The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon
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The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon
（NBS special publication, 400-47 . Semiconductor measurement technolog）
U.S. G.P.O., 1979
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Includes bibliographical references
