Materials and physics for nonvolatile memories : symposium held April 14-17, 2009, San Francisco, California, U.S.A.
Author(s)
Bibliographic Information
Materials and physics for nonvolatile memories : symposium held April 14-17, 2009, San Francisco, California, U.S.A.
（Materials Research Society symposium proceedings, v. 1160）
Materials Research Society, c2009
Available at 3 libraries
Note
Other editors: Rainer Waser, Tingkai Li, Caroline Bonafos
"..., 'Materials and physics for nonvolatile memories," held April 14-17 at the 2009 MRS Spring Meeting in San Francisco, California, ..."--Pref.
Includes bibliographical references and indexes
Description and Table of Contents
Description
This third book in a series on nonvolatile memories builds on fundamental materials properties, materials integration, demonstration, and industrial devices gathered in those previous. A strong and increasing interest in nonvolatile memories, both domestic and international, indicates the worldwide importance of these materials and memory devices. The book features research on advanced flash memories, including nanoparticle floating gate FETs, MRAM, FeRAM, ReRAM and phase change RAMs, as well as memories using polymer materials. Papers from a joint session with Symposium FF, Novel Materials and Devices for Spintronics, are also included.
Table of Contents
- Part I. Advanced Flash I
- Part II. Charge Trap Memory I
- Part III. Magnetic Resistive RAM
- Part IV. Poster Session: Advanced Flash II
- Part V. Poster Session: Charge Trap II and MRAM
- Part VI. Ferroelectric Memory
- Part VII. Resistive Switching RAM I
- Part VIII. Resistive Switching RAM II
- Part IX. Poster Session: Resistive Switching RAM III
- Part X. Poster Session: Phase Change RAM I
- Part XI. Phase Change RAM II
- Part XII. Phase Change RAM III
- Author index
- Subject index.
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