FinFET modeling for IC simulation and design : using the BSIM-CMG standard

著者

    • Chauhan, Yogesh Singh

書誌事項

FinFET modeling for IC simulation and design : using the BSIM-CMG standard

Yogesh Singh Chauhan ... [et al.]

Academic Press, an imprint of Elsevier, c2015

  • hardcover

大学図書館所蔵 件 / 全2件

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注記

Includes bibliographical references and index

内容説明・目次

内容説明

This book is the first to explain FinFET modeling for IC simulation and the industry standard - BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture, as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, providing a step-by-step approach for the efficient extraction of model parameters. With this book you will learn: Why you should use FinFET The physics and operation of FinFET Details of the FinFET standard model (BSIM-CMG) Parameter extraction in BSIM-CMG FinFET circuit design and simulation

目次

1. FinFET- from Device Concept to Standard Compact Model2. Analog/RF behavior of FinFET3. Core Model for FinFETs4. Channel Current and Real Device Effects5. Leakage Current Models6. Charge, Capacitance and Nonquasi-Static Effect7. Parasitic Resistances and Capacitances8. Noise9. Junction Diode Current and Capacitance10. Benchmark Tests for Compact Models11. BSIM-CMG Model Parameter Extraction12. Temperature Effects

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