Power microelectronics : device and process technologies

Author(s)

    • Liang, Yung C.
    • Samudra, Ganesh S.

Bibliographic Information

Power microelectronics : device and process technologies

Yung C. Liang, Ganesh S. Samudra

World Scientific, c2009

Available at  / 3 libraries

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Note

Includes bibliographical references and index

Description and Table of Contents

Description

This descriptive textbook provides an in-depth look at the theories and process technologies necessary for understanding modern power semiconductor devices, i.e. from the fundamentals of junction electrostatics, p-n junction devices, unipolar MOSFET, bipolar IGBT, and superjunction devices to their associated silicon wafer process technology. State-of-the-art devices based on current research and development are included in the book to widen the scope for future device generation. The detailed structure and performance merit of the devices are also presented, together with laboratory measurements and SEM photographs. Examples used in the book are based mainly on actual fabricated devices, with the process steps described in clear detail. This book is useful for senior-year undergraduate courses on power semiconductor or power electronic devices, as well as for graduate-level courses, especially those focusing on advanced device development and design aspects. Device designers and researchers will also find this book a good reference in their work.

Table of Contents

  • Introduction
  • Carrier Physics and Junction Electrostatics
  • Bipolar Junction Diode
  • Power Metal-Oxide-Semiconductor Field-Effect Transistor
  • Insulated-Gate Bipolar Transistor
  • Superjunction Structures
  • Fabrication and Modeling of Power Devices
  • Practical Case Studies in Power Devices.

by "Nielsen BookData"

Details

  • NCID
    BB00833721
  • ISBN
    • 9789812791009
  • Country Code
    us
  • Title Language Code
    eng
  • Text Language Code
    eng
  • Place of Publication
    Hackensack, NJ
  • Pages/Volumes
    xv, 413 p.
  • Size
    24 cm
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