Fabrication and characterization of dilute nitride indium antimonide for long wavelength infrared applications

著者

    • Tram, Pham Huynh
    • Peng, Lim Kim
    • Fatt, Yoon Soon

書誌事項

Fabrication and characterization of dilute nitride indium antimonide for long wavelength infrared applications

Pham Huynh Tram, Lim Kim Peng and Yoon Soon Fatt

（Chemistry research and applications）

Nova Science Publishers, c2012

  • : softcover

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注記

Includes bibliographical references (p. [125]-135) and index

内容説明・目次

内容説明

Recently, there has been increased interest in long wavelength infrared (LWIR) materials because of their applications in civilian and military imaging. Among many on-going research materials, dilute nitride indium antimonide (InSbN) has attracted great attention because of the unique characteristics of dilute nitride III-V compounds, which could complement the ubiquitous mercury cadmium telluride (HgCdTe) material in terms of performance and manufacturing. This book presents the molecular beam epitaxy (MBE) growth and characterisation of InSb and InSbN materials, based on the research work under the Compound Semiconductor and Quantum Information group, Nanyang Technological University, Singapore.

目次

  • Preface
  • Introduction of InSb & InSbN materials
  • Introduction of solid source molecular beam epitaxy & common post-growth characterization techniques
  • Solid-source MBE growth of InSb & its characterization
  • Characterization of carbon-doped InSb diode grown by solid-source MBE
  • Nitrogen compositions & point defects in InSbN grown using radio frequency plasma assisted MBE
  • Heteroepitaxy & properties of InSbN on GaAs substrate
  • Effects of thermal annealing in InSbN & preliminary stage of InSbN photodetectors
  • Concluding remarks of research on InSb & InSbN materials
  • Bibliography
  • Index.

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