Integrated silicon device technology

書誌事項

Integrated silicon device technology

[by Research Triangle Institute]

Koken book, [1963]-

  • v.1
  • v.2
  • v.4
  • v.6
  • v.7 no.1
  • v.7 no.2
  • v.8
  • v.9
  • v.10
  • v.11 Bd.1
  • v.11 Bd.2

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注記

v.1: "ASD-TDR-63-316, Volume I, June 1963"

v.2: "ASD-TDR-63-316, Volume II, October 1963"

v.4: "ASD-TDR-63-316, Volume IV, February 1964"

v.6: "ASD-TDR-63-316, Volume VI, March 1965"

v.7: "ASD-TDR-63-316, Volume VII, June 1965"

v.8: "ASD-TDR-63-316, Volume VIII"

v.9: "ASD-TDR-63-316, Volume VIIII, August 1965"

v.10: "ASD-TDR-63-316, Volume X, November 1965"

v.11: "ASD-TDR-63-316, Volume XI"

Originally published: Ohio : Wright-Patterson Air Force Base, 1963-

収録内容

  • v.1: Resistance
  • v.2: Capacitance
  • v.4: Diffusion
  • v.6: Unipolar transistors
  • v.7: Oxidation
  • v.8: Diodes
  • v.9: Epitaxy
  • v.10: Chemical/matallurgical properties of sillicon
  • v.11: Bipolar transistors

詳細情報

  • NII書誌ID(NCID)
    BB01218646
  • 出版国コード
    ja
  • タイトル言語コード
    eng
  • 本文言語コード
    eng
  • 出版地
    [S.l.]
  • ページ数/冊数
    v.
  • 大きさ
    27 cm
  • 件名
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