Shallow impurities in semiconductors : proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities" International Conference Center Kobe, Japan 5 to 8 August 1992

著者

書誌事項

Shallow impurities in semiconductors : proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities" International Conference Center Kobe, Japan 5 to 8 August 1992

editor Tsunemasa TAGUCHI

（Materials science forum, v. 117 & 118）

Trans Tech Publications, c1993

• : [pbk.]

タイトル別名

ICSIS-V

注記

Guest Editor: Tsunemasa Taguchi

内容説明・目次

内容説明

The volume presents the proceedings of the 5th International Conference on Shallow Impurities in Semiconductors, held in Kobe, Japan, August 1992.

目次

D- Centers in High Magnetic Fields and Quantum Wells Electronic States of Thermal Donors in Semiconductors Impurity Control in Silicon Crystals for G-Bit Scale Integration Optical Spectroscopy of Shallow Impurity States in Semiconductor Quantum Wells Extremely Heavy Doping of Carbon in GaAs and InGaAs Carbon and Silicon Impurity Centers in GaAs Non-Equilibrium Point Defects and Diffusion in GaAs and Related Compounds Self-Compensation in P, As, and N Doped ZnSe Vacancies in Semiconductors Characterized by Slow Positron and Their Effect on Electrical Properties Effect of External Pressure and Internal Stress on Imyurity Diffusion in Silicon Impurity Vibrations of Carbon-Oxygen Complexes in Crystalline Silicon Strong Electron Correlation in Si-OV and Si-V - An Ab Initio Cluster Study - Spherical Model of Shallow Acceptor Resonant P1/2 States in Cubic Semiconductors Shallow-Deep Instability of a Hydrogenic Impurity in Quantum Wells Alloy Broadening of the Acceptor-Related Near-Gap Luminescence in Semiconductor Alloys Isotopic Dependence of Near-Band-Gap Luminescence from Germanium Neutron Transmutation Doping of Isotopically Controlled Ge Zeeman and Landau Spectroscopy of Group III Acceptors in Germanium Zeeman and Piezo-Zeeman Spectroscopy of Zinc and Copper Acceptors in Germanium Hydrogen-Induced Isotope Shift of Dipole Transitions of Shallow Donors in Silicon The Structure of a Metastable Luminescent Defect in Sulphur-Doped Silicon Iron-, Manganese- and Chromium-Indium Pairs in Silicon Electrical Characteristics of B Doped Ge Film Epitaxially Grown on Si Using Ultraclean Chemical Vapor Deposition Self-Modulating Incorporation of Sb in Si/SiGe Superlattices during Molecular Beam Epitaxial Growth Strong Electron-Phonon Interaction of a Hydrogen-Carbon Complex and the Motion of Isolated Hydrogen in Si Piezo-Magneto-Resistivity of Si-B in the Hopping Regime Photoluminescence Measurements of a Beryllium-Related Deep Center in Silicon Accurate Evaluation Techniques of the Interstitial Oxygen Concentrations in the Oxygen Precipitated and the Low-Resistivity CZ-Si Crystals Measurement of Interstitial Oxygen Striations in Silicon Single Crystals Using the Micro-FTIR Method The Dynamics of the Non-Radiative Triplet State of the (V-O)0 Defect in Silicon: Evidence for a Radical Pair Mechanism Carbon-Oxygen Complexes and Oxygen Precipitation in Silicon Crystals Observed by Low-Temperature Infrared Absorption Shifts of the Infrared Absorption Peaks of Oxygen in Silicon Caused by Germanium-Doping Observation of Five Additional Thermal Donors and Kinetics of Thermal Donor Formation and Annihilation at Temperatures above 500 DegreesC in Czochralski-Grown Si Ultrashallow Hydrogen-Like Thermal Donors in Silicon Crystals Formation of Oxygen Clusters in Quenched Cz- and MCz-Si Crystals Simulation of Oxygen Precipitation and Denuded Zone Formation during Thermal Anneals Characterization of Excimer Laser Annealing of Arsenic Implanted Silicon Heavily Arsenic Doping into Si by ArF Excimer Laser Irradiation Using Tertiarybutylarsine (tBAs) Effective-Mass-Like Excited Pseudo-Donor States of a Complex Metastable Defect in Silicon Zeeman Study of 735meV Photoluminescence Band in Iron-Doped Silicon Thermal Process Dependence of Chromium Donor/Acceptor in Silicon Co-Acceptor Complexes in Si Defect Observation in Silicon Surface Layers by Surface Wave Resonance in RHEED Differential Hall-Effect Spectroscopy of Rare-Earth Impurities (Ce, Er) in Silicon Dispersion in Bound Exciton Binding Energy via Coupling to Interface Localization Potentials in GaAs/AIGaAs Quantum Wells Impurities and Point Defects in GaAs and AlAs Grown by Atomic Layer Epitaxy Partial Ferromagnetic Order in p-Type (In, Mn) as Diluted Magnetic III-V Semiconductors Yb Intra-4f-Shell Luminescence in Yb- and Zn-Doped InP Infrared Absorption Lines in Hydrogen-Plasma Treated Se-Doped GaAs Monoenergetic Positron Beam Study of Heavily Si-Doped GaAs Grown by MOCVD Using Tertiarybutylarsine Anti-Stokes Photoluminescence Related to the Deep Donor States in Si Double -Doped AlxGa1-xAs Shallow Donor Bound State in an AlAs/GaAs Quantum Well with - X Mixing Optical Studies of Excitons in Be-Doped GaAs/AlGaAs Symmetric Coupled Double Quantum Wells Hydrogen Passivation of Shallow Impurities in GaAs/AlGaAs Quantum Wells Multi-Level Dynamics between Below-Gap States in Heavily Doped Quantum Wells by Time-Resolved and Selectively-Excited Photoluminescence Deep Electron Trap Studies of GaAlAs/GaAs Single and Multiple Quantum Well Lasers Fabricated on Si Substrate by MOCVD Optical Absorption Lines in Heat-Treated GaAs Te-Related Donor States in AlxGa1-xAs Shallow Donor States in InP - Electron-Spin-Resonance Induced Overhauser Shift - Donor Concentration Dependence of GaP Luminescence Various Configurations of Silicon-Related Defects in GaAs Si Doping of GaAs Grown by Molecular Beam Epitaxy on Different Substrate Orientations The Effect of Arsenic Vapor Pressure on Site Distribution of Silicon in Gallium Arsenide Grown by the Gradient Freeze Method Fermi Level Effect and Vacancy Contribution to the Outdiffusion of Si in GaAs Carbon in LEC Grown GaAs Crystals The Study of Defects Induced by the Implantation of O Ions into GaAs by a Slow Positron Beam Impurity Diffusion into GaAs through the SiO2 Protective Layers Electron Beam Doping of Si and Zn Impurities into GaAs Effect of Hydrogen Passivation on Lightly n-Doped GaAs Free-Carrier Saturation in III-V Compound Semiconductors The Sn- and Si-DK Centre Properties in Double Doped (Al,Ga)As Multiplicity and Lattice Relaxation of DX Center in AlGaAs: Si Studied by Electron Emission Spectra under Pressure Persistent Photoconductivity and Electric-Field Quenching Related with DX Centers in AlGaAs/GaAs Heterostructure Photo-Induced Simultaneous Transformations of Shallow Donors and EL2 States in Semi-Insulating GaAs Photoluminescence Study of Yb-Doped InP under Low Temperature and Pressure Identification of Residual Donors in CdTe Grown by the Bridgman Method Far-Infrared Magneto-Absorption of Donors in the Epitaxial ZnSe Layers on GaAs Origin of Carrier Reduction by Annealing in n-Type ZnSe Photoluminescence Characterization of Defecfs in CuGaS2 Crystals Hall Effect and Infrared Absorption Measurements on Nitrogen Donors in 4H-SiC Characterization of Defects in As-Grown and Electron-Irradiated 3C-SiC Epilayers by Using Slow Positrons Localized-Pair Recombination Nature of Visible Luminescence from Anodized Porous-Si Visible Photoluminescence of Porous Silicon Photoluminescence due to Zn-O Complexes in Silicon High-Resolution EPR Spectroscopy of the Si-NL 10 Thermal Donor Morphology of Oxide Precipitates in Czochralski Silicon Crystals Site Change of Li Atoms in ZnSe by Photoirradiation Characterization of Impurities in Si(C2H5O)4 for Efficient SiO2 Production in ULSI Technology

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詳細情報

• NII書誌ID(NCID): BB23622667
• ISBN:
  • 0878496548
• 出版国コード: sz
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: Aedermannsdorf, Switzerland
• ページ数/冊数: 528 p.
• 大きさ: 25 cm
• 親書誌ID:
  • BA00294222