Strain-induced effects in advanced MOSFETs
著者
書誌事項
Strain-induced effects in advanced MOSFETs
（Computational microelectronics）
Springer-Verlag, c2011
大学図書館所蔵 件 / 全1件
-
該当する所蔵館はありません
- すべての絞り込み条件を解除する
注記
Includes bibliographical references
内容説明・目次
内容説明
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.
目次
1 Introduction
2 Scaling, Power Consumption, and Mobility Enhancement Techniques
3 Strain and Stress
4 Basic Properties of the Silicon Lattice
5 Band Structure of Relaxed Silicon
6 Perturbative Methods for Band Structure Calculations in Silicon
7 Strain Effects on the Silicon Crystal Structure
8 Strain Effects on the Silicon Band Structure
9 Strain Effects on the Conduction Band of Silicon
10 Electron Subbands in Silicon in the Effective Mass Approximation
11 Electron Subbands in Thin Silicon Films
12 Demands of Transport Modeling in Advanced MOSFETs
「Nielsen BookData」 より