Compound semiconductor materials and devices : symposium held December 1-6, 2013, Boston, Massachusetts, U.S.A.
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Bibliographic Information
Compound semiconductor materials and devices : symposium held December 1-6, 2013, Boston, Massachusetts, U.S.A.
（Materials Research Society symposium proceedings, v. 1635）
Materials Research Society , Cambridge University Press, 2014
- : hbk.
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"... presentations made during Symposium T, 'Compound Semiconductor Materials and Devices' at the 2013 MRS Fall Meeting held December 1-6 in Boston, Massachusetts." --preface
Includes bibliographical references and indexes
Other editors: F. (Shadi) Shahedipour-Sandvik, L. Dougls Bell, Kenneth A. Jones, Andrew Clark, kenji Ohmori
Description and Table of Contents
Description
Compound semiconductors impact our lives in countless ways, with applications in photovoltaics, wireless and optical telecommunication, high-power electronics, and 'green' energy. Recent areas of progress include sensing devices in biological and chemical environments, high-efficiency power devices, and photon-counting detectors. Although these materials offer significant advantages, including bandgap tailorability, high efficiency, high-temperature operation, and radiation tolerance, much work needs to be done to realize their full potential. This symposium proceedings volume represents recent advances in compound semiconductors for electronics, detection, and processing. It brings together researchers and engineers working on both fundamental materials research and device-related materials engineering, in order to address current problems and identify next-generation applications. This selection of papers demonstrates the cross-fertilization of ideas that will drive the successful adoption of these materials for new applications.
Table of Contents
- Part I. III-Nitride Materials and Devices: 1. Reduction in gate leakage current of AlGaN/GaN HEMT by rapid thermal oxidation T. Sreenidhi, A. Azizur Rahman, Arnab Bhattacharya, Amitava DasGupta and Nandita DasGupta
- 2. High resistivity isolation for AlGaN/GaN HEMT using Al double-implantation Andrzej Taube, Maciej Kozubal, Jakub Kaczmarski, Marcin Juchniewicz, Adam Barcz, Jan Dyczewski, Rafal Jakiela, Elzbieta Dynowska, Michal Adam Borysiewicz, Pawel Prystawko, Jakub Jasinski, Pawel Borowicz, Eliana Kaminska and Anna Piotrowska
- 3. InGaN structure influence on efficiency droop Oleg Rabinovich
- 4. Atomic-layer deposition for improved performance of III-N avalanche photodiodes John Hennessy, L. Douglas Bell, Shouleh Nikzad, Puneet Suvarna, Jeffrey M. Leathersich, Jonathan Marini and F. (Shadi) Shahedipour-Sandvik
- 5. Electrical characterization of thick InGaN films for photovoltaic applications Yoshitaka Nakano, Liwen Sang and Masatomo Sumiya
- 6. Growth of hBN using metallic boron: isotopically enriched h10BN and h11BN T. B. Hoffman, Y. Zhang, J. H. Edgar and D. K. Gaskill
- Part II. III-V and II-VI Materials and Devices: 7. Carrier dynamics in self-assembled InAs QD laser structures and broad-area InAs QD lasers grown by molecular beam epitaxy Yongkun Sin, Stephen LaLumondiere, William Lotshaw and Steven C. Moss
- 8. Dielectric response of light emitting semiconductor junction diodes: frequency and temperature domain study Kanika Bansal and Shouvik Datta
- 9. Carrier dynamics in MOVPE-grown bulk InGaAsNSb materials and epitaxial lift-off GaAs double heterostructures for multi-junction solar cells Yongkun Sin, Stephen LaLumondiere, Nathan Wells, Zachary Lingley, Nathan Presser, William Lotshaw, Steven C. Moss, Tae Wan Kim, Kamran Forghani, Luke J. Mawst, Thomas F. Kuech, Rao Tatavarti, Andree Wibowo and Noren Pan
- 10. OMVPE of InAlAs using alternative Al and As precursors Brittany L. Smith, Nichole M. Hoven, Glen Hillier, Seth M. Hubbard and David V. Forbes
- 11. Microwave reflection study of ultra-high mobility GaAs/AlGaAs 2D-electron system at large filling factors Tianyu Ye, Ramesh Mani and Werner Wegscheider
- 12. Leakage currents of large area InP/InGaAs heterostructures Anders Olsson, Abuduwayiti Aierken, Jani Oksanen, Harri Lipsanen and Jukka Tulkki
- 13. Improved electrical properties of Ga2O3:Sn/CIGS hetero-junction photoconductor Kenji Kikuchi, Shigeyuki Imura, Kazunori Miyakawa, Hiroshi Ohtake, Misao Kubota and Eiji Ohta
- 14. Some aspects of AIIIBV and AIIBVI growth Oleg Rabinovich
- Part III. Nanostructures, Defects and Other Materials: 15. Production and biofunctionalization of elongated semiconducting nanocrystals for ex-vivo applications Tobias Jochum, Daniel Ness, Marieke Dieckmann, Katja Werner, Jan Niehaus and Horst Weller
- 16. Optical fabrication of semiconductor single-crystalline microspheres in superfluid helium Shinya Okamoto, Satoshi Ichikawa, Yosuke Minowa and Masaaki Ashida
- 17. Carbon-related deep-level defects and turn-on recovery characteristics in AlGaN/GaN hetero-structures Yoshitaka Nakano, Yoshihiro Irokawa, Masatomo Sumiya, Yasunobu Sumida, Shuichi Yagi and Hiroji Kawai
- 18. GaSb on Si: structural defects and their effect on surface morphology and electrical properties Shailesh Kumar Madisetti, Vadim Tokranov, Andrew Greene, Steven Novak, Michael Yakimov, Serge Oktyabrsky, Steven Bentley and Ajey P. Jacob
- 19. Cause of forward voltage degradation for 4H-SiC PiN diode with additional process Tetsuro Hemmi, Koji Nakayama, Katsunori Asano, Tetsuya Miyazawa and Hidekazu Tsuchida
- 20. Electrical characteristics of TiW/ZnO Schottky contact with ALD and PLD Mei Shen, Amir Afshar, Manisha Gupta, Gem Shoute, Ken Cadien, Ying Yin Tsui and Doug Barlage.
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