Molecular beam epitaxy : from research to mass production

著者

書誌事項

Molecular beam epitaxy : from research to mass production

edited by Mohamed Henini

Elsevier, c2013

  • : hardback

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注記

Includes bibliographical references and index

内容説明・目次

内容説明

This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a 'how to' on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum. MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype device structures and more at the advanced research stage). MBE is important because it enables new device phenomena and facilitates the production of multiple layered structures with extremely fine dimensional and compositional control. The techniques can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. This book covers the advances made by MBE both in research and mass production of electronic and optoelectronic devices. It includes new semiconductor materials, new device structures which are commercially available, and many more which are at the advanced research stage.

目次

1. Molecular Beam Epitaxy: Fundamentals, Historical Background and Future Prospects 2. Molecular Beam Epitaxy in the Ultra-Vacuum of Space: Present and Near Future 3. Growth of Semiconductor Nanowires by Molecular Beam Epitaxy 4. Droplet Epitaxy of Nanostructures 5. Self-assembled Quantum Dots 6. Migration Enhanced Epitaxy of Low Dimensional Structures 7. Surfactant-modified Epitaxy 8. MBE Growth of High Mobility 2DEG 9. MBE of GaAsBi 10. Molecular Beam Epitaxy of GaAsBi and Related Quaternary Alloys 11. MBE of Dilute Nitride Optoelectronic Devices 12. The Effects of Antimony During MBE Growth 13. Nonpolar Cubic III Nitrides: From the Basics of Growth to Device Applications 14. In-rich InGaN 15. Molecular Beam Epitaxy of IV-VI Compounds: Heterostructures/Superlattices/Devices 16. Epitaxial Growth f Thin Films And Quantum Structures of II-VI Visible-Band Gap Semiconductors 17. MBE of Semiconducting Oxides 18. ZnO Materials and Devices grown by MBE 19. MBE of Complex Oxides 20. Epitaxial Systems Combining Oxides and Semiconductors 21. MBE Growth of As and Sb based Ferromagnetic III-V Semiconductor 22. Epitaxial Magnetic Layers Grown by MBE : Model Systems to Study the Physics in Nanomagnetism and Spintronic 23. Atomic Layer-by-Layer Molecular Beam Epitaxy of Superconducting and Magnetic Materials 24. MBE of Semimagnetic Quantum Dots 25. MBE Growth of Graphene 26. Growth and Characterization of Fullerene/GaAs Interfaces and C60 Doped GaAs and AlGaAs layers 27. Molecular Beam Epitaxial Growth and Exotic Electronic Structure of Topological Insulators 28. Thin Films of Organic Molecules: Interfaces and Epitaxial Growth 29. MBE of II-VI Lasers 30. MBE Growth of Terahertz Quantum Cascade Lasers 31. MBE as a Mass Production Technique 32. Mass production of optoelectronic devices: LEDs, lasers, VCSELs 33. Mass Production of Sensors Grown by MBE

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