Semiconductor devices : physics and technology
著者
書誌事項
Semiconductor devices : physics and technology
Wiley, c2013
3rd ed., international student version
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注記
Includes bibliographical references and index
内容説明・目次
内容説明
Semiconductor Devices: Physics and Technology, Third Edition is an introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. It begins with a brief historical review of major devices and key technologies and is then divided into three sections: semiconductor material properties, physics of semiconductor devices and processing technology to fabricate these semiconductor devices.
目次
- Preface vii Acknowledgments ix CHAPTER 0 1 Introduction 0.1 Semiconductor Devices 1 0.2 Semiconductor Technology 6 Summary 12 PART I SEMICONDUCTOR PHYSICS CHAPTER 1 Energy Bands and Carrier Concentration in Thermal Equilibrium 15 1.1 Semiconductor Materials 15 1.2 Basic Crystal Structures 17 1.3 Valence Bonds 22 1.4 Energy Bands 23 1.5 Intrinsic Carrier Concentration 29 1.6 Donors and Acceptors 34 Summary 40 CHAPTER 2 Carrier Transport Phenomena 43 2.1 Carrier Drift 43 2.2 Carrier Diffusion 53 2.3 Generation and Recombination Processes 56 2.4 Continuity Equation 62 2.5 Thermionic Emission Process 68 2.6 Tunneling Process 69 2.7 Space-Charge Effect 71 2.8 High-Field Effects 73 Summary 77 PART II SEMICONDUCTOR DEVICES CHAPTER 3 p-n Junction 82 3.1 Thermal Equilibrium Condition 83 3.2 Depletion Region 87 3.3 Depletion Capacitance 95 3.4 Current-Voltage Characteristics 99 3.5 Charge Storage and Transient Behavior 108 3.6 Junction Breakdown 111 3.7 Heterojunction 117 Summary 120 CHAPTER 4 Bipolar Transistors and Related Devices 123 4.1 Transistor Action 124 4.2 Static Characteristics of Bipolar Transistors 129 4.3 Frequency Response and Switching of Bipolar Transistors 137 4.4 Nonideal Effects 142 4.5 Heterojunction Bipolar Transistors 146 4.6 Thyristors and Related Power Devices 149 Summary 155 CHAPTER 5 MOS Capacitor and MOSFET 161 5.1 Ideal MOS Capacitor 161 5.2 SiO2-Si MOS Capacitor 170 5.3 Carrier Transport in MOS Capacitors 175 5.4 Charge-Coupled Devices (CCD) 178 5.5 MOSFET Fundamentals 181 Summary 193 CHAPTER 6 Advanced MOSFET and Related Devices 196 6.1 MOSFET Scaling 196 6.2 CMOS and BiCMOS 206 6.3 MOSFET on Insulator 211 6.4 MOS Memory Structures 215 6.5 Power MOSFET 224 Summary 225 CHAPTER 7 MESFET and Related Devices 230 7.1 Metal-Semiconductor Contacts 231 7.2 MESFET 242 7.3 MODFET 251 Summary 257 CHAPTER 8 Microwave Diodes
- Quantum-Effect and Hot-Electron Devices 260 8.1 Microwave Frequency Bands 261 8.2 Tunnel Diode 262 8.3 IMPATT Diode 262 8.4 Transferred-Electron Devices 267 8.5 Quantum-Effect Devices 271 8.6 Hot-Electron Devices 276 Summary 279 CHAPTER 9 Light Emitting Diodes and Lasers 283 9.1 Radiative Transitions and Optical Absorption 283 9.2 Light-Emitting Diodes 289 9.3 Various Light-Emitting Diodes 294 9.4 Semiconductor Lasers 305 Summary 322 CHAPTER 10 Photodetectors and Solar Cells 326 10.1 Photodetectors 326 10.2 Solar Cells 339 10.3 Silicon and Compound-Semiconductor Solar Cells 346 10.4 Third-Generation Solar Cells 351 10.5 Optical Concentration 355 Summary 355 PART III SEMICONDUCTOR TECHNOLOGY CHAPTER 11 Crystal Growth and Epitaxy 360 11.1 Silicon Crystal Growth from the Melt 360 11.2 Silicon Float-Zone Proces 366 11.3 GaAs Crystal-Growth Techniques 370 11.4 Material Characterization 373 11.5 Epitaxial-Growth Techniques 380 11.6 Structures and Defects in Epitaxial Layers 387 Summary 391 CHAPTER 12 Film Formation 395 12.1 Thermal Oxidation 395 12.2 Chemical Vapor Deposition of Dielectrics 403 12.3 Chemical Vapor Deposition of Polysilicon 412 12.4 Atom Layer Deposition 415 12.5 Metallization 417 Summary 428 CHAPTER 13 Lithography and Etching 432 13.1 Optical Lithography 432 13.2 Next-Generation Lithographic Methods 445 13.3 Wet Chemical Etching 451 13.4 Dry Etching 454 Summary 466 CHAPTER 14 Impurity Doping 471 14.1 Basic Diffusion Process 472 14.2 Extrinsic Diffusion 481 14.3 Diffusion-Related Processes 485 14.4 Range of Implanted Ions 488 14.5 Implant Damage and Annealing 495 14.6 Implantation-Related Processes 500 Summary 506 CHAPTER 15 Integrated Devices 511 15.1 Passive Components 513 15.2 Bipolar Technology 517 15.3 MOSFET Technology 522 15.4 MESFET Technology 535 15.5 Challenges for Nanoelectronics 538 Summary 543 APPENDIX A List of Symbols 547 APPENDIX B International Systems of Units (SI Units) 549 APPENDIX C Unit Prefixes 550 APPENDIX D Greek Alphabet 551 APPENDIX E Physical Constants 552 APPENDIX F Properties of Important Element and Binary Compound Semiconductors at 300 K 553 APPENDIX G Properties of Si and GaAs at 300 K 554 APPENDIX H Derivation of the Density of States in a Semiconductor 555 APPENDIX I Derivation of Recombination Rate for Indirect Recombination 559 APPENDIX J Calculation of the Transmission Coefficient for a Symmetric Resonant-Tunneling Diode 561 APPENDIX K Basic Kinetic Theory of Gases 563 APPENDIX L Answers to Selected Problems 565 Photo credits 568 Index 569
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