Fundamentals of semiconductor devices

著者

書誌事項

Fundamentals of semiconductor devices

Betty Lise Anderson, Richard L. Anderson

McGraw-Hill Education, c2018

2nd ed

  • : pbk

大学図書館所蔵 件 / 11

この図書・雑誌をさがす

注記

Includes index

内容説明・目次

内容説明

Fundamentals of Semiconductor Devices provides a realistic and practical treatment of modern semiconductor devices. A solid understanding of the physical processes responsible for the electronic properties of semiconductor materials and devices is emphasized. With this emphasis, the reader will appreciate the underlying physics behind the equations derived and their range of applicability. The author's clear writing style, comprehensive coverage of the core material, and attention to current topics are key strengths of this book.

目次

Part 1 - Materials 1) Electron Energy and States in Semiconductors 2) Homogeneous Semiconductors 3) Current Flow in Homogeneous Semiconductors 4) Nonhomogeneous Semiconductors Supplement to Part 1 Supplement 1A Supplement 1B Part 2 - Diodes 5) Prototype pn Homojunctions 6) Additional Considerations for Diodes Supplement to Part 2 Part 3 - Field-Effect Transistors 7) The MOSFET 8) Additional Considerations for FETs Supplement to Part 3 Part 4 - Bipolar Junction Transistors 9) Bipolar Junction Devices: Statics 10) Time-Dependent Analysis of BJTs Supplement to Part 4 Part 5 - Optoelectronic Devices 11) Optoelectronic Devices Appendix A - Constants Appendix B - List of Symbols Appendix C - Fabrication Appendix D - Density-of-States Function, Density-of-States Effective Mass, Conductivity Effective Mass Appendix E - Some Useful Integrals Appendix F - Useful Equations Appendix G - List of Suggested Readings

「Nielsen BookData」 より

詳細情報

  • NII書誌ID(NCID)
    BB26680309
  • ISBN
    • 9780073529561
    • 9781259251351
  • 出版国コード
    us
  • タイトル言語コード
    eng
  • 本文言語コード
    eng
  • 出版地
    New York
  • ページ数/冊数
    xiv, 816 p.
  • 大きさ
    24 cm
  • 分類
  • 件名
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