Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011, Miyazaki, Japan
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Bibliographic Information
Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011, Miyazaki, Japan
（Materials science forum, v. 725）
Trans Tech Pubs., Ltd., c2012
- : pbk
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Includes bibliographical references and indexes
Description and Table of Contents
Description
This volume documents the latest understanding of many topics of current interest in the science and technology of defects in semiconductors. The investigation of defects in semiconductors is a little different to that in other fields of materials science: in order to observe defects in semiconductors and elucidate their physical nature, a very wide range of tools and techniques has been introduced or created; thanks to the inventive ideas of the researchers. This work clearly reflects the lively state of defect investigation in semiconductors.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
Table of Contents
Preface, Message and Committee
Chapter 1: Defects in SiC
Imaging and Strain Analysis of Threading-Edge and Basal-Plane Dislocations in 4H-SiC Using X-Ray Three-Dimensional Topography
Threading Dislocations in 4H-SiC Observed by Double-Crystal X-Ray Topography
Characterization of Dislocation Structures in Hexagonal SiC by Transmission Electron Microscopy
Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC Epilayers
Formation of Nanovoids in Femtosecond Laser-Irradiated Single Crystals of Silicon Carbide
Electron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing
Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings
Frank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE Method
Separation of the Driving Force and Radiation-Enhanced Dislocation Glide in 4H-SiC
Study of Defects Generated by Standard- and Plasma-Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers
Different Dissociation Behavior of [11-20] and Non-[11-20] Basal Plane Dislocations in 4H-Si under Electron Beam Irradiation
Density of Etch Pits on C-Face 4H-SiC Surface Produced by ClF3 Gas
Defect Related Leakage Current Components in SiC Schottky Barrier Diode
Rapid Terahertz Imaging of Carrier Density of 3C-SiC
Chapter 2: Nitride Materials and Devices
Cathodoluminescence Study of Ammonothermal GaN Crystals
The Effect of the Indenter Orientation on the Formation of Dislocations and Cracks in (0001) GaN Bulk Crystals
Defect Propagation from 3C-SiC to III-Nitride
Characterization of Dislocations in GaN Thin Film and GaN/AlN Multilayer
Microscopic Degradation Analysis of RF-Stressed AlGaN/GaN HEMTs
Chapter 3: III-V Compounds and Devices
Distribution of Misfit Dislocations at the InGaAs/GaAs(001) Interface Observed by Monochromatic X-Ray Topography
Effects of in Content on Anisotropies in Strain Relaxation Processes of InGaAs/GaAs (001) Measured by Real-Time Three-Dimensional Reciprocal Space Mapping
Nitrogen Related Deep Levels in GaAsN Films Investigated by a Temperature Dependence of Piezoelectric Photothermal Signal
Intermixing in InP-Based Quantum Well Photonic Structures Induced by the Dry-Etching Process: A Spectral Imaging Cathodoluminescence Study
Defect Propagation in Broad-Area Diode Lasers
Kinetics of Defect Propagation during the Catastrophic Optical Damage (COD) in Broad-Area Diode Lasers
Nondestructive Measurement of Carrier Density in GaAs Using Relative Reflectivity of Two Terahertz Waves
Chapter 4: Photovoltaics: From Material to Module
Lock-In Thermography and Related Topics in Photovoltaic Research
Electrical/Optical Activities of Grain Boundaries in Multicrystalline Si
EBIC Study on Metal Contamination at Intra Grain Defects in Multicrystalline Silicon for Solar Cells
Evaluation of Silicon Substrates Fabricated by Seeding Cast Technique
Combined EL and LBIC Study of the Electrical Activity of Defects in Solar Cells Based on Innovative Wafers Grown by Casting Methods
Behaviour of Light Induced Defect Generation and Carrier Lifetime Degradation in Solar Grade Silicon
Considerations on the Effect of Interstitial and Precipitated Fe in Intentionally Fe-Doped mc-Silicon
High-Speed Deep-Level Luminescence Imaging in Multicrystalline Si Solar Cells
Analysis of Lattice Distortion in Multicrystalline Silicon for Photovoltaic Cells by Synchrotron White X-Ray Microbeam Diffraction
Structural Study of Small Angle Grain Boundaries in Multicrystalline Si
Combinatorial Synthesis Study of Passivation Layers for Solar Cell Applications
Change of the Characterization Techniques as Progress of CuInSe2-Based Thin-Film PV Technology
Temperature Dependence of Linear Thermal Expansion of CuGaSe2 Crystals
Reduction of Crack Formation in Transcription of Cu(In,Ga)Se2 Thin Film Solar Cell Structure
Evaluation of Organic Thin Film Solar Cells Using 3-Diode Equivalent Circuit Model with Inverted Diode
2-Dimensional Mapping of Power Consumption Due to Electrode Resistance Using Simulator for Concentrator Photovoltaic Module
Two-Dimensional Mapping of Localized Characteristics of Concentrator Photovoltaic Module
Chapter 5: Group IV Materials: Defect, Impurity, and Nanostructure
Mono Vacancy Generation by Short Annealing in Nitrogen Doped FZ Silicon Wafers
Spectroscopic Investigation of Silicon Polymorphs Formed by Indentation
Vibrational Dynamics of Impurities in Semiconductors: Phonon Trapping and Isotope Effects
Formation and Annealing Behavior of Copper Centers in Silicon Crystal Measured by Photoluminescence and Deep-Level Transient Spectroscopy
DLTS Study of Pd-H Complexes in Si
Effect of Nitrogen Doping on Vacancy State in Silicon Crystals Observed by Low-Temperature Ultrasonic Measurements
Nitrogen Doped 300 mm Czochralski Silicon Wafers Optimized with Respect to Voids with Laterally Homogeneous Internal Getter Capabilities
Rapid Imaging of Carrier Density of Si Using Reflectance Measurement in the Terahertz Region
Reliability Improvement in Silicon Dioxide
Gate-Length Dependent Radiation Damage in 2-MeV Electron-Irradiated Si1-xGex S/D p-MOSFETs
Impact of RTA on the Morphology of Oxygen Precipitates and on the Getter Efficiency for Cu and Ni in Si Wafers
Density Functional Theory Analysis on Behavior of Metal Impurities in Ge (100) / Si (100)
Effect of Si3N4 Coating on Strain and Fracture of Si Ingots
Evaluation of Optical Properties for Nanocrystal Si Dot Layers Fabricated by CVD as a Function of Size Reduction
MicroRaman Spectroscopy of Si Nanowires: Influence of Size
Chapter 6: Functional Oxides and Other Materials
Electron-Beam-Induced Current Study of Electronic Property Change at SrTiO3 Bicrystal Interface Induced by Forming Process
Structural and Electronic Structure of SnO2 by the First-Principle Study
XRD Investigation of the Crystalline Quality of Sn Doped -Ga2O3 Films Deposited by the RF Magnetron Sputtering Method
Improvement of the Crystalline Quality of -Ga2O3 Films by High-Temperature Annealing
Characterization of Spin Coated Nondoped and In-Doped ZnO Films Using Novel Precursor Solution
Electrical Properties of Fluorine Doped Tin Dioxide Film Grown by Spray Method
Effect of Si Doping on the Crystal Structure of HVPE Grown Boron Phosphide
Evaluation of GexSbyTez Film Grown by Chemical Vapor Deposition
by "Nielsen BookData"
