Properties of semiconductor alloys : group-IV, III-V and II-VI semiconductors
Author(s)
Bibliographic Information
Properties of semiconductor alloys : group-IV, III-V and II-VI semiconductors
(Wiley series in materials for electronic and optoelectronic applications)
Wiley, c2009
Available at 16 libraries
  Aomori
  Iwate
  Miyagi
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  Fukushima
  Ibaraki
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  Tokyo
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  Toyama
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  Fukui
  Yamanashi
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  Kyoto
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  Wakayama
  Tottori
  Shimane
  Okayama
  Hiroshima
  Yamaguchi
  Tokushima
  Kagawa
  Ehime
  Kochi
  Fukuoka
  Saga
  Nagasaki
  Kumamoto
  Oita
  Miyazaki
  Kagoshima
  Okinawa
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  United Kingdom
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Note
Includes bibliographical references and index
Description and Table of Contents
Description
The main purpose of this book is to provide a comprehensive treatment of the materials aspects of group-IV, III V and II VI semiconductor alloys used in various electronic and optoelectronic devices. The topics covered in this book include the structural, thermal, mechanical, lattice vibronic, electronic, optical and carrier transport properties of such semiconductor alloys. The book reviews not only commonly known alloys (SiGe, AlGaAs, GaInPAs, and ZnCdTe) but also new alloys, such as dilute-carbon alloys (CSiGe, CSiSn, etc.), III N alloys, dilute-nitride alloys (GaNAs and GaInNAs) and Mg- or Be-based II VI semiconductor alloys. Finally there is an extensive bibliography included for those who wish to find additional information as well as tabulated values and graphical information on the properties of semiconductor alloys.
Table of Contents
Series Preface. Preface.
Abbreviations and Acronyms.
Introductory Remarks.
A.1 An Alloy and a Compound.
A.2 Grimm-Sommerfeld Rule.
A.3 An Interpolation Scheme.
References.
1 Structural Properties.
1.1 Ionicity.
1.2 Elemental Isotopic Abundance and Molecular Weight.
1.3 Crystal Structure.
1.4 Lattice Constant and Related Parameters.
1.5 Coherent Epitaxy and Strain Problem.
1.6 Structural Phase Transition.
1.7 Cleavage Plane.
References.
2 Thermal Properties.
2.1 Melting Point and Related Parameters.
2.2 Specific Heat.
2.3 Debye Temperature.
2.4 Thermal Expansion Coefficient.
2.5 Thermal Conductivity and Diffusivity.
References.
3 Elastic Properties.
3.1 Elastic Constant.
3.2 Third-order Elastic Constant.
3.3 Young's Modulus, Poisson's Ratio and Similar Properties.
3.4 Microhardness.
3.5 Sound Velocity.
References.
4 Lattice Dynamic Properties.
4.1 Phonon Dispersion Relationships.
4.2 Phonon Frequency.
4.3 Mode Gruneisen Parameter.
5 Collective Effects and Some Response Characteristics.
5.1 Piezoelectric Constant.
5.2 Froehlich Coupling Constant.
References.
6 Energy-band Structure: Energy-band Gaps.
6.1 Introductory Remarks.
6.2 Group-IV Semiconductor Alloy.
6.3 III-V Semiconductor Ternary Alloy.
6.4 III-V Semiconductor Quaternary Alloy.
6.5 II-VI Semiconductor Alloy.
References.
7 Energy-band Structure: Effective Masses.
7.1 Introductory Remarks.
7.2 Group-IV Semiconductor Alloy.
7.3 III-V Semiconductor Ternary Alloy.
7.4 III-V Semiconductor Quaternary Alloy.
7.5 II-VI Semiconductor Alloy.
7.6 Concluding Remarks.
References.
8 Deformation Potentials.
8.1 Intravalley Deformation Potential: I Point.
8.2 Intravalley Deformation Potential: High-symmetry Points.
8.3 Intervalley Deformation Potential.
References.
9 Heterojunction Band Offsets and Schottky Barrier Height.
9.1 Heterojunction Band Offsets.
9.2 Schottky Barrier Height.
References.
10 Optical Properties.
10.1 Introductory Remarks.
10.2 Group-IV Semiconductor Alloy.
10.3 III-V Semiconductor Ternary Alloy.
10.4 III-V Semiconductor Quaternary Alloy.
10.5 II-VI Semiconductor Alloy.
References.
11 Elasto-optic, Electro-optic and Nonlinear Optical Properties.
11.1 Elasto-optic Effect.
11.2 Linear Electro-optic Constant.
11.3 Quadratic Electro-optic Constant.
11.4 Franz-Keldysh Effect.
11.5 Nonlinear Optical Constant.
References.
12 Carrier Transport Properties.
12.1 Introductory Remarks.
12.2 Low-field Mobility.
12.3 High-field Transport.
12.4 Minority-carrier Transport.
12.5 Impact Ionization Coefficient.
References.
Index.
by "Nielsen BookData"