Materials
Author(s)
Bibliographic Information
Materials
(Electronic materials and devices series / series editors, Jean-Pierre Leburton and Yongbing Xu, . Handbook of zinc oxide and related materials ; v. 1)
CRC Press, c2013
Available at 2 libraries
  Aomori
  Iwate
  Miyagi
  Akita
  Yamagata
  Fukushima
  Ibaraki
  Tochigi
  Gunma
  Saitama
  Chiba
  Tokyo
  Kanagawa
  Niigata
  Toyama
  Ishikawa
  Fukui
  Yamanashi
  Nagano
  Gifu
  Shizuoka
  Aichi
  Mie
  Shiga
  Kyoto
  Osaka
  Hyogo
  Nara
  Wakayama
  Tottori
  Shimane
  Okayama
  Hiroshima
  Yamaguchi
  Tokushima
  Kagawa
  Ehime
  Kochi
  Fukuoka
  Saga
  Nagasaki
  Kumamoto
  Oita
  Miyazaki
  Kagoshima
  Okinawa
  Korea
  China
  Thailand
  United Kingdom
  Germany
  Switzerland
  France
  Belgium
  Netherlands
  Sweden
  Norway
  United States of America
Note
Includes bibliographical references and index
Description and Table of Contents
Description
Through their application in energy-efficient and environmentally friendly devices, zinc oxide (ZnO) and related classes of wide gap semiconductors, including GaN and SiC, are revolutionizing numerous areas, from lighting, energy conversion, photovoltaics, and communications to biotechnology, imaging, and medicine. With an emphasis on engineering and materials science, Handbook of Zinc Oxide and Related Materials provides a comprehensive, up-to-date review of various technological aspects of ZnO.
Volume One presents fundamental knowledge on ZnO-based materials and technologies. It covers the basic physics and chemistry of ZnO and related compound semiconductors and alloys. The first part of this volume discusses preparation methods, modeling, and doping strategies. It then describes epitaxial methods used to create thin films and functional materials. The book concludes with a review of alloys and related materials, exploring their preparation, bulk properties, and applications.
Covering key properties and important technologies of ZnO-based devices and nano-engineering, the handbook highlights the potential of this wide gap semiconductor. It also illustrates the remaining challenging issues in nanomaterial preparation and device fabrication for R&D in the twenty-first century.
Table of Contents
Part I ZnO Basic: Brief Historical Review of Research/Development and Basic/Interdisciplinary Characterization on ZnO. Pressurized Melt Growth of ZnO Single Crystals. New Design and Development of MOCVD: Process and Modeling for ZnO-Based Materials. p-Type ZnO: Current Status and Perspective. Part II ZnO Epitaxy: ZnO Nanostructures and Thin Films Grown in Aqueous Solution: Growth, Defects and Doping. Second Harmonic Generation and Related Studies on ZnO Films. Optical Properties and Carrier Dynamics of ZnO and ZnO/ZnMgO Multiple Quantum Well Structures. p-Type ZnO-N Films: Preparation and Characterization by Synchrotron Radiation. Optical Properties of MgZnO/ZnO Heterostructures Grown on Sapphire Substrates by Plasma-Assisted Molecular Beam Epitaxy. Part III ZnO Alloys: The (Mg,Zn)O Alloys. Growth and Characterizations of Zn(Mg,Cd)O Alloys and Heterostructures Using Remote-Plasma-Enhanced MOCVD. Structural and Optical Properties of Zn1-x CuxO Thin Films. Structural and Magnetic Properties of ZnO Alloy Films with Cu, Cr and Fe by RF Magnetron Sputtering Technique. Index.
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