High performance silicon imaging : fundamentals and applications of CMOS and CCD sensors

Author(s)

    • Durini, Daniel

Bibliographic Information

High performance silicon imaging : fundamentals and applications of CMOS and CCD sensors

edited by Daniel Durini

(Woodhead Publishing series in electronic and optical materials)

Woodhead , , c2014

  • :hbk.

Available at  / 2 libraries

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Note

Includes bibliographical references and index

Description and Table of Contents

Description

High Performance Silicon Imaging covers the fundamentals of silicon image sensors, with a focus on existing performance issues and potential solutions. The book considers several applications for the technology as well. Silicon imaging is a fast growing area of the semiconductor industry. Its use in cell phone cameras is already well established, and emerging applications include web, security, automotive, and digital cinema cameras. Part one begins with a review of the fundamental principles of photosensing and the operational principles of silicon image sensors. It then focuses in on charged coupled device (CCD) image sensors and complementary metal oxide semiconductor (CMOS) image sensors. The performance issues considered include image quality, sensitivity, data transfer rate, system level integration, rate of power consumption, and the potential for 3D imaging. Part two then discusses how CMOS technology can be used in a range of areas, including in mobile devices, image sensors for automotive applications, sensors for several forms of scientific imaging, and sensors for medical applications. High Performance Silicon Imaging is an excellent resource for both academics and engineers working in the optics, photonics, semiconductor, and electronics industries.

Table of Contents

Contributor contact details Woodhead Publishing Series in Electronic and Optical Materials Part I: Fundamentals 1. Fundamental principles of photosensing Abstract: 1.1 Introduction 1.2 The human vision system 1.3 Photometry and radiometry 1.4 History of photosensing 1.5 Early developments in photodetector technology 1.6 References 2. Operational principles of silicon image sensors Abstract: 2.1 Introduction 2.2 Silicon phototransduction 2.3 Principles of charged coupled device (CCD) and complementary metal-oxide-semiconductor (CMOS) photosensing technologies 2.4 Metal-oxide-semiconductor-capacitor (MOS-C) structure-based photodetectors 2.5 p-n junction-based photodetectors 2.6 Noise considerations in pixel structures 2.7 High-performance pixel structures 2.8 Miniaturization and other development strategies followed in image sensor technologies 2.9 Hybrid and 3D detector technologies 2.10 Conclusion 2.11 References 3. Charge coupled device (CCD) image sensors Abstract: 3.1 Introduction 3.2 Charge coupled device (CCD) design, architecture and operation 3.3 Illumination modes 3.4 Imaging parameters and their characterization 3.5 Conclusion and future trends 3.6 References 4. Backside illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) image sensors Abstract: 4.1 Introduction 4.2 Challenges facing a scaled-down frontside illuminated (FSI) sensor 4.3 Basics of backside illuminated (BSI) sensor process integration 4.4 Interface solutions to BSI sensors 4.5 Conclusion 4.6 References 5. Circuits for high performance complementary metal-oxide-semiconductor (CMOS) image sensors Abstract: 5.1 Introduction 5.2 High resolution image sensors 5.3 Low noise complementary metal-oxide-semiconductor (CMOS) image sensors 5.4 High speed image sensors 5.5 Low power image sensors 5.6 Wide dynamic range sensors 5.7 Other high performance designs 5.8 Conclusion 5.9 References 6. Smart cameras on a chip: using complementary metal-oxide-semiconductor (CMOS) image sensors to create smart vision chips Abstract: 6.1 Introduction 6.2 The concept of a smart camera on a chip 6.3 The development of vision chip technology 6.4 From special-purpose chips to smart computational chips 6.5 From video rate applications to high-speed image processing chips 6.6 Future trends 6.7 Conclusion 6.8 References Part II: Applications 7. Complementary metal-oxide-semiconductor (CMOS) image sensors for mobile devices Abstract: 7.1 Introduction 7.2 Core image/video capture technology requirements and advances in mobile applications 7.3 Emerging complementary metal-oxide-semiconductor (CMOS) 'sensor-embedded' technologies 7.4 Mobile image sensor architecture and product considerations 7.5 Future trends 7.6 Conclusion 7.7 References 8. Complementary metal-oxide-semiconductor (CMOS) image sensors for automotive applications Abstract: 8.1 Automotive applications 8.2 Vision systems 8.3 Sensing systems 8.4 Requirements for automotive image sensors 8.5 Future trends 8.6 References 9. Complementary metal-oxide-semiconductor (CMOS) image sensors for use in space Abstract: 9.1 Introduction 9.2 General requirements for use of complementary metal-oxide-semiconductor (CMOS) sensors in space 9.3 Comparison of CMOS sensors and charge coupled devices (CCDs) for space applications 9.4 CMOS sensors for space applications 9.5 References 10. Complementary metal-oxide-semiconductor (CMOS) sensors for high-performance scientific imaging Abstract: 10.1 Introduction 10.2 Detection in silicon 10.3 Complementary metal-oxide-semiconductor (CMOS) sensors for the detection of charged particles 10.4 CMOS sensors for X-ray detection 10.5 Future trends 10.6 Sources of further information and advice 10.7 References 11. Complementary metal-oxide-semiconductor (CMOS) sensors for fluorescence lifetime imaging (FLIM) Abstract: 11.1 Introduction 11.2 Fluorescence lifetime imaging (FLIM) 11.3 Complementary metal-oxide-semiconductor (CMOS) detectors and pixels 11.4 FLIM system-on-chip 11.5 Future trends 11.6 Sources of further information and advice 11.7 References 12. Complementary metal-oxide-semiconductor (CMOS) X-ray sensors Abstract: 12.1 Introduction 12.2 Intra-oral and extra-oral dental X-ray imaging 12.3 Medical radiography, fluoroscopy and mammography 12.4 CMOS image sensor (CIS)-based flat panel display (FPD) technology 12.5 Pixel design considerations for CMOS-based FPDs 12.6 Key parameters for X-ray sensors 12.7 X-ray sensors: types and requirements 12.8 Direct X-ray sensors 12.9 Conclusion and future trends 12.10 References 13. Complementary metal-oxide-semiconductor (CMOS) and charge coupled device (CCD) image sensors in high-definition TV imaging Abstract: 13.1 Introduction 13.2 Broadcast camera performance 13.3 Modulation transfer function (MTF), aliasing and resolution 13.4 Aliasing and optical low pass filtering 13.5 Opto-electrical matching and other parameters 13.6 Standards for describing the performance of broadcast cameras 13.7 Charge coupled device (CCD) and complementary metal-oxide-semiconductor (CMOS) image sensors used in broadcast cameras 13.8 Signal-to-noise ratio (SNR) 13.9 Bit size, pixel count and other issues 13.10 Three-dimensional and ultra high-defi nition (UHD) television 13.11 Conclusion 13.12 Sources of further information and advice 13.13 References 14. High-performance silicon imagers and their applications in astrophysics, medicine and other fields Abstract: 14.1 Introduction 14.2 Solid-state imaging detectors: principles of operation 14.3 Scientific imaging detectors 14.4 Readout structures 14.5 Photon counting detectors 14.7 Planetary and astronomy applications 14.8 Commercial applications of high-performance imaging detectors 14.9 Brief note on biological and medical applications 14.10 References and further reading Index

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