Ferroelectric-gate field effect transistor memories : device physics and applications
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書誌事項
Ferroelectric-gate field effect transistor memories : device physics and applications
（Topics in applied physics, 131）
Springer, c2016
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注記
Includes bibliographical references
内容説明・目次
内容説明
This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact.
Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time.
This book aims to provide readers with the development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass or plastic substrates as well as in conventional Si electronics.
The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.
目次
Preface
I. Operation Principle of One-Transistor Type Ferroelectric-gate Field Effect Transistors
II. Practical Characteristics of Inorganic Ferroelectric-gate FETs
Si-Based Ferroelectric-gate Field Effect Transistors
1) Pt/SrBi2Ta2O9(SBT)/(Hf,SiO)2/Si gate structure Ferroelectric FETs
2) Pt/(SBT,BLT)/HfO2/Si gate structure Ferroelectric FETs
Thin film-Based Ferroelectric-gate Field Effect Transistors
3) ITO/PZT/LaNiO3(LNO) gate structure Ferroelectric FETs
4) ZnO/Pb(Zr,Ti)O3 gate structure Ferroelectric FETs
5) Pt/PZT/ZnO gate structure Ferroelectric FETs
III. Practical Characteristics of Organic Ferroelectric-gate FETs
Si-Based Ferroelectric-gate Field Effect Transistors
1) Polyvinylidene fluoride (PVDF)/Si structure Ferroelectric-gate FETs
2) Poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE))/Si structure Ferroelectric-gate FETs
Thin film-Based Ferroelectric-gate Field Effect Transistors
3) P(VDF-TrFE)/Pentacene structure Ferroelectric-gate FETs
4) P(VDF-TrFE)/oxide thin film structure Ferroelectric-gate FETs
Ferroelectric-gate Field Effect Transistors with flexible substrates
5) P(VDF-TrFE)-based Ferroelectric-gate FETs fabricated on plastic substrates
6) P(VDF-TrFE)-based Ferroelectric-gate FETs fabricated on paper substrates
IV. Applications and Future Prospects
1) Novel Applications to NAND-type Memory Circuits
2) Novel Applications to Non-memory Devices
3) Features of One-Transistor Type Ferroelectric-gate Field Effect Transistors
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