Physics of DX centers in GaAs alloys
Author(s)
Bibliographic Information
Physics of DX centers in GaAs alloys
（Diffusion and defect data : solid state data, Pt. B. Solid state phenomena ; v. 10）
Sci-Tech Publications, c1990
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- Other Title
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Solid state phenomena
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Note
"Focus -- physics of DX centers in GaAs alloys"
"SSP"
Description and Table of Contents
Description
The DX center is a defect present in Gallium Arsenide and related alloys when these materials are doped with n-type impurities.
Table of Contents
Elaboration and n-Type Doping of GaAlAs Epitaxial Layers
Band Structure of the GaAs/AlAs Solid Solutions
Optically-Detected Magnetic Resonance of Si-Doped GaAlAs
Photo-Hall Characterization in GaAlAs
Thermal Emission Processes from DX Centers
Carrier Capture Processes at DX Centers
Studies of the DX Center Using Hydrostatic Pressure
Radiative Recombination in GaxAl1-xAs
Moessbauer Spectroscopy Studies of the DX Center
Electron Paramagnetic Resonance Studies of the DX Center in GaAlAs
The A1-T2 Transition of Substitutional Deep Impurities
Review of DX Center Models
Negative-U Aspects of DX-Center in Alx-Ga1-xAs
A Critical View of DX Models
DX Centers in Superlattices
Passivation of the DX Center in AlGaAs by Hydrogen Plasma Exposure
Local Structure of DX-Like Centers from Extended X-Ray Absorption Fine Structure
by "Nielsen BookData"