Advanced high voltage power device concepts

著者

• Baliga, B. Jayant

書誌事項

Advanced high voltage power device concepts

B. Jayant Baliga

Springer, c2011

• : [hardcover]

注記

Includes bibliographical references and index

内容説明・目次

内容説明

The devices described in "Advanced MOS-Gated Thyristor Concepts" are utilized in microelectronics production equipment, in power transmission equipment, and for very high power motor control in electric trains, steel-mills, etc. Advanced concepts that enable improving the performance of power thyristors are discussed here, along with devices with blocking voltage capabilities of 5,000-V, 10,000-V and 15,000-V. Throughout the book, analytical models are generated to allow a simple analysis of the structures and to obtain insight into the underlying physics. The results of two-dimensional simulations are provided to corroborate the analytical models and give greater insight into the device operation.

目次

1 Introduction.- 2 Silicon Thyristors.- 3 Silicon Carbide Thyristors.- 4 Silicon GTO.- 5 Silicon IGBT.- 6 SiC Planar MOSFET Structures.- 7 Silicon Carbide IGBT.- 8 Silicon MCT.- 9 Silicon BRT.- 10 Silicon EST.- 11 Synopsis.

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詳細情報

• NII書誌ID(NCID): BB07671413
• ISBN:
  • 9781461402688
• LCCN: 2011932228
• 出版国コード: us
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: New York
• ページ数/冊数: xvi, 568 p.
• 大きさ: 24 cm