances in the epitaxial growth of SiC, and progress in the characterization of materials properties and defects in SiC are featured. The volume also highlights the development of devices manufactured on this wide-bandgap semiconductor including: innovative device designs; characterization of device and materials properties; and improvements in wide-bandgap processing technology.
目次
- Part I. Bulk Material and Characterization
- Part II. Epitaxial Material and Characterization
- Part III. Device Processing and Characterization
- Author index
- Subject index.
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