Bibliographic Information

Power devices and sensors

edited by Peter Friedrichs ... [et al.]

(Silicon carbide / edited by Peter Friedrichs ... [et al.], 2)

Wiley-VCH, c2010

Available at  / 15 libraries

Search this Book/Journal

Note

Includes index

Description and Table of Contents

Description

Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. This volume is devoted to high power devices products and their challenges in industrial application. Readers will benefit from reports on development and reliability aspects of Schottky barrier diodes, advantages of SiC power MOSFETs, or SiC sensors. The authors discuss MEMS and NEMS as SiC-based electronics for automotive industry as well as SiC-based circuit elements for high temperature applications, and the application of transistors in PV-inverters. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development. Among the former are CREE Inc. and Fraunhofer ISE, while the industry is represented by Toshiba, Nissan, Infineon, NASA, Naval Research Lab, and Rensselaer Polytechnic Institute, to name but a few.

Table of Contents

1) Present Status and Future Prospects for Electronics in EVs/HEVs and Expectations for Wide Bandgap Semiconductor Devices 2) Silicon Carbide power devices - Status and upcoming challenges with a special attention to industrial application 3) Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts 4) Reliability aspects of SiC Schottky Diodes 5) Design, process, and performance of all-epitaxial normally-off SiC JFETs 6) Extreme Temperature SiC Integrated Circuit Technology 7) 1200 V SiC Vertical-channel-JFET based cascode switches 8) Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors 9) High electron mobility ahieved in n-channel 4H-SiC MOSFETs oxidized in the presence of nitrogen 10) 4H-SiC MISFETs with Nitrogen-containing Insulators 11) SiC Inversion Mobility 12) Development of SiC diodes, power MOSFETs and intellegent Power Modules 13) Reliability issues of 4H-SiC power MOSFETs toward high junction temperature operation 14) Application of SiC-Transistors in Photovoltaic-Inverters 15) Design and Technology Considerations for SiC Bipolar Devices: BJTs, IGBTs,and GTOs 16) Suppressed surface recombination structure and surface passivation for improving current gain of 4H-SiC BJTs 17) SiC avalanche photodiodes and photomultipliers for ultraviolet and solar-blind light detection

by "Nielsen BookData"

Related Books: 1-1 of 1

  • Silicon carbide

    edited by Peter Friedrichs ... [et al.]

    Wiley-VCH c2010

Details

  • NCID
    BB00952028
  • ISBN
    • 9783527409976
  • Country Code
    gw
  • Title Language Code
    eng
  • Text Language Code
    eng
  • Place of Publication
    Weinheim
  • Pages/Volumes
    xx, 500 p.
  • Size
    25 cm
  • Parent Bibliography ID
Page Top