Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation

著者

• European Conference on Silicon Carbide and Related Materials
• Lebedev, Alexander A.
• Davydov, Sergey Yu.
• Ivanov, Pavel A.
• Levinshteĭn, M. E. (Mikhail Efimovich)

書誌事項

Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation

edited by Alexander A. Lebedev ... [et al.]

（Materials science forum, v. 740-742）

Trans Tech Publications, c2013

タイトル別名

ECSCRM 2012 : Saint-Petersburg Russia

注記

Includes bibliographical references and index

内容説明・目次

内容説明

Volume is indexed by Thomson Reuters CPCI-S (WoS). The volume on Silicon Carbide and Related Materials is divided into 10 chapters ranging from "Bulk growth" to "Device and application". The reports demonstrate the technical and scientific advances in the related areas: 150 mm 4H-SiC wafers are now commercially available, a significant improvement of the carrier lifetime (up to 35 ms) for n-type SiC epi-layers has been achieved, SiC diodes have a large market share in server and telecom power applications requiring the maximum efficiency, and a variety of 1- cm2, 15 kV class bipolar devices have been demonstrated, including PN Diodes, IGBTs and GTO. In general, the number of contributions devoted to application of SiC and related materials, GaN and solid solutions based on this material, and graphene is steadily increasing compared to the 2011 edition.

目次

Preface, Sponsors and Committees Chapter 1: Bulk Growth Growth of 4H-SiC in Current-Controlled Liquid Phase Epitaxy Growth of Low Basal Plane Dislocation Density 4H-SiC Crystals in Controlled Temperature Distribution inside the Crucible SiC Single Crystal Growth on Dual Seed with Different Surface Properties Effect of Surface Polarity on the Conversion of Threading Dislocations in Solution Growth Morphological and Optical Stability in Growth of Fluorescent SiC on Low Off-Axis Substrates Growth Rate and Surface Morphology of 4H-SiC Single Crystal Grown under Various Supersaturations Using Si-C Solution Application of 3-D X-Ray Computed Tomography for the In Situ Visualization of the SiC Crystal Growth Interface during PVT Bulk Growth Investigation of Solution Growth of SiC by Temperature Difference Method Using Fe-Si Solvent Real-Time Observation of High Temperature Interface between SiC Substrate and Solution during Dissolution of SiC Polycrystalline SiC as Source Material for the Growth of Fluorescent SiC Layers On Peculiarities of Defect Formation in 6 -SiC Bulk Single Crystals Grown by PVT Method Absence of Back Stress Effect in the PVT Growth of 6H Silicon Carbide Modeling of the Mass Transport during Homo-Epitaxial Growth of Silicon Carbide by Fast Sublimation Epitaxy The Study of the Geometry and Growth Trend of Silicon Carbide Crystals Structural Perfection of Silicon Carbide Crystals Grown on Profiled Seeds by Sublimation Method Growth of Large Diameter 4H-SiC by TSSG Technique SiC Sublimation Growth at Small Spacing between Source and Seed High-Speed Growth of 4H-SiC Single Crystal Using Si-Cr Based Melt The Effect of Modified Crucible Design and Seed Attachment on SiC Crystal Grown by PVT Sublimation Growth of AlN and GaN Bulk Crystals on SiC Seeds Growth of Low-Defect SiC and AlN Crystals in Refractory Metal Crucibles Defect Generation Mechanisms in PVT-Grown AlN Single Crystal Boules Sublimation Growth of Bulk AlN Crystals on SiC Seeds Growth of (0001) AlN Single Crystals Using Carbon-Face SiC as Seeds AlGaN Solid Solution Grown on 3C-SiC(111)/Si(111) Pseudosubstrates Effect of a Gas Pressure on the Growth Rate of AlN Layer Chapter 2: Graphen Growth and Characterization Impact of Substrate Steps and of Monolayer-Bilayer Junctions on the Electronic Transport in Epitaxial Graphene on 4H-SiC (0001) X-Ray Diffraction and Raman Spectroscopy Study of Strain in Graphene Films Grown on 6H-SiC(0001) Using Propane-Hydrogen-Argon CVD Optimising the Growth of Few-Layer Graphene on Silicon Carbide by Nickel Silicidation Raman Spectroscopy and XPS Analysis of Epitaxial Graphene Grown on 4H-SiC (0001) Substrate under an Argon Pressure of 900 mbar Environment A DC Comparison Study between H-Intercalated and Native Epi-Graphenes on SiC Substrates Graphene-on-Porous-Silicon Carbide Structures Low-Temperature Transport Properties of Graphene and Multilayer Graphene on 6H-SiC Energy Gaps Induced by a Semiconducting Substrate in the Epitaxial Graphene Density of States High Temperature Stability of Oxygen Functionalized Epitaxial Graphene/Metal Contact Interfaces Silicon Nitride as Top Gate Dielectric for Epitaxial Graphene Thickness Uniformity and Electron Doping in Epitaxial Graphene on SiC Surface Evolution of 4H-SiC(0001) during In Situ Surface Preparation and its Influence on Graphene Properties Study of Carbonization Process on Surface of Si Substrate in High Vacuum Region with Hydrocarbon Gas Chapter 3: Epitaxial Growth 4H SiC Fast Growth Rate Epitaxy by Chloride Precursors On-Axis Homoepitaxial Growth of 4H-SiC PiN Structure for High Power Applications Study of the Nucleation of p-Doped SiC in Selective Epitaxial Growth Using VLS Transport Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition Step-Flow Growth of Fluorescent 4H-SiC Layers on 4 Degree Off-Axis Substrates Reduction of Threading Screw Dislocation Utilizing Defect Conversion during Solution Growth of 4H-SiC The Growth of 3-Inch 4H-SiC Si-Face Epitaxial Wafer with Vicinal Off-Angle Step-Bunching Free and 30 m-Thick SiC Epitaxial Layer Growth on 150 mm SiC Substrate Step Instability in Sublimation Epitaxy on Low Off-Axis 6H-SiC Role of Cl/Si Ratio in the Low-Temperature Chloro-Carbon Epitaxial Growth of SiC Vapor-Phase Catalyst Delivery Method for Growing SiC Nanowires Simulation of Gas-Phase Chemistry for Selected Carbon Precursors in Epitaxial Growth of SiC The Nucleation and Propagation of Threading Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC Uniformity and Morphology of 10 x 100mm 4 Degrees Off-Axis 4H-SiC Epitaxial Layers and their Effect on Device Performance Surface Preparation of 4 Degrees Off-Axis 4H-SiC Substrate for Epitaxial Growth Study of the Effects of Growth Rate, Miscut Direction and Postgrowth Argon Annealing on the Surface Morphology of Homoepitaxially Grown 4H Silicon Carbide Films Amorphous Silicon Carbide Film Formation at Room Temperature by Monomethylsilane Gas 10 x 100 mm 4H-SiC Epitaxial Growth by Warm-Wall Planetary Reactor Defect Revelation and Evaluation of 4H Silicon Carbide by Optimized Molten KOH Etching Method Low Temperature Homoepitaxial Growth of 4H-SiC on 4 Degrees Off-Axis Carbon-Face Substrate Using BTMSM Source Morphology Optimization of Very Thick 4H-SiC Epitaxial Layers Chapter 4: Epitaxial Growth 3C SiC 3C-SiC Heteroepitaxy on Hexagonal SiC Substrates 3C-SiC Growth on (001) Si Substrates by Using a Multilayer Buffer Heteroepitaxial Growth of 3C-SiC on Polar Faces of 6H-SiC Substrates, TEM Investigations Innovative 3C-SiC on SiC via Direct Wafer Bonding Towards Bulk-Like 3C-SiC Growth Using Low Off-Axis Substrates Color Chart for Thin SiC Films Grown on Si Substrates Defect Generation and Annihilation in 3C-SiC-(001) Homoepitaxial Growth by Sublimation Plasma Treatment of 3C-SiC Surfaces Structural Characterization of 3C-SiC Grown Using Methyltrichlorosilane Monte Carlo Study of the Hetero-Polytypical Growth of Cubic on Hexagonal Silicon Carbide Polytypes Post-Growth Process Effect on Hetero-Epitaxial 3C-SiC Wafer Bow and Residual Stress Elaboration of Core Si/Shell SiC Nanowires Bulk 3C-SiC Crystal by Top Seeded Solution Growth Method Microsecond Carrier Lifetimes in Bulk-Like 3C-SiC Grown by Sublimation Epitaxy Structural Investigation of Heteroepitaxial 3C-SiC Grown on 4H-SiC Substrates Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors High-Rate Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate for Qualified Epitaxial Graphene on Silicon p-Doped SiC Growth on Diamond Substrate by VLS Transport Polytype Inclusions in Cubic Silicon Carbide Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate Using Monomethylsilane-Based Gas-Source Molecular-Beam Epitaxy Chapter 5: Characterization of Material and Point Defects Photoluminescence of 8H-SiC P-6H-SiC Conductivity Compensation after Irradiation of 8MeV Protons Raman Investigation of Aluminum-Doped 4H-SiC An EPR Study of Defects in Neutron-Irradiated Cubic SiC Crystals An Extended EDMR Setup for SiC Defect Characterization Comparative Analysis of Defect Formation in Silicon Carbide under Electron and Proton Irradiation Deep Levels in P-Type 4H-SiC Induced by Low-Energy Electron Irradiation Determination of the Electrical Capture Process of the EH6-Center in n-Type 4H-SiC Diffusion Study of Chlorine in SiC by First Principles Calculations Electron Paramagnetic Resonance Studies of Nb in 6H-SiC EPR Study of the Nitrogen Containing Defect Center Created in Self-Assembled 6H SiC Nanostructure Kinetic Monte Carlo Simulation of Impurity Effects on Nucleation and Growth of SiC Clusters on Si(100) Lateral Boron Distribution in Polycrystalline SiC Source Materials Optical Characterization of Compensating Defects in Cubic SiC Optical Properties of the Niobium Centre in 4H, 6H, and 15R SiC Origins of Negative Fixed Charge in Wet Oxidation for SiC Persistent Photoconductivity in p-Type 4H-SiC Bulk Crystals Photoluminescence Spectroscopy of Neutron-Irradiated Cubic SiC Crystals Photoluminescence Topography of Fluorescent SiC and its Corresponding Source Crystals Point Defects in SiC as a Promising Basis for Single-Defect, Single-Photon Spectroscopy with Room Temperature Controllable Quantum States Study on the Correlation between Film Composition and Piezoresistive Properties of PECVD SixCy Thin Films Subsurface Atomic Structure of 4H-SiC (0001) Finished by Plasma-Assisted Polishing Superhyperfine Interactions of the Nitrogen Donors in 4H SiC Studied by Pulsed ENDOR and TRIPLE ENDOR Spectroscopy Temperature Dependence of Raman Scattering in 4H-SiC The Formation of New Periodicities after N-Implantation in 4H- and 6H-SiC Samples The Integrated Evaluation Platform for SiC Wafers and Epitaxial Films Theoretical Study of N Incorporation Effect during SiC Oxidation To the Experimental Determination of the Spontaneous Polarization for the Silicon Carbide Polytypes Chapter 6: Interface Characterization A Comparison of Free Carrier Absorption and Capacitance Voltage Methods for Interface Trap Measurements A New-Type of Defect Generation at a 4H-SiC/SiO2 Interface by Oxidation Induced Compressive Strain Characterization of the Metal-Semiconductor Interface of Pt-GaN Diode Hydrogen Sensors Deep-Level-Transient Spectroscopy Characterization of Mobility-Limiting Traps in SiO2/SiC Interfaces on C-Face 4H-SiC Dislocation Analysis of 4H-/6H-SiC Single Crystals Using Micro-Raman Spectroscopy Effect of Interface Native Oxide Layer on the Properties of Annealed Ni/SiC Contacts Effect of Surface and Interface Recombination on Carrier Lifetime in 6H-SiC Layers Effects of Growth Parameters on SiC/SiO2 Core/Shell Nanowires Radial Structures Electron Transport Features in Heterostructures 3C-SiC(n)/Si(p) at the Elevated Temperatures Impact of AlN Spacer on Electron Mobility of AlGaN/AlN/GaN Structures on Silicon Improvement of Interface State and Channel Mobility Using 4H-SiC (0-33-8) Face Study of Terminated Species on 4H-SiC (0001) Surfaces Planarized by Catalyst-Referred Etching XPS Analysis of 4H-SiC Surfaces Oxidized by Helium-Based Atmospheric-Pressure Water Vapor Plasma for Plasma-Assisted Polishing Chapter 7: Electrical and Structural Characterization Electrical Impact of the Aluminum P-Implant Annealing on Lateral MOSFET Transistors on 4H-SiC N-Epi Hall Effect Characterization of 4H-SiC MOSFETs: Influence of Nitrogen Channel Implantation Interface Defects and Negative Bias Temperature Instabilities in 4H-SiC PMOSFETs - A Combined DCIV/SDR Study Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-Channel Mosfets Correlation of Interface Characteristics to Electron Mobility in Channel-Implanted 4H-SiC Mosfets Characterization of POCl3-Annealed 4H-Sic Mosfets by Charge Pumping Technique Evaluation of PBTS and NBTS in SiC MOS Using In Situ Charge Pumping Measurements A Study of High Temperature DC and AC Gate Stressing on the Performance and Reliability of Power SiC MOSFETs Gate Oxide Stability of 4H-SiC MOSFETs under On/Off-State Bias-Temperature Stress Evidence of Tunneling in n-4H-SiC/SiO2 Capacitors at Low Temperatures Boron Diffusion in Silicon Carbide Recombination and Excess Currents in 4H-SiC Structure with Low-Doped n-Region Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure 3C-, 4H- and 6H-SiC Bulks Studied by Silicon K-Edge X-Ray Absorption A Possible Mechanism for Hexagonal Void Movement Observed during Sublimation Growth of SiC Single Crystals Aluminum Implantation in 4H-SiC: Physical and Electrical Properties Characterization of (4,4)- and (5,3)-Type Stacking-Faults in 4deg.-Off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Photo-Luminescence Spectroscopy Comparison of Etch Pit Shapes on Off-Oriented 4H-SiC Using Different Halogen Gases Complex Study of SiC Epitaxial Films Contact-Free Micropipe Reactions in Silicon Carbide Conversion of Basal Plane Dislocations to Threading Edge Dislocations by Annealing 4H-SiC Epilayers at High Temperatures Dielectric Properties of Thermally Grown SiO2 on 4H-SiC(0001) Substrates Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes Effects of Al Ion Implantation on 3C-SiC Crystal Structure Electrical Characterisation of Epitaxially Grown 3C-SiC Films Electrical Properties of MOS Structures on 4H-SiC (11-20) Face Electrophysical and Optical Properties of 4H-SiC Irradiated with Xe Ions Formation of Epitaxial Defects by Threading Screw Dislocations with a Morphological Feature at the Surface of 4 Off-Axis 4H-SiC Substrates Influence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiC Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers Introducing Color Centers to Silicon Carbide Nanocrystals for In Vivo Biomarker Applications: A First Principles Study Laplace Transform Deep Level Transient Spectroscopy Study of the EH6/7 Center Origin Analyses of Obtuse Triangular Defects in 4deg.-Off 4H-SiC Epitaxial Wafers by Electron Microscopy and by Synchrotron X-Ray Topography Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers Piezoresistivity and Electrical Conductivity of SiC Thin Films Deposited by High Temperature PECVD Radiation Defects Produced in 4H-SiC Epilayers by Proton and Alpha-Particle Irradiation Reliability Investigation of Drain Contact Metallizations for SiC-MOSFETs Stability Investigation of High Heat-Resistant Resin under High Temperature for Ultra-High Blocking Voltage SiC Devices Stress Relaxation Study in 3C-SiC Microstructures by Micro-Raman Analysis and Finite Element Modeling Study of Surface Defects in 4H-SiC Schottky Diodes Using a Scanning Kelvin Probe Chapter 8: MOS Processing 4H-SiC Trench MOSFET with Thick Bottom Oxide An Improvement of Trench Profile of 4H-SiC Trench MOS Barrier Schottky (TMBS) Rectifier Characterization of Diverse Gate Oxides on 4H-SiC 3D Trench-MOS Structures Effect of Interfacial Localization of Phosphorus on Electrical Properties and Reliability of 4H-SiC MOS Devices A Nanoscale Look in the Channel of 4H-SiC Lateral MOSFETs Influence of Post-Implantation Annealing Temperature on MOSFET Performance and Oxide Reliability Investigation of Nitrided Atomic-Layer-Deposited Oxides in 4H-SiC Capacitors and MOSFETs Simulation and Optimization of 4H-SiC DMOSFET Power Transistors Effects of a Post-Oxidation Annealing in Nitrous Oxide on the Morphological and Electrical Properties of SiO2/4H-SiC Interfaces Effects of a Post-Oxidation Annealing in Nitrous Oxide on the Morphological and Electrical Properties of SiO2/4H-SiC Interfaces Effect of NH3 Post-Oxidation Annealing on Flatness of SiO2/SiC Interface Improved Stability of 4H-SiC MOS Device Properties by Combination of NO and POCl3 Annealing Influence of Nitrogen Implantation on Electrical Properties of Al/SiO2/4H-SiC MOS Structure Effect of Suppressing Reoxidation at SiO2/SiC Interface during Post-Oxidation Annealing in N2O with Al2O3 Capping Layer Novel Approach for Improving Interface Quality of 4H-SiC MOS Devices with UV Irradiation and Subsequent Thermal Annealing Relation between Defects on 4H-SiC Epitaxial Surface and Gate Oxide Reliability Sodium Enhanced Oxidation: Absence of Shallow Interface Traps after Removal of Sodium Ions from the SiO2/4H-SiC Interface The Influence of Post-Oxidation Annealing Process in O2 and N2O on the Quality of Al/SiO2/n-Type 4H-SiC MOS Interface Efficient Characterization of Threshold Voltage Instabilities in SiC nMOSFETs Using the Concept of Capture-Emission-Time Maps Transition Metal Oxide-Diamond Interfaces for Electron Emission Applications Chapter 9: Processing Diverse Al+ Implanted 4H-SiC: Improved Electrical Activation and Ohmic Contacts Alloying of Ohmic Contacts to n-Type 4H-SiC via Laser Irradiation Potentialities of Nickel Oxide as Dielectric for GaN and SiC Devices 4H-SiC Trench Schottky Diodes for Next Generation Products Development of SiC Super-Junction (SJ) Device by Deep Trench-Filling Epitaxial Growth Effect of Damage Removal Treatment after Trench Etching on the Reliability of Trench MOSFET Filling of Deep Trench by Epitaxial SiC Growth Ni, NiSi2 and Si Secondary Ohmic Contacts on SiC with High Thermal Stability Optimization of Copper Top-Side Metallization for High Performance SiC-Devices Preparation and Characterization of Deposited Tetraethylorthosilicate-SiO2/SiC MIS Structure Process Variation Tolerant 4H-SiC Power Devices Utilizing Trench Structures Basic Experiment on Atmospheric-Pressure Plasma Etching with Slit Aperture for High-Efficiency Dicing of SiC Wafer Comparative Study on Dry Etching of - and -SiC Nano-Pillars First Experimental Functionalization Results of SiC Nanopillars for Biosensing Applications ICP Etching of 4H-SiC Substrates Large-Area Mapping of Dislocations in 4H-SiC from Carbon-Face (000-1) by Using Vaporized KOH Etching near 1000 DegreesC Model Calculations of SiC Oxide Growth Rates at Sub-Atmospheric Pressures Using the Si and C Emission Model Influence of Contact Metallisation on the High Temperature Characteristics of High- Dielectrics Multi-Wire Electrical Discharge Slicing for Silicon Carbide Slicing of Rotating SiC Ingot by Electric Discharge Machining Study on Reactive Species in Catalyst-Referred Etching of 4H-SiC using Platinum and Hydrofluoric Acid Pressureless Silver Sintering Die-Attach for SiC Power Devices Process Tolerant Single Photolithography/Implantation 120-Zone Junction Termination Extension Solar-to-Hydrogen Conversion Efficiency of Water Photolysis with Epitaxially Grown p-Type SiC Chapter 10: Device and Application Subnanosecond Semiconductor Opening Switch Based on 4H-SiC Junction Diode SiC High Power Devices - Challenges for Assembly and Thermal Management Remarkable Increase in Surge Current Capability of SiC Schottky Diodes Using Press Pack Contacts Reverse Leakage Currents in High-Voltage 4H-SiC Schottky Diodes Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes Comparative Study of n-LIGBT and n-LDMOS Structures on 4H-SiC Charge Pumping Analysis of Monolithically Fabricated 4H-SiC CMOS Structures 16 kV, 1 cm2, 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications SXRT Investigations on Electrically Stressed 4H-SiC PiN Diodes for 6.5 kV Influence of in-Grown Stacking Faults on Electrical Characteristics of 4H-SiC Pin Diode with Long Carrier Lifetime Development of High-Voltage 4H-SiC PiN Diodes on 4 Degrees and 8 Degrees Off-Axis Substrates Electrical Characterization of PiN Diodes with p+ Layer Selectively Grown by VLS Transport 900V, 1.46mOhm-cm2 4H-SiC Depletion Mode Vertical JFET Reliable Operation of SiC Junction-Field-Effect-Transistor Subjected to over 2 Million 600-V Hard Switch Stressing Events A 69-m 600-V-Class Hybrid JFET Thermal Runaway Robustness of SiC VJFETs Reliability Evaluation of 4H-SiC JFETs Using I-V Characteristics and Low Frequency Noise Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET Steady-State Analysis of a Normally-Off 4H-SiC Trench Bipolar-Mode FET Evaluation of the Drive Circuit for a Dual Gate Trench SiC JFET On-State and Switching Performance Comparison of A 600 V-Class Hybrid SiC JFET and Si Superjunction MOSFETs 15 kV IGBTs in 4H-SiC Fabrication of a P-Channel SiC-IGBT with High Channel Mobility Experimental Study of Short-Circuit Capability of Normally-off SiC-BGSITs High-Temperature Characterization of 4H-SiC Darlington Transistors for Low Voltage Applications 1200 V, 3.3 m SiC Bipolar Junction Transistor Power Modules Area-Optimized JTE for 4.5 kV Non Ion-Implanted 4H-SiC BJT 15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off Thyristors Development of High-Voltage 4H-SiC GTOs for Grid-Tied Solar Inverters Pulse Current Characterization of SiC GTO Thyristors with Etched JTE Optical Triggering of 12 kV 1 cm2 4H-SiC Thyristors Optimization of Holding Current in 4H-SiC Thyristors Micromechanics Based on Silicon Carbide High Temperature SiC Sensor with an Isolated Package Bipolar Conduction across a Wafer Bonded p-n Si/SiC Heterojunction Superfast Drift Step Recovery Diodes (DSRDs) and Vacuum Field Emission Diodes Based on 4H-SiC Selective 4H-SiC UV Detectors Full Simulation Study of UV Photodetectors Based on Pn Junctions in Silicon Carbide Fabrication of Broadband Antireflective Sub-Wavelength Structures on Fluorescent SiC Properties of Graphene Side Gate Transistors Investigation of Die Attach for SiC Power Device for 300 DegreesC Applications Insulating Properties of Package for Ultrahigh-Voltage, High-Temperature Devices Power Module Package Structure Capable of Surviving Greater Tj Thermal Cycles Electromagnetic Interference in Silicon Carbide DC-DC Converters 4H-SiC Digital Logic Circuitry Based on P+ Implanted Isolation Walls MESFET Technology Complementary JFET Logic for Low-Power Applications in Extreme Environments PWM Power Supply Using SiC RESURF JFETs with High Speed Switching High-Speed Drive Circuit with Separate Source Terminal for 600 V / 40 A Normally-off SiC-JFET High Temperature Digital and Analogue Integrated Circuits in Silicon Carbide Vertical Channel Silicon Carbide JFETs Based Operational Amplifiers Silicon Carbide Multilevel Converters for Grid-Connected PV Applications A Compact Switching Power Supply Utilizing SiC-JFET for an Induction Synchrotron 40 kW/L High Switching Frequency Three-Phase AC 400 V All-SiC Inverter On the Assessment of Temperature Dependence of 10 - 20 kV 4H-SiC IGBTs Using TCAD A Simplified Model for SiC Power Diode Modules for Implementation in Spice Based Simulators An Experimental Study on Compact Equivalent Circuit Modeling of SiC Schottky Barrier Didoes Modeling of the Impact of Parameter Spread on the Switching Performance of Parallel-Connected SiC VJFETs Compact Modeling of the Punch-Through Effect in SiC-IGBT for 6.6kV Switching Operation with Improved Performance Simulation of TEDREC Phenomena for 4H-SiC Pin Diode with p/n Type Drift Layer The Impact of the Surface Treatments on the Properties of Gan/3C-SiC/Si Based Schottky Barrier Diodes AlGaN/GaN Based HEMTs on SiC/Si-Substrates: Influences on High Frequency Performance SiC/Si Pseudosubstrates for AlGaN Nanoelectronic Devices 1 MHz Resonant DC/DC-Converter Using 600 V Gallium Nitride (GaN) Power Transistors

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詳細情報

• NII書誌ID(NCID): BB14582936
• ISBN:
  • 9783037856246
• 出版国コード: sz
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: Durnten-Zurich
• ページ数/冊数: xxiii, 1149 p.
• 大きさ: 25 cm
• 件名:
  • LCSH : Silicon carbide -- Congresses
  • LCSH : Silicon carbide -- Electric properties -- Congresses
• 親書誌ID:
  • BA00294222