CMOS gate-stack scaling--materials, interfaces and reliability implications : symposium held April 14-16, 2009, San Francisco, California, U.S.A.
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Bibliographic Information
CMOS gate-stack scaling--materials, interfaces and reliability implications : symposium held April 14-16, 2009, San Francisco, California, U.S.A.
（Materials Research Society symposium proceedings, v. 1155）
Materials Research Society, c2009
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Other editors: Bill Taylor, H. Rusty Harris, Jeffery W. Butterbaugh, Willy Rachmady
Includes bibliographical references and indexes
"..., 'CMOS gate-stack scaling--materials, interfaces and reliability implications,' held April 14-16 at the 2009 MRS Spring Meeting in San Francisco, California."--Pref.
Description and Table of Contents
Description
To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces which comprise the gate stack. Topics include: advanced Si-based gate stacks; and alternate channel materials.
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