Defects in semiconductors

Author(s)

• Romano, Lucia
• Privitera, Vittorio
• Jagadish, C. (Chennupati)

Bibliographic Information

Defects in semiconductors

edited by Lucia Romano, Vittorio Privitera, Chennupati Jagadish

（Semiconductors and semimetals, v. 91）

Academic Press, 2015

Note

Includes bibliographical references and index

Description and Table of Contents

Description

This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths.

Table of Contents

Role of Defects in the Dopant Diffusion in Si Peter Pichler Electron and Proton Irradiation of Silicon Arne Nylandsted Larsen and Abdelmadjid Mesli Ion Implantation Defects and Shallow Junctions in SI and GE Enrico Napolitani and Giuliana Impellizzeri Defective Solid-phase Epitaxial Growth of Si Nicholas G. Rudawski, Aaron G. Lind and Thomas P. Martin Nanoindentation of Silicon and Germanium Mangalampalli S. R. N. Kiran, Bianca Haberl, Jodie E. Bradby and James S. Williams Analytical Techniques for Electrically Active Defect Detection Eddy Simoen, Johan Lauwaert and Henk Vrielinck Surface and Defect States in Semiconductors Investigated by Surface Photovoltage Daniela Cavalcoli, Beatrice Fraboni and Anna Cavallini Point Defects in ZnO Matthew D. McCluskey Point Defects in GaN Michael A. Reshchikov Point Defects in Silicon CarbideNaoya Iwamoto and Bengt G. Svensson

by "Nielsen BookData"

Details

• NCID: BB18782201
• ISBN:
  • 9780128019351
• Country Code: us
• Title Language Code: eng
• Text Language Code: eng
• Place of Publication: Waltham, Mass. ; Tokyo
• Pages/Volumes: xii, 445 p.
• Size: 24 cm
• Classification:
  • DC23 : 621.38152
• Subject Headings:
  • LCSH : Semiconductors -- Defects
• Parent Bibliography ID:
  • BA00240449