Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

著者

• International Conference on Silicon Carbide and Related Materials
• Okumura, Hajime

書誌事項

Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

edited by Hajime Okumura ... [et al.]

（Materials science forum, v. 778-780）

Trans Tech Publications Ltd, c2014

• : set
• pt. 1
• pt. 2

タイトル別名

ICSCRM 2013

注記

Includes bibliographical references and indexes

Summary: "The conference provided a scientific forum on the wide bandgap semiconductors for 794 participants from 24 countries"--Pref

内容説明・目次

内容説明

The papers cover most of the current research efforts on the wide bandgap semiconductor silicon carbide (SiC) and related materials, and a wide range of topics from crystal growth to their power electronics applications. In these proceedings, the written version of 270 contributed papers and 13 invited papers are included. The major chapters of the proceedings collect papers in the area of bulk growth of SiC, epitaxial growth of SiC, physical properties and characterization, processing, devices and application. There are three shorter chapters on graphene, III-nitrides and related materials. Volume is indexed by Thomson Reuters CPCI-S (WoS). The 283 papers are grouped as follows: Chapter 1: SiC Bulk Growth; Chapter 2: SiC Epitaxial Growth; Chapter 3: Physical Properties and Characterization of SiC; Chapter 4: Processing of SiC; Chapter 5: Devices and Circuits; Chapter 6: Related Materials.

目次

Preface, Committees, Sponsors and Overview Chapter 1: SiC Bulk Growth 1.1 PVT and CVD Open Issues in SiC Bulk Growth Real-Time Measurement of the Evolution of Growth Facets during SiC PVT Bulk Growth Using 3-D X-Ray Computed Tomography Effect of Facet Occurrence on Polytype Destabilization during Bulk Crystal Growth of SiC by Seeded Sublimation Development of RAF Quality 150mm 4H-SiC Wafer Impurity Behavior of High Purity SiC Powder during SiC Crystal Growth Effect of TaC-Coated Crucible on SiC Single Crystal Growth Interaction between Vapor Species and Graphite Crucible during the Growth of SiC by PVT Comparison of Thermodynamic Databases for the Modeling of SiC Growth by PVT Spiral Step Dissociation on PVT Grown SiC Crystals Reciprocal Space Mapping Studies of the Initial Stage of the PVT Growth of 4H-SiC Crystals Parallel and Perpendicular to the c-Axis Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique 4H-SiC Bulk Growth Using High-Temperature Gas Source Method Fast 4H-SiC Crystal Growth by High-Temperature Gas Source Method Dislocation Analysis of 4H-SiC Crystals Obtained at Fast Growth Rate by the High-Temperature Gas Source Method 1.2 Solution Growth Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent Electromagnetic Enhancement of Carbon Transport in SiC Solution Growth Process: A Numerical Modeling Approach Solution Growth of p-Type 4H-SiC Bulk Crystals with Low Resistivity Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal Solvents Chapter 2: SiC Epitaxial Growth 2.1 Homoepitaxial Growth Evolution of Fast 4H-SiC CVD Growth and Defect Reduction Techniques Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density Effects of the Growth Rate on the Quality of 4H Silicon Carbide Films for MOSFET Applications Conversion of Basal Plane Dislocations to Threading Edge Dislocations in Growth of Epitaxial Layers on 4H-SiC Substrates with a Vicinal Off-Angle Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor C-Face Epitaxial Growth of 4H-SiC on Quasi-150-mm Diameter Wafers with High Throughput Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6x150 mm Warm-Wall Planetary Reactor Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation 4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106 Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate Homo-Epitaxial Growth on Low-Angle Off Cut 4H-SiC Substrate Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT Dependence of the Growth Parameters on the In-Plane Distribution of 150 mm Size SiC Epitaxial Wafer Comparative Study of Defects in 4H-SiC Epilayers Grown on 4o Off-Axis (0001) and (000-1) Substrates An Approach to Trace Defects Propagation during SiC Epitaxy Characterization of the Defect Evolution in Thick Heavily Al-Doped 4H-SiC Epilayers Crystal Growth of Highly Oriented Silicon Carbide by Chemical Vapor Deposition with Alternating Gas Supply Effect of Process Parameters on Dislocation Density in Thick 4H-SiC Epitaxial Layers Grown by Chloride-Based CVD on 4 Degrees Off-Axis Substrates 50 m-Thick 100 mm 4H-SiC Epitaxial Layer Growth by Warm-Wall Planetary Reactor Demonstration of High Quality 4H-SiC Epitaxy by Using the Two-Step Growth Method Simulation Study of High-Speed Wafer Rotation Effects in a Vertical Reactor for 4H-SiC Epitaxial Growth on 150 mm Substrates Revisiting the Thermochemical Database of Si-C-H System Related to SiC CVD Modeling Fast Growth Rate Epitaxy on 4 Degrees Off-Cut 4-Inch Diameter 4H-SiC Wafers Simulation Studies on Giant Step Bunching in 4H-SiC Epitaxial Growth: Cluster Effect Ge Assisted SiC Epitaxial Growth by CVD on SiC Substrate 4H-SiC Epitaxial Growth on C-Face 150 mm SiC Substrate Study of Surface Morphologies of On-Axis 6H-SiC Wafer after High-Temperature Etching and Epitaxial Growth First-Principles Study of Nanofacet Formation on 4H-SiC(0001) Surface Improved Epilayer Surface Morphology on 2 Off-Cut 4H-SiC Substrates HCl Assisted Growth of Thick 4H-SiC Epilayers for Bipolar Devices Homo-Epitaxial Growth on 2 Degrees Off-Cut 4H-SiC(0001) Si-Face Substrates Using H2-SiH4-C3H8 CVD System Simulations of SiC CVD - Perspectives on the Need for Surface Reaction Model Improvements Simulation Studies on Giant Step Bunching Accompanying Trapezoid-Shape Defects in 4H-SiC Epitaxial Layer 2.2 Heteroepitaxial Growth Heteroepitaxial CVD Growth of 3C-SiC on Diamond Substrate The Influence of the Carbonization Mechanisms on the Crystalline Quality of the Carbonization Layer for Heteroepitaxial Growth of 3C-SiC 3C-SiC Seeded Growth on Diamond Substrate by VLS Transport Monte Carlo Study of the Early Growth Stages of 3C-SiC on Misoriented and 6H-Sic Substrates Optical Investigation of 3C-SiC Hetero-Epitaxial Layers Grown by Sublimation Epitaxy under Gas Atmosphere A Study of the Intermediate Layer in 3C-SiC/6H-SiC Heterostructures Formation of an Interfacial Buffer Layer for 3C-SiC Heteroepitaxy on AlN/Si Substrates Curvature Evaluation of Si/3C-SiC/Si Hetero-Structure Grown by Chemical Vapor Deposition Chapter 3: Physical Properties and Characterization of SiC 3.1 Intrinsic Point Defetcs and Carrier Lifetime Characterization of Ge-Doped Homoepitaxial Layers Grown by Chemical Vapor Deposition Persistent Conductivity in n-Type 3C-SiC Observed at Low Temperatures Minority Carrier Transient Spectroscopy of As-Grown, Electron Irradiated and Thermally Oxidized p-Type 4H-SiC Annealing of Electron Irradiated, Thick, Ultrapure 4H SiC between 1100 DegreesC and 1500 DegreesC and Measurements of Lifetime and Photoluminescence Identification of Structures of the Deep Levels in 4H-SiC Oxidation Induced ON1, ON2a/b Defects in 4H-SiC Characterized by DLTS Identification of the Negative Carbon Vacancy at Quasi-Cubic Site in 4H-SiC by EPR and Theoretical Calculations Defect Levels in High Purity Semi-Insulating 4H-SiC Studied by Alpha Particle Induced Charge Transient Spectroscopy Correlation between Microwave Reflectivity and Excess Carrier Concentrations in 4H-SiC Diffusion of Alkali Metals in SiC Comparison of Carrier Lifetime Measurements and Mapping in 4H SiC Using Time Resolved Photoluminscence and -PCD On Photoelectrical Properties of 6H-SiC Bulk Crystals PVT-Grown on 6H- and 4H-SiC Substrates 3.2 Extended Defects Basal Plane Dislocations from Inclusions in 4H-SiC Epitaxy Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers Polarized Photoluminescence from Partial Dislocations in 4H-SiC Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers Measurement of Critical Thickness for the Formation of Interfacial Dislocations and Half Loop Arrays in 4H-SiC Epilayer via X-Ray Topography Study of V and Y Shape Frank-Type Stacking Faults Formation in 4H-SiC Epilayer Three-Dimensional Imaging of Extended Defects in 4H-SiC by Optical Second-Harmonic Generation Driving Force of Stacking Fault Expansion in 4H-SiC PN Diode by In Situ Electroluminescence Imaging Dislocation Revelation for 4H-SiC by Using Vaporized NaOH: A Possible Way to Distinguish Edge, Screw and Mixed Threading Dislocations by Etch Pit Method TEM Observation of Defect Structure of Low-Energy Ion Implanted SiC Structure and Origin of Carrot Defects on 4H-SiC Homoepitaxial Layers Dislocation Analysis of 4H-SiC Using KOH Low Temperature Etching Characterization of Damage Induced by Electric Discharge Machining and Wiresawing with Loose Abrasive at Subsurface of SiC Crystal Characterization of Threading Edge Dislocation in 4H-SiC by X-Ray Topography and Transmission Electron Microscopy Microstructural Analysis of Damaged Layer Introduced during Chemo-Mechanical Polishing Origin Analyses of Trapezoid-Shape Defects in 4-Deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography Micro-Raman Characterization of 4H-SiC Stacking Faults Defects Grouping and Characterizations of PL-Imaging Methods for 4H-SiC Epitaxial Layers Characterization of Vacant Broken Line Defects in A-Face Grown Crystals of Silicon Carbide Formation of Double Stacking Faults from Polishing Scratches on 4H-SiC (0001) Substrate Nanomechanical Analysis of Triangular Defect in 4H-SiC Epilayer Analysis on Generation of Localized Step-Bunchings on 4H-SiC(0001)Si Face by Synchrotron X-Ray Topography Non Destructive Inspection of Dislocations in SiC Wafer by Mirror Projection Electron Microscopy 3.3 Surface and Interface Nanoscale Characterization of SiC Interfaces and Devices C-Face Interface Defects in 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance Accurate Characterization of Interface State Density of SiC MOS Structures and the Impacts on Channel Mobility Deep-Level Transient Spectroscopy Characterization of Interface States in SiO2/4H-SiC Structures Close to the Conduction Band Edge Low Frequency Noise Analysis of Monolithically Fabricated 4H-SiC CMOS Field Effect Transistors Estimation of Surface Recombination Velocities for n-Type 4H-SiC Surfaces Treated by Various Processes Drain-Current Deep Level Transient Spectroscopy Investigation on Epitaxial Graphene/6H-SiC Field Effect Transistors Single Event Gate Rupture in SiC MOS Capacitors with Different Gate Oxide Thicknesses 3.4 Stress and Mechanical Properties Mechanical Properties and Residual Stress of Thin 3C-SiC(111) Films Determined Using MEMS Structures Influence of P+-Implantation and Post-Annealing on Warpage Structure of 4H-SiC Wafers Residual Stress Measurements of 4H-SiC Crystals Using X-Ray Diffraction Evaluation of Mechanical and Optical Properties of Hetero-Epitaxial Single Crystal 3C-SiC Squared-Membrane 3.5 Fundamental Properties Temperature Dependence of Impact Ionization Coefficients in 4H-SiC Improved Analytical Expressions for Avalanche Breakdown in 4H-SiC High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure 28Si12C, Natural and 13C - Enriched 4H-SiC Carrier Density Dependence of Fano Type Interference in Raman Spectra of p-type 4H-SiC Crystallographic Structure of 8H- and 10H-SiC Analyzed by Raman Spectroscopy and Diffraction Methods Hall Factor Calculation for the Characterization of Transport Properties in N-Channel 4H-SiC MOSFETs Temperature and Electrical Field Dependence of the Ambipolar Mobility in N-Doped 4H-SiC High-Sensitivity High-Resolution Full-Wafer Imaging of the Properties of Large n-Type SiC Using the Relative Reflectance of Two Terahertz Waves Theoretical Investigation of the Single Photon Emitter Carbon Antisite-Vacancy Pair in 4H-SiC First Principles Investigation of Divacancy in SiC Polytypes for Solid State Qubit Application Impact of Carrier Lifetime on Efficiency of Photolytic Hydrogen Generation by p-Type SiC Direct Observation of the Edge Termination of Surface Steps on 4H/6H-SiC {0001} by Tilted Low-Voltage Scanning Electron Microscopy Chapter 4: Processing of SiC 4.1 MOS Processing, SiC-SiO2 Interfaces and Other Dielectrics Thin PSG Process for 4H-SiC MOSFET Depletion-Mode TDDB for n-Type MOS Capacitors of 4H-SiC Threshold Voltage Instability of SiC-MOSFETs on Various Crystal Faces Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Gate Oxide Stability Unexpected Effect of Thermal Storage Observed on SiC Power DMOSFET Radiation-Induced Trapped Charging Effects in SiC Power MOSFETs Reliability Improvement and Optimization of Trench Orientation of 4H-SiC Trench-Gate Oxide Degradation of SiO2/SiC Interface Properties due to Mobile Ions Intrinsically Generated by High-Temperature Hydrogen Annealing Reliability of Gate Oxides on 4H-SiC Epitaxial Surface Planarized by CMP Treatment Characterization of LaxHfyO Gate Dielectrics in 4H-SiC MOS Capacitor Si Emission into the Oxide Layer during Oxidation of Silicon Carbide High Mobility 4H-SiC MOSFETs Using Lanthanum Silicate Interface Engineering and ALD Deposited SiO2 Retarded Oxide Growth on 4H-SiC(0001) Substrates due to Sacrificial Oxidation Nano-Scale Native Oxide on 6H-SiC Surface and its Effect on the Ni/Native Oxide/SiC Interface Band Bending MOS Interfacial Studies Using Hall Measurement and Split C-V Measurement in n-Channel Carbon-Face 4H-SiC MOSFET Reduction of Density of 4H-SiC / SiO2 Interface Traps by Pre-Oxidation Phosphorus Implantation Conduction Mechanism of Leakage Current in Thermal Oxide on 4H-SiC Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETs Experimental Studies on Water Vapor Plasma Oxidation and Thermal Oxidation of 4H-SiC (0001) for Clarification of the Atomic-Scale Flattening Mechanism in Plasma Assisted Polishing Rapid Thermal Oxidation of Si-Face N and P-Type On-Axis 4H-SiC Influence of Diverse Post-Trench Processes on the Electrical Performance of 4H-SiC MOS Structures Impact of the Oxidation Temperature on the Interface Trap Density in 4H-SiC MOS Capacitors Deep Traps in 4H-SiC MOS Capacitors Investigated by Deep Level Transient Spectroscopy 4H-SiC MOS Capacitors and MOSFET Fabrication with Gate Oxidation at 1400 DegreesC Step-Bunching Dependence of the Lifetime of MOS Capacitor on 4o Off-Axis Si-Face 4H-SiC Epitaxial Wafers Nitridation Effects of Gate Oxide on Channel Properties of SiC Trench MOSFETs NF3 Added Oxidation of 4H-SiC(0001) and Suppression of Interface Degradation Characterization of SiO2/SiC Interfaces Annealed in N2O or POCl3 Growth of Gate Oxides on 4H-SiC by NO at Low Partial Pressures Preparation and Characterization of Nitridation Layer on 4H SiC (0001) Surface by Direct Plasma Nitridation Analysis of C-Face 4H-SiC MOS Capacitors with ZrO2 Gate Dielectric 4.2 Doping, Ion Implantation and Contacts Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-Type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contacts n- and p-Type Doping of 4H-SiC by Wet-Chemical Laser Processing Properties of Al Ohmic Contacts to n-type 4H-SiC Employing a Phosphorus-Doped and Crystallized Amorphous-Silicon Interlayer Microwave Annealing of Al+ Implanted 4H-SiC: Towards Device Fabrication Al+ Implanted 4H-SiC p+-i-n Diodes: Evidence for Post-Implantation-Annealing Dependent Defect Activation Temperature Dependence of Electric Conductivities in Femtosecond Laser Modified Areas in Silicon Carbide Comparative Study of the Current Transport Mechanisms in Ni2Si Ohmic Contacts on n- and p-Type Implanted 4H-SiC Ti/Al/Si Ohmic Contacts for both n-Type and p-Type 4H-SiC Development of a Novel Cap-Free Activation Annealing Technique of 4H-SiC by Si-Vapor Ambient Annealing Using TaC/Ta Composite Materials Low Cost Ion Implantation Process with High Heat Resistant Photoresist in Silicon Carbide Device Fabrication Characterization of Ohmic Ni/Ti/Al and Ni Contacts to 4H-SiC from -40 DegreesC to 500 DegreesC Electrical Properties of Mg-Implanted 4H-SiC Low Resistance Ohmic Contact Formation of Ni Silicide on Partially Si Ion Implanted n+ 4H-SiC On the Ti3SiC2 Metallic Phase Formation for Robust p-Type 4H-SiC Ohmic Contacts Microstructure Characterization of Si/Ni Contact Layers on n-Type 4H-SiC by TEM and XEDS Effect of Shallow n-Doping on Field Effect Mobility in p-Doped Channels of 4H-SiC MOS Field Effect Transistors Electrical Characteristics of Schottky Contacts on Ge-Doped 4H-SiC Impact of Interface Traps on Current-Voltage Characteristics of 4H-SiC Schottky-Barrier Diodes Junction Formation via Direct Bonding of Si and 6H-SiC I - V Characteristics in Surface-Activated Bonding (SAB) Based Si/SiC Junctions at Raised Ambient Temperatures 4.3 Etching, Cutting and Other Machining 4H-SiC Planarization Using Catalyst-Referred Etching with Pure Water Investigation of the Barrier Heights for Dissociative Adsorption of HF on SiC Surfaces in the Catalyst-Referred Etching Process Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures Off-Orientation Influence on C-Face (0001) 4H-SiC Surface Morphology Produced by Etching Using Chlorine Trifluoride Gas Development of Silicon Carbide Dry Etcher Using Chlorine Trifluoride Gas Investigation of Trenched and High Temperature Annealed 4H-SiC Removal of Mechanical-Polishing-Induced Surface Damages on 4H-SiC Wafers by Using Chemical Etching with Molten KCl+KOH Thinning of a Two-Inch Silicon Carbide Wafer by Plasma Chemical Vaporization Machining Using a Slit Electrode A Novel Grinding Technique for 4H-SiC Single-Crystal Wafers Using Tribo-Catalytic Abrasives Dicing of SiC Wafer by Atmospheric-Pressure Plasma Etching Process with Slit Mask for Plasma Confinement Multi-Wire Electrical Discharge Slicing for Silicon Carbide Part 2: Improvement on Manufacturing Wafers by Forty-Wire EDS Effects of Machining Fluid on Electric Discharge Machining of SiC Ingot High-Speed Slicing of SiC Ingot by High-Speed Multi Wire Saw Development of Multi-Wire Electric Discharge Machining for SiC Wafer Processing Fabrication of Electrostatically Actuated 4H-SiC Microcantilever Resonators by Using n/p/n Epitaxial Structures and Doping-Selective Electrochemical Etching Characteristics of a Schottky Barrier Diode and the SiC Wafers Sliced by Wire Electrical Discharge Machining Chapter 5: Devices and Circuits 5.1 Schottky Barrier Diodes Designing and Fabrication of the VLD Edge Termination for 3.3 kV SiC SBD Study of 4H-SiC Schottky Diode Designs for 3.3kV Applications Simulation, Fabrication and Characterization of 4500V 4H-SiC JBS Diode Evaluation of Buried Grid JBS Diodes High Voltage SiC JBS Diodes with Multiple Zone Junction Termination Extension Using Single Etching Step The Fabrication of 4H-SiC Floating Junction SBDs (FJ_SBDs) Temperature and dIDS/dt Dependence of the Switching Energy of SiC Schottky Diodes in Clamped Inductive Switching Applications Properties of a SiC Schottky Barrier Diode Fabricated with a Thin Substrate 4H-SiC Diode Avalanche Breakdown Voltage Estimation by Simulation and Junction Termination Extension Analysis Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation 5.2 PiN Diodes Ultrahigh-Voltage (> 20 kV) SiC PiN Diodes with a Space-Modulated JTE and Lifetime Enhancement Process via Thermal Oxidation Fabrication and Design of 10 kV PiN Diodes Using On-Axis 4H-SiC High Voltage and Fast Switching Reverse Recovery Characteristics of 4H-SiC PiN Diode Development of SiC Super-Junction (SJ) Devices by Multi-Epitaxial Growth VF Degradation of 4H-SiC PiN Diodes Using Low-BPD Wafers 13-kV, 20-A 4H-SiC PiN Diodes for Power System Applications Variant of Excess Current in 4H-SiC pn Structures The Cryogenic Testing and Characterisation of SiC Diodes Comparison of 5kV SiC JBS and PiN Diodes 5.3 JFETs and SITs 650V SiC JFET for High Efficiency Applications Gate-Drive Voltage Design for 600-V Vertical-Trench Normally-Off SiC JFETs toward 94% Efficiency Server Power Supply Evaluation of SiC Stack Cascode for 200 DegreesC Operations Beam Acceleration Experiment with SiC Based Power Supply and the Next Generation SiC-JFET Package The Role of Substrate Compensation on DC Characteristics of 4H-SiC MESFET with Buffer Layer: A Combined Two-Dimensional Simulations and Analytical Study Monolithic Integration of Power MESFET for High Temperature SiC Integrated Circuits SiC Current Limiting FETs (CLFs) for DC Applications 3 kV Normally-Off 4H-SiC Buried Gate Static Induction Transistors (SiC-BGSITs) 5.4 MOSFETs 1700V, 5.5mOhm-cm2 4H-SiC DMOSFET with Stable 225 DegreesC Operation A Novel Truncated V-Groove 4H-SiC MOSFET with High Avalanche Breakdown Voltage and Low Specific on-Resistance 40m / 1700V DioMOS (Diode in SiC MOSFET) for High Power Switching Applications Blocking Characteristics of 2.2 kV and 3.3 kV-Class 4H-SiC MOSFETs with Improved Doping Control for Edge Termination 4H-SiC Trench MOSFET with Bottom Oxide Protection SiC Trench MOSFET with an Integrated Low Von Unipolar Heterojunction Diode SiC Epi-Channel Lateral MOSFETs 600 V -Class V-Groove SiC MOSFETs 14.6 m cm2 3.3 kV DIMOSFET on 4H-SiC (000-1) 1200 V 4H-SiC DMOSFET with an Integrated Gate Buffer Designing of Quasi-Modulated Region in 4H-SiC Lateral RESURF MOSFETs Utilization of SiC MOSFET Body Diode in Hard Switching Applications Development of 3.3 kV SiC-MOSFET: Suppression of Forward Voltage Degradation of the Body Diode High Temperature Reliability of the SiC-MOSFET with Copper Metallization Impact of Hot Carrier Degradation and Positive Bias Temperature Stress on Lateral 4H-SiC nMOSFETs Investigation on Internally Unbalanced Switching Behavior for Realization of 1-cm2 SiC-MOSFET Reliability Performance of 1200 V and 1700 V 4H-SiC DMOSFETs for Next Generation Power Conversion Applications Comparison of 600V Si, SiC and GaN Power Devices Improvement of Channel Mobility in 4H-SiC C-Face MOSFETs by H2 Rich Wet Re-Oxidation Electrical Characteristics/Reliability Affected by Defects Analyzed by the Integrated Evaluation Platform for SiC Epitaxial Films Novel Gate Oxide Process for Realization of High Threshold Voltage in 4H-SiC MOSFET Comparative Study of 4H-SiC DMOSFETs with N2O Thermal Oxide and Deposit Oxide with Post Oxidation Anneal Characterization of SiO2/4H-SiC Interface by Device Simulation and Temperature Dependence of On-Resistance of SiC MOSFET Selection of SPICE Parameters and Equations for Effective Simulation of Circuits with 4H-SiC Power MOSFETs 5.5 Bipolar Junction Transistors Rapidly Maturing SiC Junction Transistors Featuring Current Gain ( ) > 130, Blocking Voltages up to 2700 V and Stable Long-Term Operation SiC Etching and Sacrificial Oxidation Effects on the Performance of 4H-SiC BJTs Modeling of High Performance 4H-SiC Emitter Coupled Logic Circuits Characterization of 4H-SiC Bipolar Junction Transistor at High Temperatures Stability of Current Gain in SiC BJTs 5.6 Tyristors Optical Triggering of High Current (1300 A), High-Voltage (12 kV) 4H-SiC Thyristor Static and Dynamic Performance Evaluation of >13 kV SiC-ETO and its Application as a Solid-State Circuit Breaker 5.7 IGBTs 20 kV 4H-SiC N-IGBTs On the TCAD Based Design Diagnostic Study of 4H-SiC Based IGBTs Effect of Current-Spreading Layer Formed by Ion Implantation on the Electrical Properties of High-Voltage 4H-SiC p-Channel IGBTs 5.8 Sensors Radiation-Induced Currents in 4H-SiC Dosimeters for Real-Time Gamma-Ray Dose Rate Monitoring Nuclear Radiation Detectors Based on 4H-SiC p+-n Junction Optical and Electrical Simulations of Solar Cell Based on Silicon and Silicon Carbide High Temperature Hydrogen Sensor Based on Silicon Carbide (SiC) MOS Capacitor Structure Discriminating High k Dielectric Gas Sensors Two Packaging Solutions for High Temperature SiC Diode Sensors Silicon Carbide Field Effect Transistors for Detection of Ultra-Low Concentrations of Hazardous Volatile Organic Compounds 5.9 Circuits, Packages and Systems High Speed Rail Awaits the next Breakthrough of Power Semiconductors Progress in High Voltage SiC and GaN Power Switching Devices High-Efficiency Power Conversion Using Silicon Carbide Power Electronics Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings SiC Power Module for Compact Power Conversion Equipment Inverter-Rectifier Using SiC Power Devices for Bidirectional Wireless Power Transfer System of Electric Vehicles SiC Power Devices as Enabler for High Power Density - Aspects and Prospects High Temperature Resistant Packaging for SiC Power Devices Using Interconnections Formed by Ni Micro-Electroplating Research of Silver Sintering Process and Reliability for High Temperature Operation of SiC Power Devices Pressure Dependence of Thermal Contact Resistance between Copper Heat Sink and Copper DBC Surfaces in SiC Power Device Packages SiC Power Devices Operation from Cryogenic to High Temperature: Investigation of Various 1.2kV SiC Power Devices Silicon Carbide Transistors for IC Design Applications up to 600 DegreesC High Temperature Electrical Characterization of 4H-SiC MESFET Basic Logic Gates Chapter 6: Related Materials 6.1 Graphene Controlling the Carrier Concentration of Epitaxial Graphene by Ultraviolet Illumination Electrical Nanocharacterization of Epitaxial Graphene/Silicon Carbide Schottky Contacts Carrier Mobility as a Function of Temperature in as-Grown and H-Intercalated Epitaxial Graphenes on 4H-SiC Stability and Reactivity of [11-20] Step in Initial Stage of Epitaxial Graphene Growth on SiC(0001) Optimizing the Vacuum Growth of Epitaxial Graphene on 6H-SiC Formation of Graphene onto Atomically Flat 6H-SiC Solid Phase Growth of Graphene on Silicon Carbide by Nickel Silicidation: Graphene Formation Mechanisms Backside Monitoring of Graphene on Silicon Carbide by Raman Spectroscopy Ion-Beam Irradiation Effect in the Growth Process of Graphene on Silicon Carbide-on-Insulator Substrates 6.2 III-Nitrides Commercialization of High 600V GaN-on-Silicon Power Devices Magnetoresistance of AlGaN/GaN High Electron Mobility Transistors on Silicon Evidence of Low Temperature Decomposition of GaN Hetero-Epitaxial Layers on C-Plane Sapphire Surface Characterized by Differential Scanning Calorimetry A Proposal to Apply Effective Acceptor Level for Representing Increased Ionization Ratio of Mg Acceptors in Extrinsically Photon-Recycled GaN Planarization of the Gallium Nitride Substrate Grown by the Na Flux Method Applying Catalyst-Referred Etching 6.3 Si1-xCx and ZnO Evaluation of Degradation due to Electron Irradiation of Si1-xCx S/D n-type MOSFETs Structural Analysis of ZnO Thin Films Grown in Room Temperature on PET Film

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詳細情報

• NII書誌ID(NCID): BB18344816
• ISBN:
  • 9783038350101
• LCCN: 2014498346
• 出版国コード: sz
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: Dumten-Zurich
• ページ数/冊数: 2 v. (xxxii, 1225 p.)
• 大きさ: 25 cm
• 分類:
  • LCC : TK7871.15.S56
  • DC23 : 620.1/93
• 件名:
  • LCSH : Silicon carbide -- Congresses
  • LCSH : Silicon carbide -- Electric properties -- Congresses
  • LCSH : Silicon-carbide thin films -- Congresses
  • LCSH : Nitrides -- Congresses
  • LCSH : Graphene -- Congresses
  • LCSH : Crystal growth -- Congresses
  • LCSH : Wide gap semiconductors -- Materials -- Congresses
  • LCSH : Wide gap semiconductors -- Materials -- Technological innovations -- Congresses
• 親書誌ID:
  • BA00294222