Semiconductor process reliability in practice
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Bibliographic Information
Semiconductor process reliability in practice
McGraw-Hill, c2013
- hbk.
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Formerly CIP Uk
Includes bibliographical references and index
Description and Table of Contents
Description
Publisher's Note: Products purchased from Third Party sellers are not guaranteed by the publisher for quality, authenticity, or access to any online entitlements included with the product.
Proven processes for ensuring semiconductor device reliabilityCo-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide.
Coverage includes:
Basic device physics
Process flow for MOS manufacturing
Measurements useful for device reliability characterization
Hot carrier injection
Gate-oxide integrity (GOI) and time-dependentdielectric breakdown (TDDB)
Negative bias temperature instability
Plasma-induced damage
Electrostatic discharge protection of integrated circuits
Electromigration
Stress migration
Intermetal dielectric breakdown
by "Nielsen BookData"
