CMOS analog circuit design

著者

書誌事項

CMOS analog circuit design

Phillip E. Allen, Douglas R. Holberg

Oxford University Press, 2012

International 3rd ed

  • : pbk

大学図書館所蔵 件 / 全3件

この図書・雑誌をさがす

注記

Previous ed.: 2002

Includes bibliographical references and index

内容説明・目次

内容説明

Respected authors Phil Allen and Doug Holberg bring you the international third edition of their popular textbook, CMOS Analog Circuit Design. Working from the forefront of CMOS technology, Phil and Doug have combined their expertise as engineers and academics to present a cutting-edge and effective overview of the principles and techniques for designing circuits. Their two main goals are: to mix the academic and practical viewpoints in a treatment that is neither superficial nor overly detailed, and to teach analog integrated circuit design with a hierarchically organized approach. Most of the circuits, techniques, and principles presented in CMOS Analog Circuit Design come directly from the authors' industrial experience, making the book a valuable resource for both practicing engineers and students taking courses in analog electronics or CMOS analog design. The trademark approach of Phil and Doug's textbook is its design recipes, which take readers step-by-step through the creation of real circuits, explaining and demystifying complex design problems. The book provides detailed coverage of often-neglected areas and deliberately leaves out bipolar analog circuits, since CMOS is the dominant technology for analog integrated circuit design. The book is appropriate for advanced undergraduates and graduate students with background knowledge in basic electronics - including biasing, modeling, circuit, analysis, and frequency response. CMOS Analog Circuit Design, International Third Edition, presents a complete picture of design (including modeling, simulation, and testing) and enables readers to undertake the design of an analog circuit that can be implemented by CMOS technology.

目次

  • 1.1 ANALOG INTEGRATED CIRCUIT DESIGN
  • 1.2 NOTATION, SYMBOLOGY AND TERMINOLOGY
  • 1.3 ANALOG SIGNAL PROCESSING
  • 1.4 EXAMPLE OF ANALOG VLSI MIXED-SIGNAL CIRCUIT DESIGN
  • 2.1 BASIC MOS SEMICONDUCTOR FABRICATION PROCESSES
  • 2.2 THE PN JUNCTION
  • 2.3 THE MOS TRANSISTOR
  • 2.4 PASSIVE COMPONENTS
  • 2.5 OTHER CONSIDERATIONS OF CMOS TECHNOLOGY
  • 3.1 SIMPLE MOS LARGE-SIGNAL MODEL (SPICE LEVEL 1)
  • 3.2 OTHER MOS LARGE-SIGNAL MODEL PARAMETERS
  • 3.3 SMALL-SIGNAL MODEL FOR THE MOS TRANSISTOR
  • 3.4 COMPUTER SIMULATION MODELS
  • 3.5 SUBTHRESHOLD MOS MODEL
  • 3.6 SPICE SIMULATION OF MOS CIRCUITS
  • 4.1 MOS SWITCH
  • 4.2 MOS DIODE/ACTIVE RESISTOR
  • 4.3 CURRENT SINKS AND SOURCES
  • 4.4 CURRENT MIRRORS
  • 4.5 CURRENT AND VOLTAGE REFERENCES
  • 4.6 BANDGAP REFERENCE
  • 5.1 INVERTERS
  • 5.2 DIFFERENTIAL AMPLIFIERS
  • 5.3 CASCODE AMPLIFIERS
  • 5.4* CURRENT AMPLIFIERS
  • 5.5* OUTPUT AMPLIFIERS/BUFFERS
  • 6.1 DESIGN OF CMOS OP AMPS
  • 6.2 COMPENSATION OF OP AMP
  • 6.3 DESIGN OF TWO-STAGE OP AMPS
  • 6.4 POWER-SUPPLY REJECTION RATIO OF TWO-STAGE OP AMPS
  • 6.5 CASCODE OP AMPS
  • 6.6 SIMULATION AND MEASUREMENT OF OP AMPS
  • 6.7 MACROMODELS FOR OP AMPS
  • 7.1 BUFFERED OP AMPS
  • 7.2 HIGH-SPEED/FREQUENCY OP AMPS
  • 7.3 DIFFERENTIAL-OUTPUT OP AMPS
  • 7.4 MICROPOWER OP AMPS
  • 7.5 LOW NOISE OP AMPS
  • 7.6 LOW VOLTAGE OP AMPS
  • 8.1 CHARACTERIZATION OF A COMPARATOR
  • 8.2 TWO-STAGE, OPEN-LOOP COMPARATOR DESIGN
  • 8.3 OTHER OPEN-LOOP COMPARATORS
  • 8.4 IMPROVING THE PERFORMANCE OF OPEN-LOOP COMPARATORS
  • 8.5 DISCRETE-TIME COMPARATORS
  • 8.6 HIGH-SPEED COMPARATORS
  • APPENDIX A CIRCUIT ANALYSIS FOR ANALOG CIRCUIT DESIGN
  • APPENDIX B INTEGRATED CIRCUIT LAYOUT
  • APPENDIX C CMOS DEVICE CHARACTERIZATION
  • APPENDIX D TIME AND FREQUENCY DOMAIN RELATIONSHIP FOR SECOND-ORDER SYSTEMS

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