Microelectronic test pattern NBS-3 for evaluating the resistivity-dopant density relationship of silicon

Author(s)

• Buehler, Martin G.

Bibliographic Information

Microelectronic test pattern NBS-3 for evaluating the resistivity-dopant density relationship of silicon

Martin G. Buehler

（NBS special publication, 400-22 . Semiconductor measurement technology）

U.S. G.P.O., 1976

Access to Electronic Resource 2 items

• Microelectronic test pattern NBS-3 for evaluating the resistivity-dopant density relationship of silicon / Martin G. Buehler.

  1976

  HathiTrust

  

• Microelectronic test pattern NBS-3 for evaluating the resistivity-dopant density relationship of silicon / Martin G. Buehler.

  400-22 1976

  HathiTrust

  

Note

Includes bibliographical references

Details

• NCID: BB18575455
• LCCN: 76600032
• Country Code: us
• Title Language Code: eng
• Text Language Code: eng
• Place of Publication: Washington
• Pages/Volumes: vi, 49 p.
• Size: 26 cm
• Classification:
  • LCC : QC100
  • LCC : TK7871.85
  • DC : 602/.1 s
  • DC : 621.3815/2/028
• Subject Headings:
  • LCSH : Semiconductors -- Testing
  • LCSH : Silicon -- Testing
  • LCSH : Microelectronics
• Parent Bibliography ID:
  • BA0011083X