Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation
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書誌事項
Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation
（Materials science forum, v. 740-742）
Trans Tech Publications, c2013
- タイトル別名
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ECSCRM 2012 : Saint-Petersburg Russia
大学図書館所蔵 全1件
注記
Includes bibliographical references and index
内容説明・目次
内容説明
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The volume on Silicon Carbide and Related Materials is divided into 10 chapters ranging from "Bulk growth" to "Device and application". The reports demonstrate the technical and scientific advances in the related areas: 150 mm 4H-SiC wafers are now commercially available, a significant improvement of the carrier lifetime (up to 35 ms) for n-type SiC epi-layers has been achieved, SiC diodes have a large market share in server and telecom power applications requiring the maximum efficiency, and a variety of 1- cm2, 15 kV class bipolar devices have been demonstrated, including PN Diodes, IGBTs and GTO. In general, the number of contributions devoted to application of SiC and related materials, GaN and solid solutions based on this material, and graphene is steadily increasing compared to the 2011 edition.
目次
Preface, Sponsors and Committees
Chapter 1: Bulk Growth
Growth of 4H-SiC in Current-Controlled Liquid Phase Epitaxy
Growth of Low Basal Plane Dislocation Density 4H-SiC Crystals in Controlled Temperature Distribution inside the Crucible
SiC Single Crystal Growth on Dual Seed with Different Surface Properties
Effect of Surface Polarity on the Conversion of Threading Dislocations in Solution Growth
Morphological and Optical Stability in Growth of Fluorescent SiC on Low Off-Axis Substrates
Growth Rate and Surface Morphology of 4H-SiC Single Crystal Grown under Various Supersaturations Using Si-C Solution
Application of 3-D X-Ray Computed Tomography for the In Situ Visualization of the SiC Crystal Growth Interface during PVT Bulk Growth
Investigation of Solution Growth of SiC by Temperature Difference Method Using Fe-Si Solvent
Real-Time Observation of High Temperature Interface between SiC Substrate and Solution during Dissolution of SiC
Polycrystalline SiC as Source Material for the Growth of Fluorescent SiC Layers
On Peculiarities of Defect Formation in 6 -SiC Bulk Single Crystals Grown by PVT Method
Absence of Back Stress Effect in the PVT Growth of 6H Silicon Carbide
Modeling of the Mass Transport during Homo-Epitaxial Growth of Silicon Carbide by Fast Sublimation Epitaxy
The Study of the Geometry and Growth Trend of Silicon Carbide Crystals
Structural Perfection of Silicon Carbide Crystals Grown on Profiled Seeds by Sublimation Method
Growth of Large Diameter 4H-SiC by TSSG Technique
SiC Sublimation Growth at Small Spacing between Source and Seed
High-Speed Growth of 4H-SiC Single Crystal Using Si-Cr Based Melt
The Effect of Modified Crucible Design and Seed Attachment on SiC Crystal Grown by PVT
Sublimation Growth of AlN and GaN Bulk Crystals on SiC Seeds
Growth of Low-Defect SiC and AlN Crystals in Refractory Metal Crucibles
Defect Generation Mechanisms in PVT-Grown AlN Single Crystal Boules
Sublimation Growth of Bulk AlN Crystals on SiC Seeds
Growth of (0001) AlN Single Crystals Using Carbon-Face SiC as Seeds
AlGaN Solid Solution Grown on 3C-SiC(111)/Si(111) Pseudosubstrates
Effect of a Gas Pressure on the Growth Rate of AlN Layer
Chapter 2: Graphen Growth and Characterization
Impact of Substrate Steps and of Monolayer-Bilayer Junctions on the Electronic Transport in Epitaxial Graphene on 4H-SiC (0001)
X-Ray Diffraction and Raman Spectroscopy Study of Strain in Graphene Films Grown on 6H-SiC(0001) Using Propane-Hydrogen-Argon CVD
Optimising the Growth of Few-Layer Graphene on Silicon Carbide by Nickel Silicidation
Raman Spectroscopy and XPS Analysis of Epitaxial Graphene Grown on 4H-SiC (0001) Substrate under an Argon Pressure of 900 mbar Environment
A DC Comparison Study between H-Intercalated and Native Epi-Graphenes on SiC Substrates
Graphene-on-Porous-Silicon Carbide Structures
Low-Temperature Transport Properties of Graphene and Multilayer Graphene on 6H-SiC
Energy Gaps Induced by a Semiconducting Substrate in the Epitaxial Graphene Density of States
High Temperature Stability of Oxygen Functionalized Epitaxial Graphene/Metal Contact Interfaces
Silicon Nitride as Top Gate Dielectric for Epitaxial Graphene
Thickness Uniformity and Electron Doping in Epitaxial Graphene on SiC
Surface Evolution of 4H-SiC(0001) during In Situ Surface Preparation and its Influence on Graphene Properties
Study of Carbonization Process on Surface of Si Substrate in High Vacuum Region with Hydrocarbon Gas
Chapter 3: Epitaxial Growth 4H SiC
Fast Growth Rate Epitaxy by Chloride Precursors
On-Axis Homoepitaxial Growth of 4H-SiC PiN Structure for High Power Applications
Study of the Nucleation of p-Doped SiC in Selective Epitaxial Growth Using VLS Transport
Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition
Step-Flow Growth of Fluorescent 4H-SiC Layers on 4 Degree Off-Axis Substrates
Reduction of Threading Screw Dislocation Utilizing Defect Conversion during Solution Growth of 4H-SiC
The Growth of 3-Inch 4H-SiC Si-Face Epitaxial Wafer with Vicinal Off-Angle
Step-Bunching Free and 30 m-Thick SiC Epitaxial Layer Growth on 150 mm SiC Substrate
Step Instability in Sublimation Epitaxy on Low Off-Axis 6H-SiC
Role of Cl/Si Ratio in the Low-Temperature Chloro-Carbon Epitaxial Growth of SiC
Vapor-Phase Catalyst Delivery Method for Growing SiC Nanowires
Simulation of Gas-Phase Chemistry for Selected Carbon Precursors in Epitaxial Growth of SiC
The Nucleation and Propagation of Threading Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC
Uniformity and Morphology of 10 x 100mm 4 Degrees Off-Axis 4H-SiC Epitaxial Layers and their Effect on Device Performance
Surface Preparation of 4 Degrees Off-Axis 4H-SiC Substrate for Epitaxial Growth
Study of the Effects of Growth Rate, Miscut Direction and Postgrowth Argon Annealing on the Surface Morphology of Homoepitaxially Grown 4H Silicon Carbide Films
Amorphous Silicon Carbide Film Formation at Room Temperature by Monomethylsilane Gas
10 x 100 mm 4H-SiC Epitaxial Growth by Warm-Wall Planetary Reactor
Defect Revelation and Evaluation of 4H Silicon Carbide by Optimized Molten KOH Etching Method
Low Temperature Homoepitaxial Growth of 4H-SiC on 4 Degrees Off-Axis Carbon-Face Substrate Using BTMSM Source
Morphology Optimization of Very Thick 4H-SiC Epitaxial Layers
Chapter 4: Epitaxial Growth 3C SiC
3C-SiC Heteroepitaxy on Hexagonal SiC Substrates
3C-SiC Growth on (001) Si Substrates by Using a Multilayer Buffer
Heteroepitaxial Growth of 3C-SiC on Polar Faces of 6H-SiC Substrates, TEM Investigations
Innovative 3C-SiC on SiC via Direct Wafer Bonding
Towards Bulk-Like 3C-SiC Growth Using Low Off-Axis Substrates
Color Chart for Thin SiC Films Grown on Si Substrates
Defect Generation and Annihilation in 3C-SiC-(001) Homoepitaxial Growth by Sublimation
Plasma Treatment of 3C-SiC Surfaces
Structural Characterization of 3C-SiC Grown Using Methyltrichlorosilane
Monte Carlo Study of the Hetero-Polytypical Growth of Cubic on Hexagonal Silicon Carbide Polytypes
Post-Growth Process Effect on Hetero-Epitaxial 3C-SiC Wafer Bow and Residual Stress
Elaboration of Core Si/Shell SiC Nanowires
Bulk 3C-SiC Crystal by Top Seeded Solution Growth Method
Microsecond Carrier Lifetimes in Bulk-Like 3C-SiC Grown by Sublimation Epitaxy
Structural Investigation of Heteroepitaxial 3C-SiC Grown on 4H-SiC Substrates
Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors
High-Rate Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate for Qualified Epitaxial Graphene on Silicon
p-Doped SiC Growth on Diamond Substrate by VLS Transport
Polytype Inclusions in Cubic Silicon Carbide
Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate Using Monomethylsilane-Based Gas-Source Molecular-Beam Epitaxy
Chapter 5: Characterization of Material and Point Defects
Photoluminescence of 8H-SiC
P-6H-SiC Conductivity Compensation after Irradiation of 8MeV Protons
Raman Investigation of Aluminum-Doped 4H-SiC
An EPR Study of Defects in Neutron-Irradiated Cubic SiC Crystals
An Extended EDMR Setup for SiC Defect Characterization
Comparative Analysis of Defect Formation in Silicon Carbide under Electron and Proton Irradiation
Deep Levels in P-Type 4H-SiC Induced by Low-Energy Electron Irradiation
Determination of the Electrical Capture Process of the EH6-Center in n-Type 4H-SiC
Diffusion Study of Chlorine in SiC by First Principles Calculations
Electron Paramagnetic Resonance Studies of Nb in 6H-SiC
EPR Study of the Nitrogen Containing Defect Center Created in Self-Assembled 6H SiC Nanostructure
Kinetic Monte Carlo Simulation of Impurity Effects on Nucleation and Growth of SiC Clusters on Si(100)
Lateral Boron Distribution in Polycrystalline SiC Source Materials
Optical Characterization of Compensating Defects in Cubic SiC
Optical Properties of the Niobium Centre in 4H, 6H, and 15R SiC
Origins of Negative Fixed Charge in Wet Oxidation for SiC
Persistent Photoconductivity in p-Type 4H-SiC Bulk Crystals
Photoluminescence Spectroscopy of Neutron-Irradiated Cubic SiC Crystals
Photoluminescence Topography of Fluorescent SiC and its Corresponding Source Crystals
Point Defects in SiC as a Promising Basis for Single-Defect, Single-Photon Spectroscopy with Room Temperature Controllable Quantum States
Study on the Correlation between Film Composition and Piezoresistive Properties of PECVD SixCy Thin Films
Subsurface Atomic Structure of 4H-SiC (0001) Finished by Plasma-Assisted Polishing
Superhyperfine Interactions of the Nitrogen Donors in 4H SiC Studied by Pulsed ENDOR and TRIPLE ENDOR Spectroscopy
Temperature Dependence of Raman Scattering in 4H-SiC
The Formation of New Periodicities after N-Implantation in 4H- and 6H-SiC Samples
The Integrated Evaluation Platform for SiC Wafers and Epitaxial Films
Theoretical Study of N Incorporation Effect during SiC Oxidation
To the Experimental Determination of the Spontaneous Polarization for the Silicon Carbide Polytypes
Chapter 6: Interface Characterization
A Comparison of Free Carrier Absorption and Capacitance Voltage Methods for Interface Trap Measurements
A New-Type of Defect Generation at a 4H-SiC/SiO2 Interface by Oxidation Induced Compressive Strain
Characterization of the Metal-Semiconductor Interface of Pt-GaN Diode Hydrogen Sensors
Deep-Level-Transient Spectroscopy Characterization of Mobility-Limiting Traps in SiO2/SiC Interfaces on C-Face 4H-SiC
Dislocation Analysis of 4H-/6H-SiC Single Crystals Using Micro-Raman Spectroscopy
Effect of Interface Native Oxide Layer on the Properties of Annealed Ni/SiC Contacts
Effect of Surface and Interface Recombination on Carrier Lifetime in 6H-SiC Layers
Effects of Growth Parameters on SiC/SiO2 Core/Shell Nanowires Radial Structures
Electron Transport Features in Heterostructures 3C-SiC(n)/Si(p) at the Elevated Temperatures
Impact of AlN Spacer on Electron Mobility of AlGaN/AlN/GaN Structures on Silicon
Improvement of Interface State and Channel Mobility Using 4H-SiC (0-33-8) Face
Study of Terminated Species on 4H-SiC (0001) Surfaces Planarized by Catalyst-Referred Etching
XPS Analysis of 4H-SiC Surfaces Oxidized by Helium-Based Atmospheric-Pressure Water Vapor Plasma for Plasma-Assisted Polishing
Chapter 7: Electrical and Structural Characterization
Electrical Impact of the Aluminum P-Implant Annealing on Lateral MOSFET Transistors on 4H-SiC N-Epi
Hall Effect Characterization of 4H-SiC MOSFETs: Influence of Nitrogen Channel Implantation
Interface Defects and Negative Bias Temperature Instabilities in 4H-SiC PMOSFETs - A Combined DCIV/SDR Study
Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-Channel Mosfets
Correlation of Interface Characteristics to Electron Mobility in Channel-Implanted 4H-SiC Mosfets
Characterization of POCl3-Annealed 4H-Sic Mosfets by Charge Pumping Technique
Evaluation of PBTS and NBTS in SiC MOS Using In Situ Charge Pumping Measurements
A Study of High Temperature DC and AC Gate Stressing on the Performance and Reliability of Power SiC MOSFETs
Gate Oxide Stability of 4H-SiC MOSFETs under On/Off-State Bias-Temperature Stress
Evidence of Tunneling in n-4H-SiC/SiO2 Capacitors at Low Temperatures
Boron Diffusion in Silicon Carbide
Recombination and Excess Currents in 4H-SiC Structure with Low-Doped n-Region
Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure
3C-, 4H- and 6H-SiC Bulks Studied by Silicon K-Edge X-Ray Absorption
A Possible Mechanism for Hexagonal Void Movement Observed during Sublimation Growth of SiC Single Crystals
Aluminum Implantation in 4H-SiC: Physical and Electrical Properties
Characterization of (4,4)- and (5,3)-Type Stacking-Faults in 4deg.-Off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Photo-Luminescence Spectroscopy
Comparison of Etch Pit Shapes on Off-Oriented 4H-SiC Using Different Halogen Gases
Complex Study of SiC Epitaxial Films
Contact-Free Micropipe Reactions in Silicon Carbide
Conversion of Basal Plane Dislocations to Threading Edge Dislocations by Annealing 4H-SiC Epilayers at High Temperatures
Dielectric Properties of Thermally Grown SiO2 on 4H-SiC(0001) Substrates
Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes
Effects of Al Ion Implantation on 3C-SiC Crystal Structure
Electrical Characterisation of Epitaxially Grown 3C-SiC Films
Electrical Properties of MOS Structures on 4H-SiC (11-20) Face
Electrophysical and Optical Properties of 4H-SiC Irradiated with Xe Ions
Formation of Epitaxial Defects by Threading Screw Dislocations with a Morphological Feature at the Surface of 4 Off-Axis 4H-SiC Substrates
Influence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiC
Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers
Introducing Color Centers to Silicon Carbide Nanocrystals for In Vivo Biomarker Applications: A First Principles Study
Laplace Transform Deep Level Transient Spectroscopy Study of the EH6/7 Center
Origin Analyses of Obtuse Triangular Defects in 4deg.-Off 4H-SiC Epitaxial Wafers by Electron Microscopy and by Synchrotron X-Ray Topography
Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers
Piezoresistivity and Electrical Conductivity of SiC Thin Films Deposited by High Temperature PECVD
Radiation Defects Produced in 4H-SiC Epilayers by Proton and Alpha-Particle Irradiation
Reliability Investigation of Drain Contact Metallizations for SiC-MOSFETs
Stability Investigation of High Heat-Resistant Resin under High Temperature for Ultra-High Blocking Voltage SiC Devices
Stress Relaxation Study in 3C-SiC Microstructures by Micro-Raman Analysis and Finite Element Modeling
Study of Surface Defects in 4H-SiC Schottky Diodes Using a Scanning Kelvin Probe
Chapter 8: MOS Processing
4H-SiC Trench MOSFET with Thick Bottom Oxide
An Improvement of Trench Profile of 4H-SiC Trench MOS Barrier Schottky (TMBS) Rectifier
Characterization of Diverse Gate Oxides on 4H-SiC 3D Trench-MOS Structures
Effect of Interfacial Localization of Phosphorus on Electrical Properties and Reliability of 4H-SiC MOS Devices
A Nanoscale Look in the Channel of 4H-SiC Lateral MOSFETs
Influence of Post-Implantation Annealing Temperature on MOSFET Performance and Oxide Reliability
Investigation of Nitrided Atomic-Layer-Deposited Oxides in 4H-SiC Capacitors and MOSFETs
Simulation and Optimization of 4H-SiC DMOSFET Power Transistors
Effects of a Post-Oxidation Annealing in Nitrous Oxide on the Morphological and Electrical Properties of SiO2/4H-SiC Interfaces
Effects of a Post-Oxidation Annealing in Nitrous Oxide on the Morphological and Electrical Properties of SiO2/4H-SiC Interfaces
Effect of NH3 Post-Oxidation Annealing on Flatness of SiO2/SiC Interface
Improved Stability of 4H-SiC MOS Device Properties by Combination of NO and POCl3 Annealing
Influence of Nitrogen Implantation on Electrical Properties of Al/SiO2/4H-SiC MOS Structure
Effect of Suppressing Reoxidation at SiO2/SiC Interface during Post-Oxidation Annealing in N2O with Al2O3 Capping Layer
Novel Approach for Improving Interface Quality of 4H-SiC MOS Devices with UV Irradiation and Subsequent Thermal Annealing
Relation between Defects on 4H-SiC Epitaxial Surface and Gate Oxide Reliability
Sodium Enhanced Oxidation: Absence of Shallow Interface Traps after Removal of Sodium Ions from the SiO2/4H-SiC Interface
The Influence of Post-Oxidation Annealing Process in O2 and N2O on the Quality of Al/SiO2/n-Type 4H-SiC MOS Interface
Efficient Characterization of Threshold Voltage Instabilities in SiC nMOSFETs Using the Concept of Capture-Emission-Time Maps
Transition Metal Oxide-Diamond Interfaces for Electron Emission Applications
Chapter 9: Processing Diverse
Al+ Implanted 4H-SiC: Improved Electrical Activation and Ohmic Contacts
Alloying of Ohmic Contacts to n-Type 4H-SiC via Laser Irradiation
Potentialities of Nickel Oxide as Dielectric for GaN and SiC Devices
4H-SiC Trench Schottky Diodes for Next Generation Products
Development of SiC Super-Junction (SJ) Device by Deep Trench-Filling Epitaxial Growth
Effect of Damage Removal Treatment after Trench Etching on the Reliability of Trench MOSFET
Filling of Deep Trench by Epitaxial SiC Growth
Ni, NiSi2 and Si Secondary Ohmic Contacts on SiC with High Thermal Stability
Optimization of Copper Top-Side Metallization for High Performance SiC-Devices
Preparation and Characterization of Deposited Tetraethylorthosilicate-SiO2/SiC MIS Structure
Process Variation Tolerant 4H-SiC Power Devices Utilizing Trench Structures
Basic Experiment on Atmospheric-Pressure Plasma Etching with Slit Aperture for High-Efficiency Dicing of SiC Wafer
Comparative Study on Dry Etching of - and -SiC Nano-Pillars
First Experimental Functionalization Results of SiC Nanopillars for Biosensing Applications
ICP Etching of 4H-SiC Substrates
Large-Area Mapping of Dislocations in 4H-SiC from Carbon-Face (000-1) by Using Vaporized KOH Etching near 1000 DegreesC
Model Calculations of SiC Oxide Growth Rates at Sub-Atmospheric Pressures Using the Si and C Emission Model
Influence of Contact Metallisation on the High Temperature Characteristics of High- Dielectrics
Multi-Wire Electrical Discharge Slicing for Silicon Carbide
Slicing of Rotating SiC Ingot by Electric Discharge Machining
Study on Reactive Species in Catalyst-Referred Etching of 4H-SiC using Platinum and Hydrofluoric Acid
Pressureless Silver Sintering Die-Attach for SiC Power Devices
Process Tolerant Single Photolithography/Implantation 120-Zone Junction Termination Extension
Solar-to-Hydrogen Conversion Efficiency of Water Photolysis with Epitaxially Grown p-Type SiC
Chapter 10: Device and Application
Subnanosecond Semiconductor Opening Switch Based on 4H-SiC Junction Diode
SiC High Power Devices - Challenges for Assembly and Thermal Management
Remarkable Increase in Surge Current Capability of SiC Schottky Diodes Using Press Pack Contacts
Reverse Leakage Currents in High-Voltage 4H-SiC Schottky Diodes
Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes
Comparative Study of n-LIGBT and n-LDMOS Structures on 4H-SiC
Charge Pumping Analysis of Monolithically Fabricated 4H-SiC CMOS Structures
16 kV, 1 cm2, 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications
SXRT Investigations on Electrically Stressed 4H-SiC PiN Diodes for 6.5 kV
Influence of in-Grown Stacking Faults on Electrical Characteristics of 4H-SiC Pin Diode with Long Carrier Lifetime
Development of High-Voltage 4H-SiC PiN Diodes on 4 Degrees and 8 Degrees Off-Axis Substrates
Electrical Characterization of PiN Diodes with p+ Layer Selectively Grown by VLS Transport
900V, 1.46mOhm-cm2 4H-SiC Depletion Mode Vertical JFET
Reliable Operation of SiC Junction-Field-Effect-Transistor Subjected to over 2 Million 600-V Hard Switch Stressing Events
A 69-m 600-V-Class Hybrid JFET
Thermal Runaway Robustness of SiC VJFETs
Reliability Evaluation of 4H-SiC JFETs Using I-V Characteristics and Low Frequency Noise
Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET
Steady-State Analysis of a Normally-Off 4H-SiC Trench Bipolar-Mode FET
Evaluation of the Drive Circuit for a Dual Gate Trench SiC JFET
On-State and Switching Performance Comparison of A 600 V-Class Hybrid SiC JFET and Si Superjunction MOSFETs
15 kV IGBTs in 4H-SiC
Fabrication of a P-Channel SiC-IGBT with High Channel Mobility
Experimental Study of Short-Circuit Capability of Normally-off SiC-BGSITs
High-Temperature Characterization of 4H-SiC Darlington Transistors for Low Voltage Applications
1200 V, 3.3 m SiC Bipolar Junction Transistor Power Modules
Area-Optimized JTE for 4.5 kV Non Ion-Implanted 4H-SiC BJT
15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off Thyristors
Development of High-Voltage 4H-SiC GTOs for Grid-Tied Solar Inverters
Pulse Current Characterization of SiC GTO Thyristors with Etched JTE
Optical Triggering of 12 kV 1 cm2 4H-SiC Thyristors
Optimization of Holding Current in 4H-SiC Thyristors
Micromechanics Based on Silicon Carbide
High Temperature SiC Sensor with an Isolated Package
Bipolar Conduction across a Wafer Bonded p-n Si/SiC Heterojunction
Superfast Drift Step Recovery Diodes (DSRDs) and Vacuum Field Emission Diodes Based on 4H-SiC
Selective 4H-SiC UV Detectors
Full Simulation Study of UV Photodetectors Based on Pn Junctions in Silicon Carbide
Fabrication of Broadband Antireflective Sub-Wavelength Structures on Fluorescent SiC
Properties of Graphene Side Gate Transistors
Investigation of Die Attach for SiC Power Device for 300 DegreesC Applications
Insulating Properties of Package for Ultrahigh-Voltage, High-Temperature Devices
Power Module Package Structure Capable of Surviving Greater Tj Thermal Cycles
Electromagnetic Interference in Silicon Carbide DC-DC Converters
4H-SiC Digital Logic Circuitry Based on P+ Implanted Isolation Walls MESFET Technology
Complementary JFET Logic for Low-Power Applications in Extreme Environments
PWM Power Supply Using SiC RESURF JFETs with High Speed Switching
High-Speed Drive Circuit with Separate Source Terminal for 600 V / 40 A Normally-off SiC-JFET
High Temperature Digital and Analogue Integrated Circuits in Silicon Carbide
Vertical Channel Silicon Carbide JFETs Based Operational Amplifiers
Silicon Carbide Multilevel Converters for Grid-Connected PV Applications
A Compact Switching Power Supply Utilizing SiC-JFET for an Induction Synchrotron
40 kW/L High Switching Frequency Three-Phase AC 400 V All-SiC Inverter
On the Assessment of Temperature Dependence of 10 - 20 kV 4H-SiC IGBTs Using TCAD
A Simplified Model for SiC Power Diode Modules for Implementation in Spice Based Simulators
An Experimental Study on Compact Equivalent Circuit Modeling of SiC Schottky Barrier Didoes
Modeling of the Impact of Parameter Spread on the Switching Performance of Parallel-Connected SiC VJFETs
Compact Modeling of the Punch-Through Effect in SiC-IGBT for 6.6kV Switching Operation with Improved Performance
Simulation of TEDREC Phenomena for 4H-SiC Pin Diode with p/n Type Drift Layer
The Impact of the Surface Treatments on the Properties of Gan/3C-SiC/Si Based Schottky Barrier Diodes
AlGaN/GaN Based HEMTs on SiC/Si-Substrates: Influences on High Frequency Performance
SiC/Si Pseudosubstrates for AlGaN Nanoelectronic Devices
1 MHz Resonant DC/DC-Converter Using 600 V Gallium Nitride (GaN) Power Transistors
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