High permittivity gate dielectric materials
Author(s)
Bibliographic Information
High permittivity gate dielectric materials
(Advanced microelectronics, v. 43)
Springer, c2013
Available at 2 libraries
  Aomori
  Iwate
  Miyagi
  Akita
  Yamagata
  Fukushima
  Ibaraki
  Tochigi
  Gunma
  Saitama
  Chiba
  Tokyo
  Kanagawa
  Niigata
  Toyama
  Ishikawa
  Fukui
  Yamanashi
  Nagano
  Gifu
  Shizuoka
  Aichi
  Mie
  Shiga
  Kyoto
  Osaka
  Hyogo
  Nara
  Wakayama
  Tottori
  Shimane
  Okayama
  Hiroshima
  Yamaguchi
  Tokushima
  Kagawa
  Ehime
  Kochi
  Fukuoka
  Saga
  Nagasaki
  Kumamoto
  Oita
  Miyazaki
  Kagoshima
  Okinawa
  Korea
  China
  Thailand
  United Kingdom
  Germany
  Switzerland
  France
  Belgium
  Netherlands
  Sweden
  Norway
  United States of America
Note
Includes bibliographical references and index
Description and Table of Contents
Description
"The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects."
.
Table of Contents
Historical Perspectives.- High Mobility Channels.- Non-Volatile Memory.- Hafnium-Based Gate Dielectric Materials.- Lanthanum-Based High-K Gate Dielectric Materials.- Crystalline High-K Gate Dielectric Materials.- High-K Gate Dielectric Processing.- Metal Gate Electrodes.- Flat-Band/Threshold Voltage Control.- Interfaces and Defects.- Electrical Characterization and Parameter Extraction.- Non-Contact Metrology of High-K Gate Dielectrics.- Channel Mobility.- High-K Gate Dielectric Reliability Issues.- Bias Temperature Instability.- Integration Issues.
by "Nielsen BookData"