Variation-aware advanced CMOS devices and SRAM

Author(s)

• Shin, Changhwan

Bibliographic Information

Variation-aware advanced CMOS devices and SRAM

Changhwan Shin

（Advanced microelectronics, 56）

Springer Science+Business Media, c2016

Note

Includes bibliographical references

Details

• NCID: BB23188436
• ISBN:
  • 9789401775953
• LCCN: 2016940803
• Country Code: ne
• Title Language Code: eng
• Text Language Code: eng
• Place of Publication: Dordrecht
• Pages/Volumes: vii, 140 p.
• Size: 25 cm
• Classification:
  • DC23 : 621.384134
• Subject Headings:
  • LCSH : Metal oxide semiconductors, Complementary -- Design
• Parent Bibliography ID:
  • BA41247416