Graphene : properties, preparation, characterisation and devices

著者

    • Skákalová, Viera
    • Kaiser, Alan B.

書誌事項

Graphene : properties, preparation, characterisation and devices

edited by Viera Skákalová and Alan B. Kaiser

(Woodhead Publishing series in electronic and optical materials, 57)

Woodhead Publishing, c2014

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注記

Includes bibliographical references and index

内容説明・目次

内容説明

Graphene: Properties, Preparation, Characterisation and Devices reviews the preparation and properties of this exciting material. Graphene is a single-atom-thick sheet of carbon with properties, such as the ability to conduct light and electrons, which could make it potentially suitable for a variety of devices and applications, including electronics, sensors, and photonics. Chapters in part one explore the preparation of , including epitaxial growth of graphene on silicon carbide, chemical vapor deposition (CVD) growth of graphene films, chemically derived graphene, and graphene produced by electrochemical exfoliation. Part two focuses on the characterization of graphene using techniques including transmission electron microscopy (TEM), scanning tunneling microscopy (STM), and Raman spectroscopy. These chapters also discuss photoemission of low dimensional carbon systems. Finally, chapters in part three discuss electronic transport properties of graphene and graphene devices. This part highlights electronic transport in bilayer graphene, single charge transport, and the effect of adsorbents on electronic transport in graphene. It also explores graphene spintronics and nano-electro-mechanics (NEMS). Graphene is a comprehensive resource for academics, materials scientists, and electrical engineers working in the microelectronics and optoelectronics industries.

目次

Contributor contact details Woodhead Publishing Series in Electronic and Optical Materials Preface Part I: Preparation of graphene 1. Epitaxial growth of graphene on silicon carbide (SiC) Abstract: 1.1 Introduction 1.2 Ultrahigh vacuum (UHV) thermal decomposition of single-crystal SiC 1.3 Thermal decomposition of single-crystal SiC under ambient pressure conditions 1.4 Thermal decomposition of single-crystal SiC thin films and polycrystalline SiC substrates 1.5 Epitaxial graphene formed by intercalation 1.6 Conclusion 1.7 Acknowledgements 1.8 References 2. Chemical vapor deposition (CVD) growth of graphene films Abstract: 2.1 Introduction 2.2 Chemical vapor deposition (CVD) on nickel 2.3 Graphene with large domain sizes on copper 2.4 Growth on copper single crystals 2.5 Periodically stacked multilayers 2.6 Isotope labeling of CVD graphene 2.7 Conclusion 2.8 Acknowledgment 2.9 References 3. Chemically derived graphene Abstract: 3.1 Introduction 3.2 Synthesis of graphene oxide (GO) 3.3 Reduction of graphene oxide (GO) 3.4 Physicochemical structure of graphene oxide (GO) 3.5 Electrical transport in graphene oxide (GO) 3.6 Applications of graphene oxide/reduced graphene oxide (GO/RGO) 3.7 Conclusion 3.8 Acknowledgements 3.9 References 4. Graphene produced by electrochemical exfoliation Abstract: 4.1 Introduction 4.2 Synthesis of graphene by electrochemical exfoliation: a basic concept 4.3 Applications of graphene and graphene-based materials 4.4 Conclusion 4.5 Acknowledgments 4.6 References Part II: Characterisation of graphene 5. Transmission electron microscopy (TEM) of graphene Abstract: 5.1 Introduction 5.2 Graphene structure basics 5.3 Electron diffraction analysis of graphene 5.4 Graphene and defects in graphene observed by aberration-corrected transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) 5.5 Insights from electron microscopic studies of graphene 5.6 Conclusion 5.7 References 6. Scanning tunneling microscopy (STM) of graphene Abstract: 6.1 Introduction 6.2 Morphology, perfection and electronic structure of graphene flakes deposited on inert substrates 6.3 Morphology, perfection and electronic structure of graphene epitaxially grown on semiconductor and metallic substrates 6.4 Scanning tunneling microscopy (STM)/scanning tunneling spectroscopy (STS) of point defects 6.5 STM/STS on graphene nanoribbons (GNR) 6.6 Conclusion 6.7 References 7. Raman spectroscopy of graphene Abstract: 7.1 Introduction 7.2 Principles of Raman scattering 7.3 Phonons in graphene 7.4 Electronic structure of graphene 7.5 Raman spectrum of graphene 7.6 Conclusion 7.7 Acknowledgement 7.8 References 8. Photoemission of low-dimensional carbon systems Abstract: 8.1 Introduction 8.2 Photoemission spectroscopy 8.3 Accessing the electronic properties of carbon sp2 hybridized systems: the C1s core level 8.4 Chemical state identification: inspection of bonding environments 8.5 Valence-band electronic structure 8.6 Conclusion 8.7 Acknowledgements 8.8 References Part III: Electronic transport properties of graphene and graphene devices 9. Electronic transport in graphene: towards high mobility Abstract: 9.1 Introduction 9.2 Metrics for scattering strength 9.3 Methods of graphene synthesis 9.4 Sources of scattering in graphene 9.5 Approaches to increase carrier mobility 9.6 Physical phenomena in high-mobility graphene 9.7 Conclusion 9.8 Acknowledgments 9.9 References 10. Electronic transport in bilayer graphene Abstract: 10.1 Introduction 10.2 Historical development of bilayer graphene 10.3 Transport properties in bilayer graphene systems 10.4 Many-body effects of transport properties in bilayer graphene 10.5 Conclusion 10.6 References 11. Effect of adsorbents on electronic transport in graphene Abstract: 11.1 Introduction 11.2 Interaction of adsorbates with graphene 11.3 Transfer-induced metal and molecule adsorptions 11.4 Influence of adsorbates on graphene field-effect transistors 11.5 Removal of polymer residues on graphene 11.6 Conclusion 11.7 References 12. Single-charge transport in graphene Abstract: 12.1 Introduction 12.2 Single-charge tunneling 12.3 Electrical properties of graphene 12.4 Single-charge tunneling in graphene 12.5 Charge localization in graphene 12.6 Conclusion 12.7 References 13. Graphene spintronics Abstract: 13.1 Introduction 13.2 Theories and important concepts 13.3 Experiments for generating pure spin current and the physical properties of pure spin current 13.4 Conclusion and future trends 13.5 References 14. Graphene nanoelectromechanics (NEMS) Abstract: 14.1 Introduction 14.2 Graphene versus silicon 14.3 Graphene mechanical attributes 14.4 Fabrication technology for graphene microelectromechanical systems (MEMS) 14.5 Graphene nanoresonators 14.6 Graphene nanomechanical sensors 14.7 Conclusion and future trends 14.8 References Index

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詳細情報

  • NII書誌ID(NCID)
    BB1544630X
  • ISBN
    • 9780857095084
  • 出版国コード
    ne
  • タイトル言語コード
    eng
  • 本文言語コード
    eng
  • 出版地
    Amsterdam ; Tokyo
  • ページ数/冊数
    xxiii, 376 p.
  • 大きさ
    25 cm
  • 分類
  • 件名
  • 親書誌ID
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