Arbitrary modeling of TSVs for 3D integrated circuits

Author(s)

    • Salah, Khaled
    • Ismail, Yehea I.
    • El-Rouby, Alaa

Bibliographic Information

Arbitrary modeling of TSVs for 3D integrated circuits

Khaled Salah, Yehea Ismail, Alaa El-Rouby

(Analog circuits and signal processing series / consulting editor, Mohammed Ismail)

Springer, c2015

Available at  / 2 libraries

Search this Book/Journal

Note

Includes bibliographical references and index

Description and Table of Contents

Description

This book presents a wide-band and technology independent, SPICE-compatible RLC model for through-silicon vias (TSVs) in 3D integrated circuits. This model accounts for a variety of effects, including skin effect, depletion capacitance and nearby contact effects. Readers will benefit from in-depth coverage of concepts and technology such as 3D integration, Macro modeling, dimensional analysis and compact modeling, as well as closed form equations for the through silicon via parasitics. Concepts covered are demonstrated by using TSVs in applications such as a spiral inductor and inductive-based communication system and bandpass filtering.

Table of Contents

Introduction: Work around Moore's Law.- 3D/TSV Enabling Technologies.- TSV Modeling and Analysis.- TSV Verification.- TSV Macro-Modeling Framework.- TSV Design Applications: TSV-Based On-Chip Spiral Inductor, TSV-Based On-Chip Wireless Communications and TSV-Based Bandpass Filter.- Imperfection in TSV Modeling.- New Trends in TSV.- TSV Fabrication.- Conclusions.

by "Nielsen BookData"

Related Books: 1-1 of 1

Details

Page Top