In situ characterization of thin film growth
著者
書誌事項
In situ characterization of thin film growth
(Woodhead publishing in materials)
Woodhead Publishing, 2011
大学図書館所蔵 全3件
  青森
  岩手
  宮城
  秋田
  山形
  福島
  茨城
  栃木
  群馬
  埼玉
  千葉
  東京
  神奈川
  新潟
  富山
  石川
  福井
  山梨
  長野
  岐阜
  静岡
  愛知
  三重
  滋賀
  京都
  大阪
  兵庫
  奈良
  和歌山
  鳥取
  島根
  岡山
  広島
  山口
  徳島
  香川
  愛媛
  高知
  福岡
  佐賀
  長崎
  熊本
  大分
  宮崎
  鹿児島
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注記
Includes bibliographical references and index
内容説明・目次
内容説明
Advanced techniques for characterizing thin film growth in situ help to develop improved understanding and faster diagnosis of issues with the process. In situ characterization of thin film growth reviews current and developing techniques for characterizing the growth of thin films, covering an important gap in research.Part one covers electron diffraction techniques for in situ study of thin film growth, including chapters on topics such as reflection high-energy electron diffraction (RHEED) and inelastic scattering techniques. Part two focuses on photoemission techniques, with chapters covering ultraviolet photoemission spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS) and in situ spectroscopic ellipsometry for characterization of thin film growth. Finally, part three discusses alternative in situ characterization techniques. Chapters focus on topics such as ion beam surface characterization, real time in situ surface monitoring of thin film growth, deposition vapour monitoring and the use of surface x-ray diffraction for studying epitaxial film growth.With its distinguished editors and international team of contributors, In situ characterization of thin film growth is a standard reference for materials scientists and engineers in the electronics and photonics industries, as well as all those with an academic research interest in this area.
目次
Contributor contact details
Chapter 1: Reflection high-energy electron diffraction (RHEED) for in situ characterization of thin film growth
Abstract:
1.1 Reflection high-energy electron diffraction (RHEED) and pulsed laser deposition (PLD)
1.2 Basic principles of RHEED
1.3 Analysis of typical RHEED patterns: the influence of surface disorder
1.4 Crystal growth: kinetics vs thermodynamics
1.5 Variations of the specular intensity during deposition
1.6 Kinetical growth modes and the intensity response in RHEED
1.7 RHEED intensity variations and Monte Carlo simulations
1.8 Conclusions
1.9 Acknowledgements
Chapter 2: Inelastic scattering techniques for in situ characterization of thin film growth: backscatter Kikuchi diffraction
Abstract:
2.1 Introduction
2.2 Kikuchi patterns
2.3 Kikuchi lines in reflection high-energy electron diffraction (RHEED) images
2.4 Dual-screen RHEED and Kikuchi pattern collection
2.5 Lattice parameter determination
2.6 Epitaxial film strain determination
2.7 Kinematic and dynamic scattering
2.8 Epitaxial film structure determination
2.9 Conclusion
Chapter 3: Ultraviolet photoemission spectroscopy (UPS) for in situ characterization of thin film growth
Abstract:
3.1 Introduction
3.2 Principles of ultraviolet photoemission spectroscopy (UPS)
3.3 Applications of UPS to thin film systems
3.4 Future trends
Chapter 4: X-ray photoelectron spectroscopy (XPS) for in situ characterization of thin film growth
Abstract:
4.1 Introduction
4.2 In situ monitoring of thin film growth
4.3 Measuring the reaction of thin films with gases using ambient pressure X-ray photoelectron spectroscopy (XPS)
4.4 In situ measurements of buried interfaces using high kinetic energy XPS (HAXPES)
4.5 Conclusions
4.6 Acknowledgments
Chapter 5: In situ spectroscopic ellipsometry (SE) for characterization of thin film growth
Abstract:
5.1 Introduction
5.2 Principles of ellipsometry
5.3 In situ spectroscopic ellipsometry (SE) characterization
5.4 In situ considerations
5.5 Further in situ SE examples
5.6 Conclusions
5.8 Acknowledgments
Chapter 6: In situ ion beam surface characterization of thin multicomponent films
Abstract:
6.1 Introduction
6.2 Background to ion backscattering spectrometry and time-of-flight (TOF) ion scattering and recoil methods
6.3 Experimental set-ups
6.4 Studies of film growth processes relevant to multicomponent oxides
6.5 Conclusions
6.6 Acknowledgments
Chapter 7: Spectroscopies combined with reflection high-energy electron diffraction (RHEED) for real-time in situ surface monitoring of thin film growth
Abstract:
7.1 Introduction
7.2 Overview of processes and excitations by primary electrons in the surface
7.3 Recombination and emission processes
7.4 Descriptions and results of in situ spectroscopies combined with reflection high-energy electron diffractio (RHEED)
7.5 Conclusion and future trends
Chapter 8: In situ deposition vapor monitoring
Abstract:
8.1 Introduction
8.2 Overview of vapor flux monitoring
8.3 Quartz crystal microbalance (QCM)
8.4 Vapor ionization techniques
8.5 Optical absorption spectroscopy techniques
8.6 Summary of techniques and resources
8.7 Case studies
8.8 Conclusions
8.9 Acknowledgments
Chapter 9: Real-time studies of epitaxial film growth using surface X-ray diffraction (SXRD)
Abstract:
9.1 Introduction
9.2 Growth kinetics studies of pulsed laser deposition (PLD) using surface X-ray diffraction (SXRD)
9.3 Real-time SXRD in SrTiO3 PLD: an experimental case study
9.4 Future trends
Acknowledgment
Index
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