Einstein relation in compound semiconductors and their nanostructures

Bibliographic Information

Einstein relation in compound semiconductors and their nanostructures

Kamakhya Prasad Ghatak, Sitangshu Bhattacharya, Debashis De

(Springer series in materials science, v. 116)

Springer, c2010

  • pbk

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Includes bibliographical references and index

Description and Table of Contents

Description

In recent years, with the advent of ?ne line lithographical methods, molecular beam epitaxy, organometallic vapour phase epitaxy and other experimental techniques, low dimensional structures having quantum con?nement in one, two and three dimensions (such as inversion layers, ultrathin ?lms, nipi's, quantum well superlattices, quantum wires, quantum wire superlattices, and quantum dots together with quantum con?ned structures aided by various other ?elds) have attracted much attention, not only for their potential in uncovering new phenomena in nanoscience, but also for their interesting applications in the realm of quantum e?ect devices. In ultrathin ?lms, due to the reduction of symmetry in the wave-vector space, the motion of the carriers in the direction normal to the ?lm becomes quantized leading to the quantum size e?ect. Such systems ?nd extensive applications in quantum well lasers, ?eld e?ect transistors, high speed digital networks and also in other low dimensional systems. In quantum wires, the carriers are quantized in two transverse directions and only one-dimensional motion of the carriers is allowed. The transport properties of charge carriers in quantum wires, which may be studied by utilizing the similarities with optical and microwave waveguides, are currently being investigated. Knowledge regarding these quantized structures may be gained from original research contributions in scienti?c journals, proceedings of international conferences and various - view articles.

Table of Contents

Basics of the Einstein Relation.- The Einstein Relation in Bulk Specimens of Compound Semiconductors.- The Einstein Relation in Compound Semiconductors Under Magnetic Quantization.- The Einstein Relation in Compound Semiconductors Under Crossed Fields Configuration.- The Einstein Relation in Compound Semiconductors Under Size Quantization.- The Einstein Relation in Quantum Wires of Compound Semiconductors.- The Einstein Relation in Inversion Layers of Compound Semiconductors.- The Einstein Relation in Nipi Structures of Compound Semiconductors.- The Einstein Relation in Superlattices of Compound Semiconductors in the Presence of External Fields.- The Einstein Relation in Compound Semiconductors in the Presence of Light Waves.- The Einstein Relation in Compound Semiconductors Under Magnetic Quantization.- Conclusion and Future Research.

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