III-nitride semiconductors and their modern devices
Author(s)
Bibliographic Information
III-nitride semiconductors and their modern devices
(Series on semiconductor science and technology, 18)
, 2013
- hbk.
Available at 2 libraries
  Aomori
  Iwate
  Miyagi
  Akita
  Yamagata
  Fukushima
  Ibaraki
  Tochigi
  Gunma
  Saitama
  Chiba
  Tokyo
  Kanagawa
  Niigata
  Toyama
  Ishikawa
  Fukui
  Yamanashi
  Nagano
  Gifu
  Shizuoka
  Aichi
  Mie
  Shiga
  Kyoto
  Osaka
  Hyogo
  Nara
  Wakayama
  Tottori
  Shimane
  Okayama
  Hiroshima
  Yamaguchi
  Tokushima
  Kagawa
  Ehime
  Kochi
  Fukuoka
  Saga
  Nagasaki
  Kumamoto
  Oita
  Miyazaki
  Kagoshima
  Okinawa
  Korea
  China
  Thailand
  United Kingdom
  Germany
  Switzerland
  France
  Belgium
  Netherlands
  Sweden
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  United States of America
Note
Includes bibliographical references and index
Description and Table of Contents
Description
This book is dedicated to GaN and its alloys AlGaInN (III-V nitrides), semiconductors with intrinsic properties well suited for visible and UV light emission and electronic devices working at high temperature, high frequency, and harsh environments. There has been a rapid growth in the industrial activity relating to GaN, with GaN now ranking at the second position (after Si) among all semiconductors. This is mainly thanks to LEDs, but also to the emergence of lasers
and high power and high frequency electronics. GaN-related research activities are also diversifying, ranging from advanced optical sources and single electron devices to physical, chemical, and biological sensors, optical detectors, and energy converters.
All recent developments of nitrides and of their technology are gathered here in a single volume, with chapters written by world leaders in the field. This third book of the series edited by B. Gil is complementary to the preceding two, and is expected to offer a modern vision of nitrides and of their devices to a large audience of readers.
Table of Contents
- 1. Development of the nitride-based UV/DUV LEDs
- 2. The homoepitaxial challenge: GaN crystals grown at high pressure for laser diodes and laser diode arrays
- 3. Epitaxial growth and benefits of GaN on silicon
- 4. The growth of bulk aluminum nitride
- 5. Epitaxial growth of nitride quantum dots
- 6. Properties of InAlN layers nearly lattice-matched to GaN and their use for photonics and electronics
- 7. Growth and optical properties of aluminum rich AlGaN heterostructures
- 8. Optical and structural properties of InGaN light emitters on non- and semipolar GaN
- 9. GaN-based single-nanowire devices
- 10. Advanced photonic and nanophotonic devices
- 11. Nitride-based electron devices for high power / high frequency applications
- 12. Intersubband transitions in low dimensional nitrides
- 13. The slow light in gallium nitride
- 14. Nitride devices and their biofunctionalization for biosensing applications
- 15. Heterovalent ternary II-IV-N2 compounds: perspectives for a new class of wide-band-gap nitrides
- 16. Terahertz emission in polaritonic systems with nitrides
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