Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011, Miyazaki, Japan

著者

• Yamada-Kaneta, Hiroshi
• Sakai, Akira
• International Conference on Defects-Recognition, Imaging and Physics in Semiconductors

書誌事項

Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011, Miyazaki, Japan

edited by Hiroshi Yamada-Kaneta, Akira Sakai

（Materials science forum, v. 725）

Trans Tech Pubs., Ltd., c2012

• : pbk

注記

Includes bibliographical references and indexes

内容説明・目次

内容説明

This volume documents the latest understanding of many topics of current interest in the science and technology of defects in semiconductors. The investigation of defects in semiconductors is a little different to that in other fields of materials science: in order to observe defects in semiconductors and elucidate their physical nature, a very wide range of tools and techniques has been introduced or created; thanks to the inventive ideas of the researchers. This work clearly reflects the lively state of defect investigation in semiconductors. Volume is indexed by Thomson Reuters CPCI-S (WoS).

目次

Preface, Message and Committee Chapter 1: Defects in SiC Imaging and Strain Analysis of Threading-Edge and Basal-Plane Dislocations in 4H-SiC Using X-Ray Three-Dimensional Topography Threading Dislocations in 4H-SiC Observed by Double-Crystal X-Ray Topography Characterization of Dislocation Structures in Hexagonal SiC by Transmission Electron Microscopy Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC Epilayers Formation of Nanovoids in Femtosecond Laser-Irradiated Single Crystals of Silicon Carbide Electron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings Frank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE Method Separation of the Driving Force and Radiation-Enhanced Dislocation Glide in 4H-SiC Study of Defects Generated by Standard- and Plasma-Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers Different Dissociation Behavior of [11-20] and Non-[11-20] Basal Plane Dislocations in 4H-Si under Electron Beam Irradiation Density of Etch Pits on C-Face 4H-SiC Surface Produced by ClF3 Gas Defect Related Leakage Current Components in SiC Schottky Barrier Diode Rapid Terahertz Imaging of Carrier Density of 3C-SiC Chapter 2: Nitride Materials and Devices Cathodoluminescence Study of Ammonothermal GaN Crystals The Effect of the Indenter Orientation on the Formation of Dislocations and Cracks in (0001) GaN Bulk Crystals Defect Propagation from 3C-SiC to III-Nitride Characterization of Dislocations in GaN Thin Film and GaN/AlN Multilayer Microscopic Degradation Analysis of RF-Stressed AlGaN/GaN HEMTs Chapter 3: III-V Compounds and Devices Distribution of Misfit Dislocations at the InGaAs/GaAs(001) Interface Observed by Monochromatic X-Ray Topography Effects of in Content on Anisotropies in Strain Relaxation Processes of InGaAs/GaAs (001) Measured by Real-Time Three-Dimensional Reciprocal Space Mapping Nitrogen Related Deep Levels in GaAsN Films Investigated by a Temperature Dependence of Piezoelectric Photothermal Signal Intermixing in InP-Based Quantum Well Photonic Structures Induced by the Dry-Etching Process: A Spectral Imaging Cathodoluminescence Study Defect Propagation in Broad-Area Diode Lasers Kinetics of Defect Propagation during the Catastrophic Optical Damage (COD) in Broad-Area Diode Lasers Nondestructive Measurement of Carrier Density in GaAs Using Relative Reflectivity of Two Terahertz Waves Chapter 4: Photovoltaics: From Material to Module Lock-In Thermography and Related Topics in Photovoltaic Research Electrical/Optical Activities of Grain Boundaries in Multicrystalline Si EBIC Study on Metal Contamination at Intra Grain Defects in Multicrystalline Silicon for Solar Cells Evaluation of Silicon Substrates Fabricated by Seeding Cast Technique Combined EL and LBIC Study of the Electrical Activity of Defects in Solar Cells Based on Innovative Wafers Grown by Casting Methods Behaviour of Light Induced Defect Generation and Carrier Lifetime Degradation in Solar Grade Silicon Considerations on the Effect of Interstitial and Precipitated Fe in Intentionally Fe-Doped mc-Silicon High-Speed Deep-Level Luminescence Imaging in Multicrystalline Si Solar Cells Analysis of Lattice Distortion in Multicrystalline Silicon for Photovoltaic Cells by Synchrotron White X-Ray Microbeam Diffraction Structural Study of Small Angle Grain Boundaries in Multicrystalline Si Combinatorial Synthesis Study of Passivation Layers for Solar Cell Applications Change of the Characterization Techniques as Progress of CuInSe2-Based Thin-Film PV Technology Temperature Dependence of Linear Thermal Expansion of CuGaSe2 Crystals Reduction of Crack Formation in Transcription of Cu(In,Ga)Se2 Thin Film Solar Cell Structure Evaluation of Organic Thin Film Solar Cells Using 3-Diode Equivalent Circuit Model with Inverted Diode 2-Dimensional Mapping of Power Consumption Due to Electrode Resistance Using Simulator for Concentrator Photovoltaic Module Two-Dimensional Mapping of Localized Characteristics of Concentrator Photovoltaic Module Chapter 5: Group IV Materials: Defect, Impurity, and Nanostructure Mono Vacancy Generation by Short Annealing in Nitrogen Doped FZ Silicon Wafers Spectroscopic Investigation of Silicon Polymorphs Formed by Indentation Vibrational Dynamics of Impurities in Semiconductors: Phonon Trapping and Isotope Effects Formation and Annealing Behavior of Copper Centers in Silicon Crystal Measured by Photoluminescence and Deep-Level Transient Spectroscopy DLTS Study of Pd-H Complexes in Si Effect of Nitrogen Doping on Vacancy State in Silicon Crystals Observed by Low-Temperature Ultrasonic Measurements Nitrogen Doped 300 mm Czochralski Silicon Wafers Optimized with Respect to Voids with Laterally Homogeneous Internal Getter Capabilities Rapid Imaging of Carrier Density of Si Using Reflectance Measurement in the Terahertz Region Reliability Improvement in Silicon Dioxide Gate-Length Dependent Radiation Damage in 2-MeV Electron-Irradiated Si1-xGex S/D p-MOSFETs Impact of RTA on the Morphology of Oxygen Precipitates and on the Getter Efficiency for Cu and Ni in Si Wafers Density Functional Theory Analysis on Behavior of Metal Impurities in Ge (100) / Si (100) Effect of Si3N4 Coating on Strain and Fracture of Si Ingots Evaluation of Optical Properties for Nanocrystal Si Dot Layers Fabricated by CVD as a Function of Size Reduction MicroRaman Spectroscopy of Si Nanowires: Influence of Size Chapter 6: Functional Oxides and Other Materials Electron-Beam-Induced Current Study of Electronic Property Change at SrTiO3 Bicrystal Interface Induced by Forming Process Structural and Electronic Structure of SnO2 by the First-Principle Study XRD Investigation of the Crystalline Quality of Sn Doped -Ga2O3 Films Deposited by the RF Magnetron Sputtering Method Improvement of the Crystalline Quality of -Ga2O3 Films by High-Temperature Annealing Characterization of Spin Coated Nondoped and In-Doped ZnO Films Using Novel Precursor Solution Electrical Properties of Fluorine Doped Tin Dioxide Film Grown by Spray Method Effect of Si Doping on the Crystal Structure of HVPE Grown Boron Phosphide Evaluation of GexSbyTez Film Grown by Chemical Vapor Deposition

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詳細情報

• NII書誌ID(NCID): BB20186831
• ISBN:
  • 9783037854426
• 出版国コード: sz
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: Durnten-Zurich
• ページ数/冊数: xiii, 299 p.
• 大きさ: 24 cm
• 親書誌ID:
  • BA00294222