Bibliographic Information

Technology of gallium nitride crystal growth

Dirk Ehrentraut, Elke Meissner, Michal Bockowski

(Springer series in materials science, 133)

Springer, c2010

  • : softcover

Available at  / 9 libraries

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Description and Table of Contents

Description

Semiconductor materials have been studied intensively since the birth of silicon technology more than 50 years ago. The ability to physically and chemically t- lor their properties with precision is the key factor responsible for the electronic revolution in our society over the past few decades. Semiconductor material s- tems (like silicon and GaAs-related materials) have now matured and found well established applications in electronics, optoelectronics, and several other ?elds. Other materials such as III-Nitrides were developed later, in response to needs that the above mentioned semiconductors were unable to ful?ll. The properties of I- nitrides (AlN, GaN InN, and related alloy systems) make them an excellent choice for ef?cient light emitters in the visible as well as the UV region, UV detectors, and for a variety of electronic device such as high frequency unipolar power devices. There was a major upsurgein the research of the GaN material system around1970.

Table of Contents

Market for Bulk GaN Crystals.- Development of the Bulk GaN Substrate Market.- Vapor Phase Growth Technology.- Hydride Vapor Phase Epitaxy of GaN.- Growth of Bulk GaN Crystals by HVPE on Single Crystalline GaN Seeds.- Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy Using Void-Assisted Separation Technology.- Nonpolar and Semipolar GaN Growth by HVPE.- High Growth Rate MOVPE.- Solution Growth Technology.- Ammonothermal Growth of GaN Under Ammono-Basic Conditions.- A Pathway Toward Bulk Growth of GaN by the Ammonothermal Method.- Acidic Ammonothermal Growth Technology for GaN.- Flux Growth Technology.- High Pressure Solution Growth of Gallium Nitride.- A Brief Review on the Na-Flux Method Toward Growth of Large-Size GaN Crystal.- Low Pressure Solution Growth of Gallium Nitride.- Characterization of GaN Crystals.- Optical Properties of GaN Substrates.- Point Defects and Impurities in Bulk GaN Studied by Positron Annihilation Spectroscopy.

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Details

  • NCID
    BB02651179
  • ISBN
    • 9783642048289
    • 9783642263897
  • LCCN
    2010920285
  • Country Code
    gw
  • Title Language Code
    eng
  • Text Language Code
    eng
  • Place of Publication
    Berlin
  • Pages/Volumes
    xxi, 326 p.
  • Size
    24 cm
  • Classification
  • Parent Bibliography ID
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