Atomic layer deposition for semiconductors

著者

• Hwang, Cheol Seong

書誌事項

Atomic layer deposition for semiconductors

Cheol Seong Hwang, editor

Springer, 2014

• : softcover

注記

"Softcover reprint of the hardcover 1st edition 2014"--T.p. verso

Includes bibliographical references and index

内容説明・目次

内容説明

Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.

目次

• I.Introduction Chapter 1. Introduction
• Cheol Seong Hwang and Cha Young Yoo (Seoul National University and Samsung) II.Fundamentals Chapter 2 . ALD Precursors and Reaction mechanism
• Roy Gordon (Harvard) Chapter 3 . ALD simulations
• Simon Elliott (Tyndall) III.ALD for memory devices Chapter 4 . ALD for mass-production memories (DRAM and Flash)
• Cheol Seong Hwang, Seong Keun Kim, and Sang Woon Lee (SNU) III-2. ALD for emerging memories Chapter 5 . PcRAM
• Mikko Ritala and Simone Raoux (Helsinki and T. J. Watson IBM) Chapter 6 .FeRAM
• Susanne Hoffmann and Takayuki Watanabe (Juelich and Canon) IV.ALD for logic devices Chapter 7.Front end of the line process
• Jeong Hwan Han, Moonju Cho, Annelies Delabie, Tae Joo Park, and Cheol Seong Hwang Chapter 8. Back end of the line
• Hyung Joon Kim, Han-Bo-Ram Lee, and Soohyun Kim (Yonsei and Youngnam University) V.ALD machines Chapter 9. Equipment for Atomic Layer Deposition for Semiconductor Manufacturing
• Schubert Chu

「Nielsen BookData」 より

詳細情報

• NII書誌ID(NCID): BB24710500
• ISBN:
  • 9781489979438
• 出版国コード: us
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: New York
• ページ数/冊数: x, 263 p.
• 大きさ: 24 cm
• 分類:
  • DC23 : 621.3815/2
• 件名:
  • LCSH : Semiconductors -- Surfaces
  • LCSH : Atomic layer deposition
  • LCSH : Semiconductors -- Surfaces. fast