Compound semiconductors for generating, emitting, and manipulating energy : symposium held November 28-December 2, 2011, Boston, Massachusetts, U.S.A.
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Bibliographic Information
Compound semiconductors for generating, emitting, and manipulating energy : symposium held November 28-December 2, 2011, Boston, Massachusetts, U.S.A.
（Materials Research Society symposium proceedings, v. 1396）
Materials Research Society, 2012
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"Symposium O, 'Compound Semiconductors for Generating, Emitting, and Manipulating Energy' was held November 28-December 2 at the 2011 MRS Fall Meeting in the Hynes Convintion Center, Boston, Massachusetts."--Pref
Includes bibliographical references and index
Description and Table of Contents
Description
Symposium O, 'Compound Semiconductors for Generating, Emitting and Manipulating Energy', was held November 28-December 2 at the 2011 MRS Fall Meeting in Boston, Massachusetts. Energy is arguably the most important issue for the future and this symposium provided a forum to discuss the research and development for collecting, emitting and manipulating energy. A particular focus was made on recent advances in the scientific and technological exploration of compound semiconductors for applications as light emitters, solar cells and transistors. Additionally, the topics covered in this proceeding include a broad range reaching from fundamental material development to device demonstration and industrial implementation. Contributions were made on the fabrication of devices such as LEDs, lasers, high-power, high-speed electronics and III-V solar cells. This symposium proceeding provides insight into emerging trends in these exciting technologies.
Table of Contents
- Part I. III-Nitride LEDS: 1. Understanding MOCVD gas chemistry to reduce the cost of ownership for GaN LED and AsP CPV technologies
- 2. Optimization of the optical and electrical properties of GaN vertical light emitting diode with current block layer
- 3. Enhanced emission from InxGa1-xN-based LED structures using III-nitride based distributed Bragg reflector
- 4. Assessment of transparent conducting zinc oxide as a tunneling contact to p-GaN
- Part II. Optoelectronics: 5. Integrated optoelectronic devices on silicon
- 6. Mid-infrared lead-salt surface emitting photonic crystal laser on silicon
- 7. Cathodoluminescence characterization of Si-doped orientation patterned GaAs crystals
- 8. Synthesis and characterization of multi-walled carbon nanotubes with semiconductor nanoparticles for optoelectronics
- 9. Influences of hydrogen passivation on NIR photodetection of n-type b-FeSi2/p-type Si heterojunction photodiodes fabricated by facing-targets direct-current sputtering
- 10. 1.54lm luminescence of b-FeSi2 grown on Au-coated Si substrates
- Part III. Solar Cell Technology: 11. The research and development for collecting, emitting, and manipulating energy
- 12. ZnO/ZnSe type II core-shell nanowire array solar cell
- 13. Tailoring of CdS nano films through CBD-isochronal synthesis for PV applications
- Part IV. Thermoelectrics: 14. A systematic study of the thermoelectric properties of GaN-based wide band gap semiconductors
- 15. Cost performance trade-off in thermoelectric modules with low fractional area coverage
- Part V. Transistor Technology: 16. The effects of device dimension, substrate temperature, and gate metallization on the reliability of AlGaN/GaN high electron mobility transistors
- 17. Copper oxide edge-termination for GaN Schottky barrier diodes with low turn-on voltage
- 18. Properties of MOCVD-grown GaN:Gd films for spintronic devices
- 19. Performance comparison and design issue on different GaN power transistor structures
- Part VI. Photonics and Optics: 20. Nonlinear optical techniques for characterization of wide bandgap semiconductor electronic properties: III-nitrides, SiC, and diamonds
- 21. Couplings in GaAs/AlGaAs/metal photonic waveguides with metallic variations
- 22. Optical characterization of a InGaN/GaN microcavity with epitaxial AlInN/GaN bottom DBR
- 23. AlN/GaN distributed Bragg reflectors grown via metal organic vapor phase epitaxy using GaN insertion layers
- 24. GaN-based neutron scintillators with a 6LiF conversion layer
- Part VII. Compound Semiconductor Characterization: 25. Effects of silicon doping and threading dislocation density on stress evolution in AlGaN films
- 26. Characterization of InGaN and InAlN epilayers by microdiffraction X-ray reciprocal space mapping
- 27. Infrared ellipsometry and near-infrared-to-vacuum-ultraviolet ellipsometry study of free-charge carrier properties in In-polar p-type InN
- 28. Photoluminescence study of damage introduced in GaN by Ar- and Kr-plasmas etching
- 29. The influence of Si doping to BP(100) layer on Si(100) by TEM
- Part VIII. Compound Semiconductors Processing: 30. Molecular beam epitaxial growth of nonpolar a-plane InN/GaN heterostructures
- 31. Investigating GaSb(001) dry etching by ICP-RIE on a non-silicon containing sample holder with no organic gases
- 32. Amorphous silicon Bragg reflectors fabricated by oblique angle deposition
- 33. Manipulating 3C-SiC nanowire morphology through gas flow dynamics
- 34. Investigation of band-gap states in AlGaN/GaN hetero-structures with different growth conditions of GaN buffer layers
- 35. Epitaxial growth and characterization of cubic GaN on BP/Si(100) substrates
- 36. InN on GaN heterostructure growth by migration enhanced epitaxial afterglow (MEAglow)
- 37. Nuclear spin polarization by out-of-plane spin injection from ferromagnet into an InAs heterostructure.
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