Semiconductor process reliability in practice
Author(s)
Bibliographic Information
Semiconductor process reliability in practice
McGraw-Hill, c2013
- hbk.
Available at 2 libraries
  Aomori
  Iwate
  Miyagi
  Akita
  Yamagata
  Fukushima
  Ibaraki
  Tochigi
  Gunma
  Saitama
  Chiba
  Tokyo
  Kanagawa
  Niigata
  Toyama
  Ishikawa
  Fukui
  Yamanashi
  Nagano
  Gifu
  Shizuoka
  Aichi
  Mie
  Shiga
  Kyoto
  Osaka
  Hyogo
  Nara
  Wakayama
  Tottori
  Shimane
  Okayama
  Hiroshima
  Yamaguchi
  Tokushima
  Kagawa
  Ehime
  Kochi
  Fukuoka
  Saga
  Nagasaki
  Kumamoto
  Oita
  Miyazaki
  Kagoshima
  Okinawa
  Korea
  China
  Thailand
  United Kingdom
  Germany
  Switzerland
  France
  Belgium
  Netherlands
  Sweden
  Norway
  United States of America
Note
Formerly CIP Uk
Includes bibliographical references and index
Description and Table of Contents
Description
Publisher's Note: Products purchased from Third Party sellers are not guaranteed by the publisher for quality, authenticity, or access to any online entitlements included with the product.
Proven processes for ensuring semiconductor device reliabilityCo-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide.
Coverage includes:
Basic device physics
Process flow for MOS manufacturing
Measurements useful for device reliability characterization
Hot carrier injection
Gate-oxide integrity (GOI) and time-dependentdielectric breakdown (TDDB)
Negative bias temperature instability
Plasma-induced damage
Electrostatic discharge protection of integrated circuits
Electromigration
Stress migration
Intermetal dielectric breakdown
by "Nielsen BookData"