Fundamentals of nanoscaled field effect transistors

著者

• Chaudhry, Amit

書誌事項

Fundamentals of nanoscaled field effect transistors

Amit Chaudhry

Springer, c2013

注記

Includes bibliographical references (p. 179-194) and index

内容説明・目次

内容説明

Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high- technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.

目次

Scaling of a MOS Transistor.- Nanoscale Effects- Gate Oxide Leakage Currents.- Nanoscale Effects- Inversion Layer Quantization.- Dielectrics for Nanoelectronics.- Germanium Technology.- Biaxial s-Si Technology.- Uniaxial s-Si Technology.- Alternate MOS Structures.- Graphene Technology.

「Nielsen BookData」 より

詳細情報

• NII書誌ID(NCID): BB17374538
• ISBN:
  • 9781461468219
• LCCN: 2013932710
• 出版国コード: us
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: New York
• ページ数/冊数: xiv, 201 p.
• 大きさ: 25 cm
• 分類:
  • LCC : TK7871.95
• 件名:
  • LCSH : Metal oxide semiconductor field-effect transistors
  • LCSH : Nanotechnology