Fundamentals of bias temperature instability in MOS transistors : characterization methods, process and materials impact, DC and AC modeling

Author(s)

• Mahapatra, Souvik

Bibliographic Information

Fundamentals of bias temperature instability in MOS transistors : characterization methods, process and materials impact, DC and AC modeling

Souvik Mahapatra, editor

（Advanced microelectronics, 52）

Springer, c2016

Note

Includes bibliographical references and index

Details

• NCID: BB22028842
• ISBN:
  • 9788132225072
• Country Code: ii
• Title Language Code: eng
• Text Language Code: eng
• Place of Publication: New Delhi
• Pages/Volumes: xvi, 269 p.
• Size: 25 cm
• Classification:
  • LCC : TK7871.95
  • DC23 : 621.3815284
• Subject Headings:
  • LCSH : Metal oxide semiconductor field-effect transistors
  • LCSH : Metal oxide semiconductor field-effect transistors -- Mathematical models
• Parent Bibliography ID:
  • BA41247416