CiNii 図書 - Fundamentals of modern VLSI devices

Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.

Physical constants and unit conversions
List of symbols
Preface to the second edition
Preface to the first edition
1. Introduction
2. Basic device physics
3. MOSFET devices
4. CMOS device design
5. CMOS performance factors
6. Bipolar devices
7. Bipolar device design
8. Bipolar performance factors
9. Memory devices
10. Silicon-on-insulator devices
Appendices: 1. CMOS process flow
2. Outline of a process for fabricating modern n-p-n bipolar transistors
3. Einstein relations
4. Spatial variation of quasi-Fermi potentials
5. Generation and recombination processes and space-charge-region current
6. Diffusion capacitance of a p-n diode
7. Image-force-induced barrier lowering
8. Electron-initiated and hole-initiated avalanche breakdown
9. An analytical solution for the short-channel effect in subthreshold
10. Generalized MOSFET scale length model
11. Drain current model of a ballistic MOSFET
12. Quantum-mechanical solution in weak inversion
13. Power gain of a two-port network
14. Unity-gain frequencies of a MOSFET transistor
15. Determination of emitter and base series resistances
16. Intrinsic-base resistance
17. Energy-band diagram of a Si-SiGe n-p diode
18. fr and fmax of a bipolar transistor
References
Index.

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Fundamentals of modern VLSI devices

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