Rare-earth doping of advanced materials for photonic applications--2011 : symposium held April 25-29, 2011, San Francisco, California, U.S.A.
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書誌事項
Rare-earth doping of advanced materials for photonic applications--2011 : symposium held April 25-29, 2011, San Francisco, California, U.S.A.
（Materials Research Society symposium proceedings, v. 1342）
Materials Research Society , Cambridge University Press, 2012
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注記
"Symposium V 'Rare Earth Doping of Advanced Materials for Photonic Applications' took place during the 2011 Spring Meeting of the Materials Research Society in San Francisco, California from April 25-29, 2011."--Pref
Includes bibliographical references and indexes
内容説明・目次
内容説明
Symposium V, 'Rare-Earth Doping of Advanced Materials for Photonic Applications', Spring Meeting, Materials Research Society, San Francisco, April 25 29, 2011. It brought together researchers from a number of fields that traditionally do not interact closely with each other and provided the semiconductor, phosphors and device communities with a unique opportunity to discuss fundamental topics of common interest that underlie the emission in rare-earth-doped materials. Such a mix of different research topics, silicon photonics, phosphors, oxides and wide band gap materials including III-nitride semiconductors, to name a few, greatly promotes a healthy and vigorous exchange of ideas. The goal of this symposium was to highlight the status of light emission at infrared and visible wavelengths from rare-earth-doped phosphors as well as semiconductors. Issues of rare-earth-materials applications for green technologies, sustainability and opportunities for development of multifunctional devices utilizing magnetic, electric and pressure stimuli were also addressed.
目次
- Part I. ZnO, GaN, Phosphors: 1. Rare earth materials challenge to national defense: material scientist's perspective Shiva Hullavarad
- 2. Electroluminescence properties of Eu-doped GaN-based light-emitting diodes grown by organometallic vapor phase epitaxy Atsushi Nishikawa
- 3. Photoluminescence X-ray excitation spectra in Eu-doped GaN grown by organometallic vapor phase epitaxy Shuichi Emura
- 4. Nature and excitation mechanism of the emission-dominating minority Eu-center in GaN grown by organometallic vapor-phase epitaxy Jonathan Poplawsky
- 5. Damage formation in GaN under medium energy range implantation of rare earth ions: a combined TEM, XRD and RBS/C investigation Bertrand Lacroix
- Part II. Insulating Materials: Lasers and Phosphors: 6. Upconversion in rare-earth ion-doped NaYF4 crystals and nanocolloids Darayas Patel
- 7. Preparation of luminescent inorganic core/shell-structured nanoparticles Moritz Milde
- 8. Vacuum deposited erbium-doped NIR luminescent organic thin films for 1.5 m optical amplication applications Christophe Galindo
- 9. Multicolor luminescence from Ca3Y2(SiO4)3:Eu2+,Eu3+ material Anna Dobrowolska
- 10. Efficient near-infrared luminescence and energy transfer in Nd-Bi co-doped zeolites Zhenhua Bai
- 11. Red-emitting Ca(1-x)SrxS:Eu2+ phosphors as light converters for plant-growth applications Miroslaw Batentschuk
- 12. Photostimulable fluorescent nanoparticles for biological imaging Andres Osvet
- 13. Imaging upconversion from NaYF4:Er:Yb nanoparticles on Au and Ag nanostructured substrates Steve Smith
- Part III. Rare Earth Ions in Group III - Nitrides: 14. Ultraviolet light emitting devices using AlGdN Takashi Kita
- 15. Theoretical investigation of Er-O co-doping in hexagonal GaN Simone Sanna
- 16. Photoluminescence of Eu-doped GaN Kevin O'Donnell
- 17. Site selective magneto-optical studies of Eu ions in gallium nitride Nathaniel Woodward.
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