New data and updates for I-VII, III-V, III-VI and IV-VI compounds
著者
書誌事項
New data and updates for I-VII, III-V, III-VI and IV-VI compounds
（Landolt-Börnstein Zahlenwerte und Funktionen aus Naturwissenschaften und Technik, Neue Serie / Gesamtherausgabe, K.-H. Hellwege, group 3 . Condensed matter ; v. 44 . Semiconductors ; subv. A）
Springer, c2008
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注記
ISSN: Condensed matter
内容説明・目次
内容説明
The Landolt-Boernstein subvolumes III/44A and III/44B update the existing 8 volumes III/41 about Semiconductors and contain new Data and Updates for I-VII, III-V, III-VI, IV, VI and II-VI Compounds. The text, tables figures and references are provided in self-contained document files, each one dedicated to a substance and property. The first subvolume III/44A contains a "Systematics of Semiconductor Properties", which should help the non-specialist user to understand the meaning of the material parameters. Hyperlinked lists of substances and properties lead directly to the documents and make the electronic version an easy-to-use source of semiconductor data. In the new updates III/44A and III/44B, links to existing material in III/41 or to related documents for a specific substance are also included.
目次
Systematics of Semiconductor Data.- Index of Substances, List of Symbols and Abbreviations, Conversion factors.- AgBr: heat of sublimation.- AgBr: lattice constants.- AgBr: compressibility, bulk modulus.- AgBr: Debye-Waller factor.- AgCl: heat of sublimation.- AgCl: lattice constants.- AgCl: compressibility, bulk modulus.- AgCl: Debye-Waller factor.- AgF: heat of sublimation.- AgF: lattice constants.- AgI, beta modification: Debye-Waller factor, mean square relative displacements.- AgI: heat of sublimation.- AgI: lattice constants.- AgI: phase transitions, p-T phase diagram.- AgI: compressibility, bulk modulus.- AgI: Debye-Waller factor.- Cu Cl1-x Br x : phonon wavenumbers.- Cu Cl1-x Br x : electron mobility, drift velocity.- CuBr, gamma modification: exciton energies.- CuBr, gamma modification: Debye-Waller factor, mean square relative displacements.- CuBr, gamma modification: spin-orbit splittings.- CuBr: elastic moduli, mode Gruneisen parameters, effective charges.- CuBr, gamma modification: electron mobility, drift velocity.- CuBr: phase transitions, p-T phase diagram.- CuBr: lattice constants.- CuBr: bulk modulus.- CuBr, gamma modification: biexciton and trion data.- CuBr: phonon frequencies and wavenumbers, related data.- CuBr: heat of sublimation.- CuCl, gamma modification: crystal structure, space group.- CuCl, gamma modification: band structure.- CuCl, gamma modification: deformation potentials.- CuCl, gamma modification: exciton energies, Rabi energies, oscillator strength.- CuCl, gamma modification: biexciton data.- CuCl, gamma modification: trion data.- CuCl, gamma modification: electron-hole plasma.- CuCl, gamma modification: thermal expansion coefficient.- CuCl, gamma modification: phonon frequencies, phonon wavenumbers, damping constants.- CuCl, gamma modification: elastic moduli, effective charge.- CuCl, gamma modification: Debye-Waller factors, mean square displacements.- CuCl: bulk modulus.- CuCl, gamma modification: dielectric constant.- CuCl, gamma modification: conductivity, resistivity.- CuCl, gamma modification: sublimation energy.- CuCl, gamma modification: lattice constants.- CuCl, gamma modification: mode Gruneisen parameters.- CuCl, gamma modification: exciton energies.- CuCl, gamma modification: phonon wavenumbers.- CuF: heat of sublimation.- CuF: lattice constants.- CuI, gamma modification: exciton energies.- CuI: elastic moduli, mode Gruneisen parameters, effective charges.- CuI: lattice constants.- CuI: bulk modulus.- CuI: phase transitions, p-T phase diagram.- CuI, gamma modification: biexciton and trion data.- CuI: heat of sublimation.- CuI, gamma modification: electron mobility, drift velocity.- CuI, gamma modification: phonon wavenumbers.- I-VII-compounds: phases and lattice parameter, melting point.- I-VII-compounds: chemical bond.- AlAs: band structure, energies at symmetry points.- AlAs: energy gaps.- AlAs: interband transition energies.- AlAs: camel's back parameter.- AlAs: spin-orbit splittings.- AlAs: Dresselhaus spin-splitting parameter.- AlAs: effective Lande g-factors.- AlAs: effective-mass parameters.- AlAs: refractive index.- AlAs: dielectric constants.- AlAs: mobility.- Al x Ga1?x As: band structure.- Al x Ga1-x As: energy gaps.- Al x Ga1?x As: critical point energies.- Al x Ga1-x As: refractive index, absorption coefficient.- Al x Ga1-x As: mobility.- Al x Ga1?x As: impact ionization coefficients.- AlN: energy gaps.- AlN: critical point energies.- AlN: spin-orbit splittings, crystal-field splitting.- AlN: excitonic energy gaps, exciton binding energies and lifetime.- AlN: absorption, refractive index, dielectric function.- GaAs: band structure, energies at symmetry points.- GaAs: interband transition energies.- GaAs: energy gaps.- GaAs: exciton linewidth.- GaAs: spin-orbit splittings.- GaAs: Dresselhaus spin-splitting parameter.- GaAs: effective-mass parameters.- GaAs: effective Lande g-factors.- GaAs: refractive index.- GaAs: dielectric constants.- GaAs: resistivity.- GaAs: mobility, drift velocity.- GaAs: spin transport data.- GaAs: impact ionization coefficients.- GaAs: photoemission data.- GaAs: Auger recombination coefficient and lifetime.- GaAs: radiative recombination coefficient.- GaAs: bound exciton data.- GaAs: exciton fine-structure.- Ga1-x Fe x Se: magnetization, magnetic anisotropy.- Ga1-x Mn x S: magnetization.- Ga1-x Mn x Se: magnetization.- GaN, cubic modifiaction: energy gaps.- GaN, cubic modification: effective Lande g-factors.- GaN, cubic modification: dielectric function.- GaN, hexagonal modification: energy gaps.- GaN, hexagonal modification: exciton energies, pressure dependence.- GaN, hexagonal modification: exciton g-factors.- GaN, hexagonal modification: crystal-field splitting, spin-orbit splittings.- GaN, hexagonal modification: effective-mass parameters.- GaN, hexagonal modification: Hall mobility.- GaN, hexagonal modification: diffusion coefficient, diffusion length.- GaN, hexagonal modification: carrier lifetimes.- GaN, hexagonal modification: absorption coefficient, dielectric constant.- In1?x Mn x S: magnetization.- In1-x Mn x Se: magnetization, hysteresis.- InN, wurtzite modification: band structure.- InN, wurtzite modification: energy gaps.- InN, wurtzite modification: critical point energies.- InN, wurtzite modification: spin-orbit splittings, crystal field splitting.- InN, wurtzite modification: effective-mass parameters.- InN, wurtzite modification: mobility, diffusion coefficients.- InN, wurtzite modification: absorption, reflectance, and photoluminescence.- InN, cubic modification: band structure, energies at symmetry points.- InN, cubic modification: energy gaps.- InN, cubic modification: effective-mass parameters.- Pb1?x Eu x S: crystal structure.- Pb1?x Eu x S: photoemission data.- Pb1?x Eu x S: magnetization.- Pb1?x Eu x S: magnetic ion g-factor.- Pb1?x Eu x Se: lattice parameter.- Pb1?x Eu x Se: energy gaps.- Pb1?x Eu x Se: band structure parameters.- Pb1?x Eu x Se: refractive index, absorption.- Pb1?x Eu x Se: dielectric constant.- Pb1-x Eu x Se: transmission.- Pb1-x Eu x Se: photoemission data.- Pb1-x Eu x Se: sp-f exchange integrals.- Pb1-x Eu x Se: g-factor of magnetic ions.- Pb1-x Eu x Te: band structure parameters.- Pb1-x Eu x Te: energy gaps.- Pb1-x Eu x Te: Debye-Waller factor.- Pb1-x Eu x Te: phonon wavenumbers.- Pb1-x Eu x Te: resistivity.- Pb1-x Eu x Te: mobility.- Pb1?x Eu x Te: phase coherence length.- Pb1?x Eu x Te: transmission.- Pb1?x Eu x Te: Verdet constant.- Pb1?x Eu x Te: photoemission data.- Pb1?x Eu x Te: sp-f exchange integrals.- Pb1?x Eu x Te: f-f exchange integrals.- Pb1?x Eu x Te: Curie temperature.- Pb1?x Eu x Te: magnetization, magnetic specific heat.- Sn1?x Eu x Te: crystal structures.- Sn1?x Eu x Te: lattice parameter.- Sn1?x Eu x Te: resistivity.- Sn1?x Eu x Te: mobilities.- Sn1?x Eu x Te: transmission.- Sn1?x Eu x Te: exchange integrals.- Sn1?x Eu x Te: magnetization.- Sn1?x Eu x Te: g-factor of magnetic ions.- Ge1?x Mn x Te: crystal structure.- Ge1?x Mn x Te: magnetoresistance.- Ge1?x Mn x Te: transmittance.- Ge1?x Mn x Te: exchange constants.- Ge1-x Mn x Te: Curie temperature.- Ge1-x Mn x Te: lattice parameter.- Ge1-x Mn x Te: energy gaps.- Ge1-x Mn x Te: effective-mass parameters.- Pb1-x Mn x Se: energy gap.- Pb1?x Mn x Se: transmission, dielectric constants.- Pb1-x-y Sn y Mn x Te: band structure.- Pb1-x-y Sn y Mn x Te: Curie temperature.- Pb1?x Mn x Te: structural phases.- Pb1?x Mn x Te: specific heat, thermal conductivity.- Pb1?x Mn x Te: phonon frequencies.- Pb1?x Mn x Te: micro hardness.- Pb1?x Mn x Te: thermoelectric power.- Pb1?x Mn x Te: magnetoresistance.- Sn1?x Mn x Te: structural phases, crystal structures.- Sn1?x Mn x Te: photoemission data.- Sn1?x Mn x Te: phase transition, magnetic anisotropy.
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