Strained silicon heterostructures : materials and devices
著者
書誌事項
Strained silicon heterostructures : materials and devices
（IEE circuits, devices and systems series, 12）
Institution of Electrical Engineers, c2001
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注記
Includes bibliographical references and index
内容説明・目次
内容説明
This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices in siliconheterostructure material systems. In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques has given rise to a new area of research of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors, but also for other fascinating novel quantum devices. This book provides an excellent introduction and valuable references for postgraduate students and research scientists.
目次
Chapter 1: Introduction
Chapter 2: Strained Layer Epitaxy
Chapter 3: Electronic Properties of Alloy Layers
Chapter 4: Gate Dielectrics on Strained Layers
Chapter 5: SiGe Heterojunction Bipolar Transistors
Chapter 6: Heterostructure Field Effect Transistors
Chapter 7: BICFET, RTD and Other Devices
Chapter 8: MODFETs
Chapter 9: Contact Metallization on Strained Layers
Chapter 10: Si/SiGe Optoelectronics
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