Doping engineering for front-end processing : symposium held March 25-27, 2008, San Francisco, California, U.S.A.
著者
書誌事項
Doping engineering for front-end processing : symposium held March 25-27, 2008, San Francisco, California, U.S.A.
（Materials Research Society symposium proceedings, v. 1070）
Materials Research Society, c2008
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注記
"This volume contains papers presented at Symposium E, 'Doping engineering for front-end processing' held March 25-27 at the 2008 MRS Spring Meeting in San Francisco, California."--Pref.
Includes bibliographical references and indexes
内容説明・目次
内容説明
Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed.
目次
- Preface
- Part I. Ultra Shallow Junctions I
- Part II. Shallow Junction Contacting
- Part III. Poster Session
- Part IV. Ultra Shallow Junctions II
- Part V. Solid Phase Epitaxial Regrowth
- Part VI. Modeling and Simulation
- Author index
- Subject index.
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